IDH04G65C6XKSA1 vs IDD04SG60CXTMA2 对比
详细并排对比 IDH04G65C6XKSA1 出自 Infineon 和 IDD04SG60CXTMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IDH04G65C6XKSA1 | IDD04SG60CXTMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Diodes | Diodes |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.74 |
| Diode Type | Silicon Carbide (SiC) Schottky | — |
| Series | CoolSiC G6 | — |
| Repetitive Peak Reverse Voltage (VRRM) | 650 V | 600 V |
| Average Forward Current (IF(AV)) | 4 A | — |
| Non-Repetitive Peak Surge Current (IFSM) | 12 A (per distributor listing) | — |
| Forward Voltage (VF) at IF | 1.25 V (typical at rated IF) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (SiC Schottky - no reverse recovery) | — |
| Total Capacitive Charge (Qc) | [DATA_NEEDED: Qc value] | 4.5 nC |
| Junction Capacitance (Cj) | 205 pF @ 1 V, 1 MHz (per onepcba listing) | — |
| 工作结温范围 | -55C to +175C | -55 C to +175 C |
| Storage Temperature Range | [DATA_NEEDED: Tstg min/max] | -55 C to +150 C |
| Package / Supplier Device Package | PG-TO220-2 (through-hole) | — |
| 安装类型 | Through Hole | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| Configuration | Single Diode | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolSiC G3 thinQ Schottky Diode |
| Device Type | — | Silicon Carbide (SiC) Schottky Diode, Single |
| Continuous Forward Current (IF), TC=135 C | — | 4 A |
| Non-Repetitive Forward Surge Current (IFSM), tp=10ms | — | [DATA_NEEDED: IFSM surge rating] |
| Forward Voltage (VF) typ. at IF=4A, Tj=25 C | — | 1.5 V |
| Total Capacitance (Ctot) at VR=400V | — | [DATA_NEEDED: Ctot at 400 V] |
| Reverse Current (IR) at VR=600V, Tj=25 C | — | [DATA_NEEDED: IR max at 600 V] |
| 封装 | — | PG-TO252-3 (DPAK), 3-pin surface mount with tab |
| Lead-Free Finish | — | Yes (Sn plating) |
| MSL (Moisture Sensitivity Level) | — | MSL 3 (per JEDEC J-STD-020) |
| 无卤 | — | Yes |