Infineon

IPP120N04S4-02 - 40V, 120A OptiMOS-T2 N-Channel MOSFET | Infineon

MPN: IPP120N04S4-02 ✓ Active
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40 V Vdss 120 A Id PG-TO220-3-1 (TO-220-3, through-hole) Package
From $1.72 USD / Unit
MOQ: 1 |
Price updated: 2026-10-07
Volume Pricing
Qty Unit Price Extended
1 $3.62 $3.62
10 $3.05 $30.50
100 $2.41 $241.00
500 $1.96 $980.00
1,000 $1.72 $1,720.00
ℹ️ All prices are in USD

IPP120N04S4-02 Overview

The Infineon IPP120N04S4-02 is an automotive-grade N-channel OptiMOS-T2 power MOSFET rated for 40 V drain-to-source voltage and 120 A continuous drain current (Tc), housed in a TO-220-3 (PG-TO220-3-1) through-hole package. Its headline ratings are 1.8 mOhm R<sub>DS(on)</sub> (max, datasheet fig), 1.9 mOhm R<sub>DS(on)</sub> (max @ V<sub>GS</sub>=10 V per DigiKey listing), 480 A pulsed drain current (IDM), and 158 W maximum power dissipation (Tc). It is built on Infineon's OptiMOS-T2 trench technology, optimized for the lowest conduction loss and highest thermal efficiency at 40 V.

A power MOSFET is a voltage-controlled three-terminal semiconductor switch used in switching power conversion, motor drive, and load management. N-channel enhancement-mode MOSFETs conduct when a positive V<sub>GS</sub> is applied (relative to source); within the broader taxonomy they sit under: MOSFET -> power transistor -> discrete semiconductor. Compared with P-channel devices of the same die size, N-channel MOSFETs typically deliver lower R<sub>DS(on)</sub> per unit silicon, which is why they dominate high-current switching applications. The 40 V OptiMOS-T2 family specifically targets 12 V and 24 V automotive bus systems where high peak current capability and low conduction loss translate directly into smaller heatsinks and longer cable runs.

Key differentiating features include AEC qualification, MSL1 robustness up to 260 degC peak reflow, 175 degC operating junction temperature, 100% avalanche-tested, and RoHS-compliant (Green Product) lead-free plating. The part also carries the world's lowest R<sub>DS(on)</sub> at 40 V per Infineon's marketing claim - a meaningful figure for designers who need minimum I<sup>2</sup>R losses in continuous conduction. The TO-220-3 package is the industry workhorse for through-hole power stages because it accepts a clip-on or bolt-on heatsink, accepts wave and hand soldering, and exposes the metal tab for direct thermal coupling to a chassis or cold plate.

Typical applications include 12 V / 24 V automotive motor control (EPS, water pumps, oil pumps, fans), DC-DC buck and synchronous-rectifier stages, high-current solenoid and relay drivers, battery protection and load-disconnect switches, and forklift / e-bike power stages. The 480 A pulsed rating also makes it attractive for inrush-current handling and short-duration peak loads where thermal mass averages the dissipation below the 158 W continuous limit. Designers migrating from older 30 V or 40 V planar MOSFETs typically see a 25-40% conduction-loss reduction at the same footprint.

When designing with IPP120N04S4-02, keep the gate-drive loop tight (short gate-trace + 10 Ohm gate resistor) to avoid ringing, and provide a TVS or gate-source Zener (typically 12 V) to protect against dv/dt-induced turn-on in half-bridge configurations. At 120 A continuous the part will need either a substantial heatsink or PCB copper pour sized for the application's ambient temperature; the TO-220's tab must be properly insulated with a mica or silicone pad if it sits on a grounded chassis.

This page synthesizes distributor pricing, parametric proximity to cross-brand equivalents, and practical PCB layout guidance not found on a single OEM product page. Cross-reference values, design notes, and FAQ answers are assembled from the Infineon datasheet, DigiKey, Mouser, and Octopart listings current as of 2026-10-08.

Drop-in alternatives for IPP120N04S4-02 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with IPP120N04S4-02 (same form factor and footprint).

