IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon
料号： IRFH8318TRPBF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.2 | $1.20 |
| 10 | $1.05 | $10.50 |
| 100 | $0.85 | $85.00 |
| 500 | $0.72 | $360.00 |
| 1,000 | $0.62 | $620.00 |
| 3,000 | $0.48 | $1,440.00 |
IRFH8318TRPBF 概述
Key features include an extremely low on-state resistance of 3.1 mΩ max, a 30 V drain-source breakdown voltage, 41 nC total gate charge optimized for high-frequency switching, and a maximum power dissipation of 3.6 W at Ta (59 W at Tc). The SuperSO8 (PQFN 5x6) package provides a low thermal resistance path and is widely accepted as the de-facto footprint for 30 V synchronous MOSFETs in point-of-load and CPU/GPU VR applications. The StrongIRFET™ silicon platform is engineered to balance low RDS(on), low Qg, and robust avalanche ruggedness.
This part is built on Infineon's advanced trench MOSFET process, delivering a low figure-of-merit (FOM = RDS(on) × Qg) that minimizes conduction and switching losses simultaneously. Its low gate charge supports multi-MHz operation in buck converters, while its low on-resistance keeps conduction losses negligible at high currents, making it ideal for high-density, high-efficiency synchronous rectification in switched-mode power supplies.
Typical applications include synchronous rectification in high-frequency buck converters for computing platforms (servers, workstations, graphics cards), DC-DC point-of-load (POL) modules, OR-ing FETs in redundant power architectures, and high-current low-voltage motor drives. The combination of 30 V rating and 120 A pulsed current capability also makes it well-suited for battery management and protection circuits in 12 V rail systems.
When designing with this device, ensure the gate driver can source/sink sufficient peak current to charge the 41 nC Qg quickly, and use Kelvin-source PCB layout where possible to keep the gate loop inductance low. The exposed pad must be soldered to a sufficiently large copper pour to achieve the rated 59 W Tc power dissipation, and an appropriate TVS or snubber may be required in avalanche-prone topologies.
This page synthesizes distributor pricing, drop-in alternatives, and practical PCB-layout notes not found in the bare manufacturer datasheet, providing engineers a single source for selection, sourcing, and design considerations.
直接替换替代料： IRFH8318TRPBF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IRFH8318TRPBF （相同外形与封装尺寸） ——差异在于 Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Package, Total Gate Charge (Qg).
快速对比工具——选择替代料号进行并排对比：
IRFH8311TRPBF
✅ 直接替换📋 参考替代料（不在目录中）
IRFH8330TRPBF
✅ 直接替换📋 参考替代料（不在目录中）
IRFR3806TRPBF
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.52 / 个
查看数据手册 →NTMFS4934NT1G
✅ 直接替换📋 参考替代料（不在目录中）
SiRA12DP-T1-GE3
✅ 直接替换📋 参考替代料（不在目录中）
PSMN3R5-30LL
✅ 直接替换📋 参考替代料（不在目录中）
IRFH8318TRPBF 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Part Number | IRFH8318TRPBF |
| Technology | StrongIRFET™ (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta=25°C | 27 A |
| Continuous Drain Current (ID) at Tc=25°C | 120 A |
| On-Resistance RDS(on) max at VGS=10V | 3.1 mΩ |
| Total Gate Charge (Qg) | 41 nC |
| Power Dissipation (Ta) | 3.6 W |
| Power Dissipation (Tc) | 59 W |
| 封装 | PQFN 5x6 (SuperSO8, 8-PowerTDFN) |
| 安装类型 | Surface Mount |
| 工作温度 | -55°C to +150°C |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
| MSL 等级 | 1 |
| Description | Synchronous MOSFET for high-frequency buck converters |
IRFH8318TRPBF 引脚配置
| 引脚 1 | Source — Source terminal (low-side return) |
| 引脚 2 | Source — Source terminal (low-side return) |
| 引脚 3 | Source — Source terminal (low-side return) |
| 引脚 4 | Gate — Gate drive input (10V recommended for full RDS(on)) |
| 引脚 5 | Drain — Drain terminal (high-voltage switching node) |
| 引脚 6 | Drain — Drain terminal (high-voltage switching node) |
| 引脚 7 | Drain — Drain terminal (high-voltage switching node) |
| 引脚 8 | Drain — Drain terminal (high-voltage switching node) |
| 引脚 9 | EP — Exposed Pad - electrically Drain; thermal pad, must be soldered to PCB copper |
安全工作区 (DC, Tj=25°C)
典型应用
IRFH8318TRPBF 适用于 7 应用s: Synchronous Buck Converter (12V POL), Server & Datacenter VR, OR-ing FET for Redundant Power, High-Current Motor Drive (Low-Voltage), Battery Protection & Load Switch, Telecom 48V-to-POL DC-DC Stage, USB Power Delivery (PD) Fast Charger.
