IPP120N04S4-02 - 40V, 120A OptiMOS-T2 N-Channel MOSFET | Infineon
料号： IPP120N04S4-02 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $3.62 | $3.62 |
| 10 | $3.05 | $30.50 |
| 100 | $2.41 | $241.00 |
| 500 | $1.96 | $980.00 |
| 1,000 | $1.72 | $1,720.00 |
IPP120N04S4-02 概述
A power MOSFET is a voltage-controlled three-terminal semiconductor switch used in switching power conversion, motor drive, and load management. N-channel enhancement-mode MOSFETs conduct when a positive V<sub>GS</sub> is applied (relative to source); within the broader taxonomy they sit under: MOSFET -> power transistor -> discrete semiconductor. Compared with P-channel devices of the same die size, N-channel MOSFETs typically deliver lower R<sub>DS(on)</sub> per unit silicon, which is why they dominate high-current switching applications. The 40 V OptiMOS-T2 family specifically targets 12 V and 24 V automotive bus systems where high peak current capability and low conduction loss translate directly into smaller heatsinks and longer cable runs.
Key differentiating features include AEC qualification, MSL1 robustness up to 260 degC peak reflow, 175 degC operating junction temperature, 100% avalanche-tested, and RoHS-compliant (Green Product) lead-free plating. The part also carries the world's lowest R<sub>DS(on)</sub> at 40 V per Infineon's marketing claim - a meaningful figure for designers who need minimum I<sup>2</sup>R losses in continuous conduction. The TO-220-3 package is the industry workhorse for through-hole power stages because it accepts a clip-on or bolt-on heatsink, accepts wave and hand soldering, and exposes the metal tab for direct thermal coupling to a chassis or cold plate.
Typical applications include 12 V / 24 V automotive motor control (EPS, water pumps, oil pumps, fans), DC-DC buck and synchronous-rectifier stages, high-current solenoid and relay drivers, battery protection and load-disconnect switches, and forklift / e-bike power stages. The 480 A pulsed rating also makes it attractive for inrush-current handling and short-duration peak loads where thermal mass averages the dissipation below the 158 W continuous limit. Designers migrating from older 30 V or 40 V planar MOSFETs typically see a 25-40% conduction-loss reduction at the same footprint.
When designing with IPP120N04S4-02, keep the gate-drive loop tight (short gate-trace + 10 Ohm gate resistor) to avoid ringing, and provide a TVS or gate-source Zener (typically 12 V) to protect against dv/dt-induced turn-on in half-bridge configurations. At 120 A continuous the part will need either a substantial heatsink or PCB copper pour sized for the application's ambient temperature; the TO-220's tab must be properly insulated with a mica or silicone pad if it sits on a grounded chassis.
This page synthesizes distributor pricing, parametric proximity to cross-brand equivalents, and practical PCB layout guidance not found on a single OEM product page. Cross-reference values, design notes, and FAQ answers are assembled from the Infineon datasheet, DigiKey, Mouser, and Octopart listings current as of 2026-10-08.
直接替换替代料： IPP120N04S4-02 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
IPI120N04S4-02
✅ 直接替换📋 参考替代料（不在目录中）
IPP120N04S4-03
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
IRF3205STRLPBF
✅ 直接替换✓ 有现货
$1.02 / 个
查看数据手册 →NVMFS015N04CT1G
✅ 直接替换📋 参考替代料（不在目录中）
NTB015N04G
✅ 直接替换📋 参考替代料（不在目录中）
SiRA60DP
✅ 直接替换📋 参考替代料（不在目录中）
IPP120N04S4-02 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS-T2 |
| FET Type | N-Channel MOSFET, Enhancement Mode |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 degC) | 120 A |
| Pulsed Drain Current (I<sub>DM</sub>) | 480 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 1.9 mOhm (DigiKey listing); 1.8 mOhm (Infineon product page) |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 degC) | 158 W |
| 工作结温 | -55 degC to +175 degC |
| Package / Mounting Type | PG-TO220-3-1 (TO-220-3, through-hole) |
| AEC Qualification | AEC qualified (automotive) |
| MSL (Moisture Sensitivity Level) | MSL1, 260 degC peak reflow |
| Avalanche Rating | 100% avalanche tested |
| RoHS / Lead-Free | RoHS compliant (Green Product), lead-free |
| 引脚数量 | 3 (Gate, Drain, Source) |
IPP120N04S4-02 引脚配置
| 引脚 1 | Gate — Gate drive input; apply 10 V V_GS for full enhancement (typ. V_GS(th) 1-3 V) |
| 引脚 2 | Drain — Drain connection; metal tab on the back of the package is also internally tied to Drain |
| 引脚 3 | Source — Source connection; ground reference for the gate drive and load return |
安全工作区 (DC, T_C = 25 degC)
典型应用
IPP120N04S4-02 适用于 6 应用s: 12V Automotive Motor Control (EPS / Pumps / Fans), 24V Truck / Industrial DC-DC Buck Stage, Battery Protection and Load-Disconnect Switch, High-Current Solenoid and Relay Driver, Forklift / E-Bike Traction Inverter (Low-Side), Hot-Swap / Inrush Current Limiter.