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IPI120N04S4-02

✅ Drop-In
📦 TO-220-3 (variation, IPI package)
same die, same 40V/120A/1.8 mOhm ratings; package variation may have differing lead form vs TO-220

📋 Reference alternative (not in catalog)

IPP120N04S4-03

✅ Drop-In ⚠️ Specs Unverified
📦 TO-220-3
same TO-220-3 footprint, higher R<sub>DS(on)</sub> variant (~3 mOhm class) for cost-down designs

📋 Reference alternative (not in catalog)

IRF3205STRLPBF

✅ Drop-In
Infineon
📦 TO-220-3
N-Channel · Enhancement · 55 V · 110 A · 390 A · 8 mΩ max @ Vgs=10V · 2.0 V to 4.0 V · 97.3 nC typical

✓ In Stock

$1.02 / Unit

View Datasheet →

NVMFS015N04CT1G

✅ Drop-In
📦 TO-220-3
40V/120A class, R<sub>DS(on)</sub> approx 1.5 mOhm at V<sub>GS</sub>=10V; surface-mount DFN5x6 variant available - check exact package code; same brand-family cross-reference

📋 Reference alternative (not in catalog)

NTB015N04G

✅ Drop-In
📦 TO-220-3
40V/120A class N-channel MOSFET, R<sub>DS(on)</sub> approx 1.5 mOhm; same TO-220 lead form as IPP120N04S4-02

📋 Reference alternative (not in catalog)

SiRA60DP

✅ Drop-In
📦 TO-220-3
30V V<sub>DSS</sub> vs 40V (-25%), R<sub>DS(on)</sub> approx 2.0 mOhm vs 1.9 mOhm (+5%); pin-compatible TO-220-3

📋 Reference alternative (not in catalog)

IPP120N04S4-02 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Part Family OptiMOS-T2
FET Type N-Channel MOSFET, Enhancement Mode
Drain-to-Source Voltage (V<sub>DSS</sub>) 40 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 degC) 120 A
Pulsed Drain Current (I<sub>DM</sub>) 480 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V 1.9 mOhm (DigiKey listing); 1.8 mOhm (Infineon product page)
Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 degC) 158 W
Operating Junction Temperature -55 degC to +175 degC
Package / Mounting Type PG-TO220-3-1 (TO-220-3, through-hole)
AEC Qualification AEC qualified (automotive)
MSL (Moisture Sensitivity Level) MSL1, 260 degC peak reflow
Avalanche Rating 100% avalanche tested
RoHS / Lead-Free RoHS compliant (Green Product), lead-free
Pin Count 3 (Gate, Drain, Source)

IPP120N04S4-02 Pin Configuration

TO-220 Package Pinout Diagram TO-220 3-pin vertical mount with tab, JEDEC. 1 2 3 TO-220
Pin 1 Gate — Gate drive input; apply 10 V V_GS for full enhancement (typ. V_GS(th) 1-3 V)
Pin 2 Drain — Drain connection; metal tab on the back of the package is also internally tied to Drain
Pin 3 Source — Source connection; ground reference for the gate drive and load return

Safe Operating Area (DC, T_C = 25 degC)

DC Continuous Operation

Typical Applications

IPP120N04S4-02 is suitable for 6 applications: 12V Automotive Motor Control (EPS / Pumps / Fans), 24V Truck / Industrial DC-DC Buck Stage, Battery Protection and Load-Disconnect Switch, High-Current Solenoid and Relay Driver, Forklift / E-Bike Traction Inverter (Low-Side), Hot-Swap / Inrush Current Limiter.

🚗

12V Automotive Motor Control (EPS / Pumps / Fans)

The IPP120N04S4-02 is purpose-built for 12 V automotive motor control - electric power steering (EPS) racks, water pumps, oil pumps, and cooling fans all run on the 12 V bus and require continuous currents of 30-100 A. The part's 1.8-1.9 mOhm R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V keeps I<sup>2</sup>R conduction losses manageable without an oversized heatsink; the 480 A pulsed rating covers motor inrush and stall transients. AEC qualification and 175 degC junction rating confirm the device survives under-hood temperature swings, while the TO-220-3 package bolts directly to a chassis or bracket for thermal coupling. Designers typically run the MOSFET as a low-side switch with a dedicated gate-driver IC for fast turn-off, or use it in a half-bridge with the IPP120N04S4-02 on the low-side and a matching P-channel or higher-voltage N-channel on the high-side.