Synchronous Buck Converter (12V POL)
The IRFH8318TRPBF is the low-side synchronous rectifier in 12 V point-of-load buck converters feeding CPU, GPU, ASIC, and FPGA core rails. Its 3.1 mΩ max RDS(on) at VGS=10 V keeps conduction losses below 1 W even at 20 A load, while the 41 nC Qg allows switching frequencies up to 1-2 MHz without excessive gate-drive loss. Compared to a Schottky diode solution, this StrongIRFET™ part delivers 5-8% higher efficiency at full load.
推荐
Server & Datacenter VR
In server and datacenter voltage-regulator modules, the IRFH8318TRPBF is used as the synchronous FET in multi-phase VR topologies for 12 V to 0.8-3.3 V conversion. The PQFN 5x6 footprint is shared across all phases, simplifying PCB layout, and its 120 A TC rating provides ample margin for transient load spikes. The part's strong avalanche rating makes it robust against output-inductor ringing at 1 MHz switching frequencies typical in modern VR13 applications.
推荐
OR-ing FET for Redundant Power
The IRFH8318TRPBF is commonly deployed as an OR-ing FET in N+1 redundant 12 V power architectures for telecom and networking equipment. Its 3.1 mΩ RDS(on) minimizes voltage drop during normal operation, while the 30 V VDS rating comfortably exceeds 12 V nominal with full transient headroom. The exposed pad allows heat to dissipate directly into the OR-ing busbar copper pour, supporting continuous 27 A TA operation with minimal temperature rise.
推荐
High-Current Motor Drive (Low-Voltage)
In low-voltage (12-24 V) brushless DC motor drive half-bridges and H-bridges, the IRFH8318TRPBF serves as the switching element with its 120 A pulsed current capability handling motor inrush surges. The 3.1 mΩ RDS(on) reduces I²R losses during continuous PWM operation, extending battery runtime in cordless tools and e-mobility applications. The PQFN 5x6 footprint is also mechanically robust for vibration-prone environments.
推荐
Battery Protection & Load Switch
The IRFH8318TRPBF acts as a high-current load switch and reverse-battery protection FET in 12 V Li-ion battery packs and uninterruptible power supplies. Its low RDS(on) keeps voltage drop below 100 mV at 30 A discharge, preserving battery capacity and runtime. The StrongIRFET™ silicon is rated for repetitive avalanche energy, providing robust protection against load-dump transients common in automotive and industrial battery systems.
推荐
Telecom 48V-to-POL DC-DC Stage
In telecom isolated DC-DC bricks that step 48 V down to 12 V intermediate bus, the IRFH8318TRPBF is used in the secondary-side synchronous rectification stage delivering up to 30 A. The 30 V VDS rating is intentionally sized for the 12 V bus plus transient margin, allowing fast switching without avalanche stress. The 41 nC Qg supports 200-500 kHz switching typical of telecom bricks, balancing efficiency and magnetic size.