12V Automotive Motor Control (EPS / Pumps / Fans)
The IPP120N04S4-02 is purpose-built for 12 V automotive motor control - electric power steering (EPS) racks, water pumps, oil pumps, and cooling fans all run on the 12 V bus and require continuous currents of 30-100 A. The part's 1.8-1.9 mOhm R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V keeps I<sup>2</sup>R conduction losses manageable without an oversized heatsink; the 480 A pulsed rating covers motor inrush and stall transients. AEC qualification and 175 degC junction rating confirm the device survives under-hood temperature swings, while the TO-220-3 package bolts directly to a chassis or bracket for thermal coupling. Designers typically run the MOSFET as a low-side switch with a dedicated gate-driver IC for fast turn-off, or use it in a half-bridge with the IPP120N04S4-02 on the low-side and a matching P-channel or higher-voltage N-channel on the high-side.
推荐
24V Truck / Industrial DC-DC Buck Stage
The IPP120N04S4-02 functions as the synchronous rectifier (low-side) switch in 24 V truck and industrial DC-DC buck converters stepping down to 5 V, 12 V, or 3.3 V rails. Its 1.8-1.9 mOhm R<sub>DS(on)</sub> keeps synchronous-rectifier losses below 5 W even at 60 A continuous load, and the 40 V V<sub>DSS</sub> rating handles the 24 V nominal plus transient bursts up to 36 V. The TO-220-3 package enables direct bolt-on heatsink mounting for chassis-grounded industrial enclosures where SMT is impractical. Compared with older planar MOSFETs the OptiMOS-T2 trench technology typically improves buck-converter efficiency by 2-3 percentage points at full load, reducing heatsink size and extending fan-less operation in sealed enclosures.
推荐
Battery Protection and Load-Disconnect Switch
The IPP120N04S4-02 is widely used as the main disconnect MOSFET in 12 V Li-ion battery management systems (BMS) and e-bike / e-scooter battery packs. Its 120 A continuous rating comfortably handles typical e-mobility peak loads, while the 480 A pulsed rating covers brief surges during motor acceleration. The low R<sub>DS(on)</sub> keeps voltage drop across the protection FET under 250 mV at full load, preserving battery run time. The TO-220-3 footprint is easy to hand-solder in low-volume battery-pack assembly, and the AEC-qualified process trail gives OEM tier-1 customers confidence in long-term reliability. Designers place it on the low-side return path with a dedicated charge/discharge FET driver for reverse-battery protection.
推荐
High-Current Solenoid and Relay Driver
Industrial solenoid valves, starter relays, and contactor coils can draw 50-200 A inrush for 10-100 ms - well within the IPP120N04S4-02's 480 A pulsed rating. The part is wired as a low-side switch with a flyback diode across the solenoid, and its 175 degC junction temperature handles the dissipation pulse without overheating. Compared with mechanical relays, the solid-state MOSFET version eliminates contact bounce, arcing, and mechanical wear - critical for high-cycle industrial machinery and automated test equipment. The TO-220-3 tab also serves as a convenient heatsink-mounting point when the solenoid is mounted on a metal bracket.
推荐
Forklift / E-Bike Traction Inverter (Low-Side)
Electric forklifts, e-bikes, and light-EV traction inverters in the 1-5 kW class use the IPP120N04S4-02 as a low-side switch in three-phase half-bridge modules. The 120 A continuous rating supports peak motor currents up to ~80 A at 24 V / 48 V bus, while the AEC-qualified process trail makes the part attractive for off-road and material-handling equipment that does not require full automotive certification. The TO-220-3 package allows easy paralleling for higher-current modules (two or three parts in parallel drop total R<sub>DS(on)</sub> by N), and the 175 degC rating handles the elevated thermal environment near the motor housing.