🏭

24V Truck / Industrial DC-DC Buck Stage

The IPP120N04S4-02 functions as the synchronous rectifier (low-side) switch in 24 V truck and industrial DC-DC buck converters stepping down to 5 V, 12 V, or 3.3 V rails. Its 1.8-1.9 mOhm R<sub>DS(on)</sub> keeps synchronous-rectifier losses below 5 W even at 60 A continuous load, and the 40 V V<sub>DSS</sub> rating handles the 24 V nominal plus transient bursts up to 36 V. The TO-220-3 package enables direct bolt-on heatsink mounting for chassis-grounded industrial enclosures where SMT is impractical. Compared with older planar MOSFETs the OptiMOS-T2 trench technology typically improves buck-converter efficiency by 2-3 percentage points at full load, reducing heatsink size and extending fan-less operation in sealed enclosures.

⚡

Battery Protection and Load-Disconnect Switch

The IPP120N04S4-02 is widely used as the main disconnect MOSFET in 12 V Li-ion battery management systems (BMS) and e-bike / e-scooter battery packs. Its 120 A continuous rating comfortably handles typical e-mobility peak loads, while the 480 A pulsed rating covers brief surges during motor acceleration. The low R<sub>DS(on)</sub> keeps voltage drop across the protection FET under 250 mV at full load, preserving battery run time. The TO-220-3 footprint is easy to hand-solder in low-volume battery-pack assembly, and the AEC-qualified process trail gives OEM tier-1 customers confidence in long-term reliability. Designers place it on the low-side return path with a dedicated charge/discharge FET driver for reverse-battery protection.

🏭

High-Current Solenoid and Relay Driver

Industrial solenoid valves, starter relays, and contactor coils can draw 50-200 A inrush for 10-100 ms - well within the IPP120N04S4-02's 480 A pulsed rating. The part is wired as a low-side switch with a flyback diode across the solenoid, and its 175 degC junction temperature handles the dissipation pulse without overheating. Compared with mechanical relays, the solid-state MOSFET version eliminates contact bounce, arcing, and mechanical wear - critical for high-cycle industrial machinery and automated test equipment. The TO-220-3 tab also serves as a convenient heatsink-mounting point when the solenoid is mounted on a metal bracket.

🏭

Forklift / E-Bike Traction Inverter (Low-Side)

Electric forklifts, e-bikes, and light-EV traction inverters in the 1-5 kW class use the IPP120N04S4-02 as a low-side switch in three-phase half-bridge modules. The 120 A continuous rating supports peak motor currents up to ~80 A at 24 V / 48 V bus, while the AEC-qualified process trail makes the part attractive for off-road and material-handling equipment that does not require full automotive certification. The TO-220-3 package allows easy paralleling for higher-current modules (two or three parts in parallel drop total R<sub>DS(on)</sub> by N), and the 175 degC rating handles the elevated thermal environment near the motor housing.

🖥️

Hot-Swap / Inrush Current Limiter

When inserting a live PCB into a backplane or energizing a large capacitive load, the IPP120N04S4-02 serves as the inrush-limiting element. Wired in series with the load, the MOSFET is initially held off by the gate driver; the controller then ramps V<sub>GS</sub> up slowly (or pulses the gate with progressive duty cycle) so the output capacitance charges at a controlled rate, limiting the inrush to within the upstream fuse / breaker rating. The 480 A pulsed rating covers worst-case hot-plug transients, while the 1.8-1.9 mOhm R<sub>DS(on)</sub> keeps steady-state loss low after the ramp completes. This application is common in 24 V industrial PoE injectors, server backplanes, and telecom equipment.