推荐
USB Power Delivery (PD) Fast Charger
In USB-PD 100W+ charger designs, the IRFH8318TRPBF is used as the synchronous rectifier on the secondary side of the resonant or flyback topology. Its 3.1 mΩ RDS(on) keeps rectifier losses below 2.5 W at 5 A output, helping meet DOE Level VI and EU CoC Tier 2 efficiency standards. The PQFN 5x6 footprint is preferred for its compactness in dense charger modules, and the low Qg enables MHz-class operation in active-clamp flyback designs.
推荐
推荐产品汇总
工程参考数据： IRFH8318TRPBF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IRFH8311TRPBF | IRFH8330TRPBF | NTMFS4934NT1G | SiRA12DP-T1-GE3 | PSMN3R5-30LL |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | Vishay | NXP |
| Package | PQFN 5x6 (SuperSO8) | PQFN 5x6 (SuperSO8) - same | PQFN 5x6 (SuperSO8) - same | PQFN 5x6 (SO-8FL) - same | PowerPAK SO-8 - same | PQFN 5x6 - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| RDS(on) max at VGS=10V | 3.1 mΩ | 4.0 mΩ (+29%) | 2.5 mΩ (-19%) | 3.0 mΩ (-3%) | 3.2 mΩ (+3%) | 3.5 mΩ (+13%) |
| Continuous Drain Current at TC=25°C | 120 A | 100 A | 140 A | 120 A | 100 A | 110 A |
| Total Gate Charge (Qg) | 41 nC | 33 nC | 55 nC | 38 nC | 48 nC | 45 nC |
| Power Dissipation at TC=25°C | 59 W | 50 W | 65 W | 60 W | 55 W | 52 W |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
关键差异点
- Lowest Qg in 30V/3mΩ class enables MHz switching （对比 SiRA12DP-T1-GE3)
- Highest continuous TC current at 30V/3mΩ （对比 NTMFS4934NT1G)
- StrongIRFET™ platform for avalanche ruggedness （对比 IRFR3806TRPBF)
- Better price-performance ratio vs Vishay equivalent （对比 SiRA12DP-T1-GE3)
设计说明
The exposed pad (pin 9) of the PQFN 5x6 package MUST be soldered to a PCB copper pour of at least 1 square inch (645 mm²) to achieve the rated 59 W TC power dissipation. Without proper thermal vias (recommended: 9-12 vias at 0.3 mm drill, 1 mm pitch) under the exposed pad, the device can only dissipate ~3.6 W as listed for TA. Use 2 oz copper on outer layers or 1 oz on inner layers with multiple thermal via arrays for best thermal performance.
Use a Kelvin-source connection by routing the gate driver's return directly to the source pins (1-3) rather than sharing the high-current source path. This eliminates source-inductance-induced gate-drive ringing and prevents the well-known 'Miller turn-on' failure mode where dv/dt on the drain couples through Cgd and partially turns on the MOSFET. Keep the gate loop area below 0.5 cm² for switching edges under 10 ns.
Estimated: At 25 A continuous drain current and 3.1 mΩ RDS(on), the conduction loss is P = I² × R = 25² × 0.0031 = 1.94 W. With proper 1 sq-in copper pour the thermal resistance θJA is approximately 50°C/W, yielding a 97°C temperature rise above ambient. Above 35 A continuous on the standard footprint, a heatsink or forced-air cooling becomes necessary to keep junction below 150°C maximum rating.
Do not exceed VGS=±20 V absolute maximum; use a gate-source Zener clamp (typically 12-15 V) to protect against transients from the gate driver. Inductive switching applications must include a freewheeling path or TVS clamp to absorb avalanche energy. When paralleling multiple IRFH8318TRPBF parts, add a 10Ω gate-source resistor on each device to suppress parasitic oscillations from gate-loop inductance mismatch.
合规信息
RoHS compliant and lead-free (Pb-free) per Infineon product page; 'PBF' suffix indicates lead-free finish. MSL Level 1 per JEDEC J-STD-020. Not AEC-Q100 qualified (industrial/consumer grade).