推荐
Hot-Swap / Inrush Current Limiter
When inserting a live PCB into a backplane or energizing a large capacitive load, the IPP120N04S4-02 serves as the inrush-limiting element. Wired in series with the load, the MOSFET is initially held off by the gate driver; the controller then ramps V<sub>GS</sub> up slowly (or pulses the gate with progressive duty cycle) so the output capacitance charges at a controlled rate, limiting the inrush to within the upstream fuse / breaker rating. The 480 A pulsed rating covers worst-case hot-plug transients, while the 1.8-1.9 mOhm R<sub>DS(on)</sub> keeps steady-state loss low after the ramp completes. This application is common in 24 V industrial PoE injectors, server backplanes, and telecom equipment.
推荐
推荐产品汇总
工程参考数据： IPP120N04S4-02 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IPI120N04S4-02 | IPP120N04S4-03 | IRF3205 | NVMFS015N04CT1G | NTB015N04G | SiRA60DP |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | onsemi | Vishay |
| Package | TO-220-3 (PG-TO220-3-1) | TO-220-3 (IPI variant) | TO-220-3 | TO-220-3 | TO-220-3 / DFN5x6 variant | TO-220-3 | TO-220-3 |
| Drain-Source Voltage (V_DSS) | 40 V | 40 V | 40 V | 55 V | 40 V | 40 V | 30 V |
| R_DS(on) max @ V_GS=10V | 1.9 mOhm (DigiKey) / 1.8 mOhm (Infineon) | 1.8-1.9 mOhm | ~3 mOhm | 8.0 mOhm | 1.5 mOhm | 1.5 mOhm | 2.0 mOhm |
| Approx. Unit Price (qty 1, USD) | $3.62 | ~$1.50 | ~$4.20 | ~$3.00 |
关键差异点
- World's lowest R<sub>DS(on)</sub> at 40 V per Infineon OptiMOS-T2 marketing （对比 IRF3205)
- AEC qualified with 175 degC operating junction temperature （对比 NTB015N04G (onsemi))
- Higher V_DSS rating of 40 V (vs SiRA60DP at 30 V) （对比 SiRA60DP (Vishay))
设计说明
Estimated: At continuous 120 A load with 1.9 mOhm R<sub>DS(on)</sub>, conduction loss is I<sup>2</sup>R = 120<sup>2</sup> x 0.0019 = 27.4 W. The TO-220-3 case-to-ambient thermal resistance is approximately 62 degC/W without a heatsink; with a typical clip-on heatsink (R<sub>thSA</sub> ~ 5 degC/W) the total R<sub>thJA</sub> drops to ~6 degC/W, giving a junction temperature rise of about 165 degC above ambient at full 120 A. Either substantial heatsinking or derating to 60-80 A continuous is required to stay within the 175 degC max junction rating. Always verify with the datasheet's thermal-impedance curves for your specific pulse profile.
Keep the gate-drive loop area minimal: place the gate-driver IC within 10-15 mm of the gate pin and use a 10-33 Ohm gate resistor to dampen ringing. Add a TVS or 12 V Zener between gate and source to prevent dv/dt-induced turn-on in half-bridge topologies, and keep the source-return trace wide and short to avoid source-inductance-induced V<sub>GS</sub> spikes. A 1 MOhm gate-source pull-down resistor ensures the MOSFET stays off when the driver is tri-stated during power-up.
Do not exceed V<sub>GS</sub>= +/-20 V absolute maximum, or the gate oxide will be damaged - typical 10 V drive is safe. In half-bridge configurations ensure adequate dead-time between the high-side and low-side gate signals to prevent shoot-through. The TO-220 metal tab is internally connected to the Drain; if the heatsink is grounded, use a mica or silicone insulating pad with thermal compound to avoid shorting. Finally, do not exceed the single-pulse avalanche energy (E<sub>AS</sub>) rating during unclamped inductive switching.
合规信息
AEC qualified per Infineon OptiMOS-T2 family datasheet. RoHS compliant (Green Product), lead-free plating, halogen-free. MSL1 rated for 260 degC peak reflow.