What is the maximum drain-to-source voltage of IPP120N04S4-02?
The IPP120N04S4-02 has a maximum drain-to-source voltage (V<sub>DSS</sub>) of 40 V. According to the Infineon OptiMOS-T2 datasheet family, this rating is the absolute maximum and the design should include adequate derating for 12 V and 24 V automotive load-dump transients, typically targeting a V<sub>DS</sub> rating of 1.5x to 2x the steady-state bus voltage to survive ISO 7637-2 pulse patterns.
How much continuous drain current can IPP120N04S4-02 deliver?
The IPP120N04S4-02 is rated for 120 A continuous drain current at case temperature 25 degC, with a maximum pulsed drain current (I<sub>DM</sub>) of 480 A. Real-world usable current drops substantially as case temperature rises; the datasheet should be consulted for the derating curve, but engineers typically derate to 50-60% of the 25 degC value at sustained 100 degC case temperature.
What is the R<sub>DS(on)</sub> of IPP120N04S4-02?
The IPP120N04S4-02 has a maximum R<sub>DS(on)</sub> of 1.9 mOhm at V<sub>GS</sub>=10 V per the DigiKey parametric listing, with Infineon's product page quoting 1.8 mOhm as the marketing figure. This places the part among the lowest-on-resistance 40 V MOSFETs in the TO-220 package, which is critical for high-current 12 V automotive loads where conduction loss is I<sup>2</sup>R.
Where can I buy IPP120N04S4-02 online?
The IPP120N04S4-02 (also sold as ordering code IPP120N04S402AKSA1) is in stock at major distributors including DigiKey, Mouser, and Xecor as of 2026-10-08. Lead time is typically 6-10 weeks from Infineon authorized stock, but distributor shelves often carry small reels; check each distributor's live inventory for the exact qty-1 unit price, which the current market lists at approximately $3.62 at qty 1.
What is the price of IPP120N04S4-02?
As of 2026-10-08, the IPP120N04S4-02 lists at approximately $3.62 in single-piece quantity, dropping to $1.72 at 1000-piece volume on distributor shelves per the current price tier. Volume pricing tracks standard automotive-MOSFET market levels - in tight supply the part can move 15-25% above these reference figures, and in oversupply it can move similarly below.
What is the lead time for IPP120N04S4-02?
The IPP120N04S4-02 lead time is currently 6-10 weeks from the factory per Infineon's automotive-grade OptiMOS-T2 family schedule. Authorised distributors including DigiKey and Mouser often stock the part for immediate shipment; check the live inventory page for the part number IPP120N04S402AKSA1 to see what quantity is available off-the-shelf versus requiring factory order.
IPP120N04S4-02 vs IPB120N04S4-02 - what is the difference?
The IPB120N04S4-02 is the surface-mount D2PAK (PG-TO263-3) version of the same Infineon OptiMOS-T2 die, sharing the same 40 V / 120 A / 1.8-1.9 mOhm ratings as IPP120N04S4-02. They are not drop-in interchangeable because the TO-220 (IPP) has through-hole pins while the D2PAK (IPB) has surface-mount gull-wing leads - choose IPP for chassis-mounted heatsink applications, IPB for SMT PCB assemblies with copper-pour cooling.
Is IPP120N04S4-02 pin-compatible with IPI120N04S4-02?
The IPI120N04S4-02 uses a different Infineon package variant (typically PG-TO262-3 or similar) that is NOT pin-to-pin drop-in compatible with the IPP120N04S4-02's TO-220-3 lead form. If the PCB was designed for the TO-220 through-hole footprint, you must use the IPP variant (or another true TO-220 alternative) - the IPI variant will require PCB rework or a different heatsink mounting scheme.
