IRF7907TRPBF - Dual N-Ch 30V 9.1A/11A MOSFET | Infineon SO-8
料号： IRF7907TRPBF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.86 | $8.60 |
| 100 | $0.72 | $72.00 |
| 500 | $0.61 | $305.00 |
| 1,000 | $0.52 | $520.00 |
| 3,000 | $0.43 | $1,290.00 |
IRF7907TRPBF 概述
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. As a dual N-channel device, the IRF7907TRPBF integrates two independent MOSFETs on a single die, allowing engineers to replace two discrete transistors with one part - saving PCB area, simplifying layout, and reducing parasitic inductance in synchronous buck or half-bridge topologies.
Key specifications from the manufacturer product page include a maximum drain-source voltage of 30 V, a maximum on-resistance of 11.8 mOhm at VGS = 10 V (with some sources citing 9.8 mOhm typical), a continuous drain current of 9.1 A per channel at 25 C, and a pulsed current capability of 11 A. The SO-8 package is rated for 2 W total power dissipation. Gate threshold voltage (VGS(th)) is approximately 1.35 V, supporting logic-level drive from 3.3 V or 5 V microcontrollers.
The IRF7907 family leverages Infineon's IR MOSFET technology, which uses a hexfet-style trench structure to minimize R DS(on) per unit silicon area. The low on-resistance reduces conduction losses in continuous-current applications, while the low gate charge enables fast switching transitions that reduce switching losses at higher frequencies.
Typical applications include point-of-load (POL) synchronous buck converters, DC motor drivers, battery protection circuits, load switches, and power-ORing circuits in computing and telecom equipment. The dual-channel configuration makes the part especially attractive for synchronous rectification where one FET acts as the control switch and the other as the freewheeling switch.
When designing with this part, ensure the gate-drive voltage is at least 10 V to achieve the rated R DS(on). At high load currents, calculate conduction losses as P = I^2 x R DS(on) and verify the SO-8 thermal pad footprint is adequately copper-clad to keep junction temperature within the 150 C maximum.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
直接替换替代料： IRF7907TRPBF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IRF7907TRPBF （相同外形与封装尺寸） ——差异在于 Package, Technology, Operating Temperature Range, Configuration, Manufacturer.
快速对比工具——选择替代料号进行并排对比：
IRF7907PBF
✅ 直接替换📋 参考替代料（不在目录中）
IRF7313TRPBF
✅ 直接替换✓ 有现货
$0.27 / 个
查看数据手册 →IRF7342TRPBF
✅ 直接替换✓ 有现货
$0.48 / 个
查看数据手册 →IRF9952TRPBF
✅ 直接替换✓ 有现货
$0.32 / 个
查看数据手册 →VBA3316
✅ 直接替换📋 参考替代料（不在目录中）
IRF7313TRPBF
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.27 / 个
查看数据手册 →IRF7907TRPBF 最大额定值与电气特性
| Configuration | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) Max | 30 V |
| Continuous Drain Current (ID) Max | 9.1 A per channel at 25 C |
| Pulsed Drain Current (IDM) Max | 11 A |
| On-Resistance (RDS(on)) Max | 11.8 mOhm at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | 1.35 V (typ) |
| Total Power Dissipation (PD) Max | 2 W |
| 工作温度范围 | -55 C to +150 C |
| 封装 | 8-SOIC (SO-8) |
| 安装类型 | Surface Mount |
| Technology | IR MOSFET (Infineon hexfet-style trench) |
| Lead-Free Status | Yes (PBF suffix) |
| Packaging | Tape & Reel (TR) |
| RoHS 状态 | Compliant |
| Channel Polarity | N-Channel (both) |
IRF7907TRPBF 引脚配置
| 引脚 1 | G1 — Gate of MOSFET 1 |
| 引脚 2 | D1 — Drain of MOSFET 1 |
| 引脚 3 | S1 — Source of MOSFET 1 |
| 引脚 4 | G2 — Gate of MOSFET 2 (per standard SO-8 dual-FET pinout) |
| 引脚 5 | D2 — Drain of MOSFET 2 |
| 引脚 6 | S2 — Source of MOSFET 2 |
| 引脚 7 | D1' — Drain of MOSFET 1 (alternate connection) |
| 引脚 8 | S2' — Source of MOSFET 2 (alternate connection) |
安全工作区 - DC Continuous
典型应用
IRF7907TRPBF 适用于 6 应用s: Point-of-Load (POL) Synchronous Buck Converter, DC Motor Drive (Half-Bridge / Forward Converter), USB Type-C / Battery Protection Load Switch, Telecom / Server Power-ORing Circuit, LED Driver High-Side Switch, Industrial 24V Solenoid / Relay Driver.
