IRF7907TRPBF vs IRF7313TRPBF 对比

详细并排对比 IRF7907TRPBF 出自 Infineon 和 IRF7313TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF7907TRPBF IRF7313TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.43 $0.27
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) Max 9.1 A per channel at 25 C —
Pulsed Drain Current (IDM) Max 11 A —
On-Resistance (RDS(on)) Max 11.8 mOhm at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 1.35 V (typ) —
Total Power Dissipation (PD) Max 2 W —
工作温度范围 -55 C to +150 C -55C to +150C (junction)
封装 8-SOIC (SO-8) 8-pin SOIC (SO-8) surface mount
安装类型 Surface Mount Surface Mount
Technology IR MOSFET (Infineon hexfet-style trench) IR MOSFET Generation V (HEXFET Fifth Generation)
Lead-Free Status Yes (PBF suffix) —
Packaging Tape & Reel (TR) —
RoHS 状态 Compliant —
Channel Polarity N-Channel (both) —
Manufacturer — Infineon (formerly International Rectifier)
Part Number — IRF7313TRPBF
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
On-Resistance (RDS(on)) max — 29 mOhm at VGS=10V
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (typical range)
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
MSL 等级 — 1
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

数据手册与资源

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