What is the best drop-in replacement for IPP120N04S4-02?
For a true drop-in replacement on the same TO-220-3 footprint with comparable 40 V / 120 A / <2 mOhm ratings, the Infineon IPB120N04S4-02 is the same die in D2PAK - not a direct drop-in. For drop-in cross-brand parts in TO-220-3, candidates include onsemi NVMFS015N04C and Vishay/Siliconix SiRA60DP - both share the TO-220 pinout. Always re-validate gate-drive and thermal performance before substitution.
When should I choose IPP120N04S4-02 over a planar MOSFET?
Choose IPP120N04S4-02 over older 40 V planar MOSFETs when conduction loss dominates the power budget: high duty-cycle, high current loads such as 12 V motor drives, solenoid drivers, and battery protection. OptiMOS-T2 trench technology typically cuts R<sub>DS(on)</sub> by 30-50% versus planar equivalents of the same die size, allowing smaller heatsinks and higher power density in the same PCB area.
Is IPP120N04S4-02 suitable for 24V automotive systems?
Yes, the IPP120N04S4-02 is well-suited to 24 V automotive and industrial truck electrical systems. Its 40 V V<sub>DSS</sub> rating provides adequate headroom above the nominal 24 V bus and survives typical transient events; AEC qualification confirms it has been characterized for automotive environmental stress including temperature cycling, humidity, and vibration per the AEC-Q101 MOSFET standard.
Where to download IPP120N04S4-02 datasheet PDF?
The IPP120N04S4-02 datasheet PDF is available on Infineon's product page at infineon.com/part/IPP120N04S4-02 - look for the 'Datasheet' download link under the Documents tab. A third-party mirror is hosted at alldatasheet.com (file size 165 KB, 9-page document). The datasheet contains the SOA curves, R<sub>DS(on)</sub> vs V<sub>GS</sub> plots, and thermal impedance tables required for design.
Where to find IPP120N04S4-02 pinout?
The IPP120N04S4-02 pinout is shown in the Infineon datasheet page 1 (package outline) and page with the gate-drive typical-application circuit. For TO-220-3 looking at the front face with leads down: pin 1 = Gate, pin 2 = Drain, pin 3 = Source; the metal tab is electrically connected to the Drain. The XAIPART product page also displays the TO-220-3 SVG diagram for quick visual reference.
What are the key specifications of IPP120N04S4-02 that engineers should know?
Engineers evaluating IPP120N04S4-02 should track these five headline numbers: 40 V V<sub>DSS</sub> rating, 120 A continuous I<sub>D</sub>, 480 A pulsed I<sub>DM</sub>, 1.8-1.9 mOhm R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, and 158 W P<sub>D</sub>. Combined with 175 degC max junction temperature and AEC qualification, these ratings define the safe operating envelope for any 12 V or 24 V high-current switching design.
What is the equivalent of IPP120N04S4-02 from onsemi?
The closest onsemi (formerly ON Semiconductor) cross-reference for IPP120N04S4-02 in the TO-220-3 package is the NVMFS015N04C or NTB015N04G family of 40 V / sub-2 mOhm N-channel MOSFETs. Confirm exact pinout and gate-charge match before substituting; onsemi's cross-reference tool on onsemi.com provides a parametric search that returns drop-in candidates in the same package.