Point-of-Load (POL) Synchronous Buck Converter
The IRF7907TRPBF's dual N-channel 30V/9.1A configuration is purpose-built for synchronous buck POL converters delivering 1A to 8A from a 5V, 12V, or 19V intermediate bus. Place one FET as the high-side control switch and the second as the low-side synchronous rectifier, sharing the same SO-8 footprint to halve board area versus two discretes. The 11.8 mOhm RDS(on) per channel keeps conduction losses below 0.6W at 5A output, while the 1.35V gate threshold supports direct drive from 5V logic without a charge pump, reducing BOM cost. Compared to Schottky-diode rectification, this dual-FET arrangement typically improves efficiency by 4-7% at full load and 2-3% at light load, directly cutting heatsink requirements in space-constrained designs.
推荐
DC Motor Drive (Half-Bridge / Forward Converter)
Use the IRF7907TRPBF's two independent N-channel MOSFETs to build a half-bridge DC motor driver for brushed motors up to 9.1A continuous and 24V bus operation. The two channels can be paralleled for a single high-current forward leg, or one channel can drive the high-side while the other drives the low-side with appropriate bootstrap gate drive. The 30V VDS rating provides comfortable headroom above 24V industrial supplies, and the 11A pulsed rating accommodates motor stall inrush for typical 50-200ms durations. Add a complementary dual P-channel part for full H-bridge bidirectional control, or pair with a gate driver such as the IR2101STRPBF for PWM speed control up to 50kHz without thermal runaway.
推荐
USB Type-C / Battery Protection Load Switch
The IRF7907TRPBF is well suited as a back-to-back dual MOSFET load switch for USB Type-C VBUS isolation, battery pack protection, and power-path management in portable electronics. With both channels in series, the back-to-back topology eliminates body-diode reverse conduction that a single MOSFET cannot block. The 9.1A continuous rating supports USB Power Delivery up to 100W (20V/5A), and the 1.35V gate threshold ensures full enhancement from a 3.3V microcontroller GPIO. Place a 100kohm resistor across gate-source of each FET to ensure defined off-state when the MCU is in reset, and use a 10kohm gate resistor to limit ringing during fast turn-on transitions in hot-plug events.
推荐
Telecom / Server Power-ORing Circuit
Deploy the IRF7907TRPBF in redundant power-supply ORing circuits for telecom base stations, server motherboards, and network switches where two 12V feeds must combine with minimal loss. Each MOSFET's 11.8 mOhm RDS(on) introduces only ~0.06V drop at 5A versus 0.4V for a Schottky diode - cutting dissipation by 85% and eliminating the need for bulky TO-220 diodes. The dual channel simplifies PCB layout by placing both ORing FETs in one SO-8 footprint, reducing parasitic loop inductance critical for hot-swap transients. Reverse-current blocking is automatic via the MOSFET body diode, with a small gate-source pull-down to ensure defined turn-off if the controller fails.
推荐
LED Driver High-Side Switch
Use the IRF7907TRPBF as a high-side PWM switch for high-brightness LED drivers in architectural lighting, automotive headlights, and signage. Each channel can switch up to 9.1A continuously, enabling direct drive of LED strings up to 100W from a 24V supply. The low gate charge (typically 18nC) supports PWM dimming frequencies up to 20kHz without audible noise, and the 1.35V threshold ensures clean PWM edges from a 3.3V MCU without needing a gate-driver IC. Add a small RC snubber (10ohm + 1nF) across drain-source if long LED cables create ringing, and parallel the two channels for higher-current LED arrays up to 18A continuous.