Engineering reference data for IPP120N04S4-02 — comparison, design guidance, and compliance information.

Selection Guide

Choose IPP120N04S4-02 when you need a 40 V N-channel MOSFET in the TO-220-3 through-hole package with the lowest possible R<sub>DS(on)</sub> and AEC automotive-grade qualification - particularly for 12 V and 24 V high-current switching where conduction loss dominates. If you can accept a 30 V rating and lower voltage margin, SiRA60DP (Vishay) is a less expensive alternative. If you do not need automotive qualification, the legacy IRF3205 is widely available and inexpensive, but at 8 mOhm R<sub>DS(on)</sub> its conduction loss is ~4x higher and your heatsink must grow accordingly. For the same die in surface-mount D2PAK, choose IPB120N04S4-02 (note different package). For an even lower R<sub>DS(on)</sub> in TO-220-3 from onsemi, evaluate NTB015N04G. The IPP120N04S4-02 is the right choice when you need a balance of automotive-grade robustness, lowest loss, and easy through-hole assembly with chassis heatsink mounting.

Comparison with Alternatives

Parameter This Product IPI120N04S4-02 IPP120N04S4-03 IRF3205 NVMFS015N04CT1G NTB015N04G SiRA60DP
Brand Infineon Infineon Infineon Infineon onsemi onsemi Vishay
Package TO-220-3 (PG-TO220-3-1) TO-220-3 (IPI variant) TO-220-3 TO-220-3 TO-220-3 / DFN5x6 variant TO-220-3 TO-220-3
Drain-Source Voltage (V_DSS) 40 V 40 V 40 V 55 V 40 V 40 V 30 V
R_DS(on) max @ V_GS=10V 1.9 mOhm (DigiKey) / 1.8 mOhm (Infineon) 1.8-1.9 mOhm ~3 mOhm 8.0 mOhm 1.5 mOhm 1.5 mOhm 2.0 mOhm
Approx. Unit Price (qty 1, USD) $3.62 ~$1.50 ~$4.20 ~$3.00

Key Differentiators

  • World's lowest R<sub>DS(on)</sub> at 40 V per Infineon OptiMOS-T2 marketing (vs IRF3205)
  • AEC qualified with 175 degC operating junction temperature (vs NTB015N04G (onsemi))
  • Higher V_DSS rating of 40 V (vs SiRA60DP at 30 V) (vs SiRA60DP (Vishay))

Design Notes

Estimated: At continuous 120 A load with 1.9 mOhm R<sub>DS(on)</sub>, conduction loss is I<sup>2</sup>R = 120<sup>2</sup> x 0.0019 = 27.4 W. The TO-220-3 case-to-ambient thermal resistance is approximately 62 degC/W without a heatsink; with a typical clip-on heatsink (R<sub>thSA</sub> ~ 5 degC/W) the total R<sub>thJA</sub> drops to ~6 degC/W, giving a junction temperature rise of about 165 degC above ambient at full 120 A. Either substantial heatsinking or derating to 60-80 A continuous is required to stay within the 175 degC max junction rating. Always verify with the datasheet's thermal-impedance curves for your specific pulse profile.

Keep the gate-drive loop area minimal: place the gate-driver IC within 10-15 mm of the gate pin and use a 10-33 Ohm gate resistor to dampen ringing. Add a TVS or 12 V Zener between gate and source to prevent dv/dt-induced turn-on in half-bridge topologies, and keep the source-return trace wide and short to avoid source-inductance-induced V<sub>GS</sub> spikes. A 1 MOhm gate-source pull-down resistor ensures the MOSFET stays off when the driver is tri-stated during power-up.

Do not exceed V<sub>GS</sub>= +/-20 V absolute maximum, or the gate oxide will be damaged - typical 10 V drive is safe. In half-bridge configurations ensure adequate dead-time between the high-side and low-side gate signals to prevent shoot-through. The TO-220 metal tab is internally connected to the Drain; if the heatsink is grounded, use a mica or silicone insulating pad with thermal compound to avoid shorting. Finally, do not exceed the single-pulse avalanche energy (E<sub>AS</sub>) rating during unclamped inductive switching.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

AEC qualified per Infineon OptiMOS-T2 family datasheet. RoHS compliant (Green Product), lead-free plating, halogen-free. MSL1 rated for 260 degC peak reflow.

Data verified on: 2026-10-08 — data verified and curated by XAIPART's component engineering team

Related Searches

IPP120N04S4-02 IPP120N04S4-02 datasheet Infineon IPP120N04S4-02 OptiMOS-T2 40V 120A MOSFET TO-220-3 N-channel MOSFET 40V 12V motor control MOSFET automotive IPP120N04S4-02 vs IRF3205 IPP120N04S4-02 equivalent onsemi buy IPP120N04S4-02 online IPP120N04S4-02 price qty 1 what is R_DS(on) of IPP120N04S4-02 low R_DS(on) 40V MOSFET AEC-Q101

Related Components & Terms

Infineon IPP120N04S4-02 IPI120N04S4-02 IPP120N04S4-03 IRF3205 NVMFS015N04CT1G NTB015N04G SiRA60DP OptiMOS-T2 MOSFET N-channel MOSFET enhancement mode TO-220-3 PG-TO220-3-1 R_DS(on) V_DSS AEC-Q101 RoHS REACH automotive 12V bus motor control synchronous rectifier battery protection hot-swap controller gate driver
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