推荐
Industrial 24V Solenoid / Relay Driver
The IRF7907TRPBF is a robust solenoid and relay driver for industrial 24V control systems, factory automation PLCs, and HVAC actuators. Each N-channel channel can switch a 24V inductive load up to 9.1A continuous, well above typical solenoid currents of 1-3A, and the dual-channel format lets one SO-8 drive two independent solenoids. Include a flyback diode (or a TVS such as SMBJ6.0A) across inductive loads to clamp the turn-off spike within the 30V VDS rating. The IR MOSFET technology's avalanche energy rating provides additional transient robustness against the inductive kick typical of solenoid release, extending service life in high-cycle applications like packaging machinery.
推荐
推荐产品汇总
工程参考数据： IRF7907TRPBF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IRF7907PBF | IRF7313TRPBF | IRF7342TRPBF | VBA3316 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | SO-8 (8-SOIC) | SO-8 (8-SOIC) - same | SO-8 (8-SOIC) - same | SO-8 (8-SOIC) - same | SO-8 (8-SOIC) - same |
| VDS Max | 30 V | 30 V | 30 V | 30 V | 30 V |
| Continuous ID (per channel) | 9.1 A | 9.1 A | 5.8 A | 3.4 A | 8.5 A |
| Total Power Dissipation | 2 W | 2 W | 2 W | 2 W | 2 W |
| Unit Price (qty 1, as of 2026-09-11) | $0.95 | $0.92 | $0.78 | $0.65 | $0.27 |
| Lead-Free / RoHS | Yes / Compliant | Yes / Compliant | Yes / Compliant | Yes / Compliant | Yes / Compliant |
关键差异点
- Higher continuous current than IRF7342 in same SO-8 footprint （对比 IRF7342TRPBF)
- Lower RDS(on) than IRF7313 for higher efficiency （对比 IRF7313TRPBF)
- Domestic Chinese cross-reference option for supply diversification （对比 VBA3316 (VBsemi))
设计说明
Estimated: at 9.1A continuous per channel in free air, each MOSFET dissipates approximately P = 9.1^2 x 0.0118 = 0.98W, totaling 1.96W for both channels - right at the 2W SO-8 limit. Place at least 1 sq inch of 2 oz copper on the drain pads (pins 2, 5, 7) to keep theta_JA near 50 C/W, limiting junction rise to ~98 C above 25 C ambient. Derate to 4-5A per channel for reliable 70 C ambient operation without forced airflow. Source pins (3, 6, 8) carry most heat out of the die, so thermal vias under the SO-8 thermal pad are critical.
Keep the high-current loop (input cap -> high-side drain-source -> low-side drain-source -> ground) as small as possible - aim for <5mm total loop length to minimize voltage spikes and ringing at turn-off. Place the gate-drive resistors (10-100 ohm) within 5mm of the gate pins to suppress parasitic oscillations. Use a star-ground topology: tie the source-pin returns of both channels to a single ground via, not the same ground as the gate-drive return. This prevents ground-bounce coupling between the two FETs in synchronous buck applications.
Do not drive the gate above the absolute maximum VGS of +/- 20V - even brief transients from a misconfigured gate driver can permanently damage the thin gate oxide. Do not exceed the 30V VDS rating during switching transients; add a TVS or RC snubber across drain-source if the inductive load creates ringing above 25V. Do not parallel the two channels without gate-source resistors on each FET - small threshold mismatches will cause current hogging and thermal runaway in one channel.
For full enhancement at the rated 11.8 mOhm RDS(on), drive the gate to at least 10V. At VGS = 4.5V (logic-level), RDS(on) roughly triples to 35 mOhm, increasing conduction losses by 3x. For 3.3V microcontrollers, use a gate-driver IC like the TPS57160QDGQRQ1's bootstrap output or a simple charge-pump (TC7660) to generate 10V from the 3.3V rail. Place a 100kohm resistor from each gate to source to ensure defined off-state if the MCU pin becomes high-impedance during reset or programming.
合规信息
RoHS compliant and lead-free per PBF suffix. Not AEC-Q100 qualified - choose an automotive-grade alternative for vehicle applications. Halogen-free status not explicitly stated in available data.
