IRFH8201TRPBF - 25V N-Channel StrongIRFET MOSFET | Infineon
料号： IRFH8201TRPBF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.08 | $2.08 |
| 10 | $1.87 | $18.70 |
| 100 | $1.55 | $155.00 |
| 500 | $1.28 | $640.00 |
| 1,000 | $1.05 | $1,050.00 |
IRFH8201TRPBF 概述
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to amplify or switch electronic signals in power conversion, motor drive, and load management circuits. The StrongIRFET family targets low-voltage (<=40V), high-current synchronous rectification, OR-ing, and hot-swap roles where ultra-low on-resistance minimizes conduction loss; the IRFH8201TRPBF belongs to this StrongIRFET hierarchy.
Key specifications include a 1.35V maximum gate threshold voltage, 56nC total gate charge at VGS=10V, and a 7.33nF output capacitance with 850pF reverse transfer capacitance. The SuperSO8 5x6 (PQFN-8) footprint with bottom-side exposed pad provides a low thermal resistance path, enabling 156W Tc dissipation. StrongIRFET silicon trench technology optimizes the figure-of-merit (FOM = RDS(on) x Qg) for switching applications.
The device architecture uses an advanced trench-gate cell design that minimizes both conduction loss and switching loss simultaneously. The combination of sub-milliohm RDS(on) and moderate gate charge supports switching frequencies well into the 100s of kHz for synchronous rectification, while its robust 324A pulsed ID rating provides ample SOA margin for transient events.
Typical applications include 12V OR-ing in redundant power systems, hot-swap controllers on server backplanes, DC-DC converter synchronous rectifiers, battery management load switches, and motor drive low-side switches. The 25V VDS rating also makes it suitable for USB-PD and 19V notebook adapter switching stages.
When designing with this part, minimize gate-loop inductance by placing the gate driver within 5mm of the gate pin and using a Kelvin-source connection whenever possible. The exposed pad must be soldered to a sufficiently large copper pour to achieve rated thermal performance - aim for at least 25mm^2 of 2oz copper on both top and bottom layers.
This page synthesizes distributor pricing from LCSC and Octopart, drop-in alternatives from the Infineon cross-reference tool, and practical PCB layout notes not found in the manufacturer datasheet.
直接替换替代料： IRFH8201TRPBF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IRFH8201TRPBF （相同外形与封装尺寸） ——差异在于 Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
快速对比工具——选择替代料号进行并排对比：
IRFH7084TRPBF
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.45 / 个
查看数据手册 →IRFH8318TRPBF
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.48 / 个
查看数据手册 →BSC014N04LSATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.74 / 个
查看数据手册 →NTMFS4934NT1G
✅ 直接替换📋 参考替代料（不在目录中）
SiRA52DP-T1-GE3
✅ 直接替换📋 参考替代料（不在目录中）
DMG9926USD-13
✅ 直接替换📋 参考替代料（不在目录中）
IRFH8201TRPBF 最大额定值与电气特性
| FET Type | N-Channel |
| Technology | StrongIRFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) at TA=25C | 49 A |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| Pulsed Drain Current (IDM) | 324 A |
| RDS(on) max at VGS=10V | 0.95 mOhm |
| Gate Threshold Voltage (VGS(th)) | 1.35 V max |
| Total Gate Charge (Qg) | 56 nC at VGS=10V |
| Output Capacitance (Coss) | 7.33 nF |
| Reverse Transfer Capacitance (Crss) | 850 pF |
| Power Dissipation (TA) | 3.6 W |
| Power Dissipation (TC) | 156 W |
| 工作温度范围 | -55C to +150C |
| 封装 | SuperSO8 5x6 (PQFN-8) with exposed pad |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
IRFH8201TRPBF 引脚配置
| 引脚 1 | G — Gate |
| 引脚 2 | S — Source |
| 引脚 3 | S — Source |
| 引脚 4 | S — Source (Kelvin return) |
| 引脚 5 | D — Drain |
| 引脚 6 | D — Drain |
| 引脚 7 | D — Drain |
| 引脚 8 | D — Drain |
安全工作区 (TC=25C, single pulse)
典型应用
IRFH8201TRPBF 适用于 6 应用s: 12V Bus OR-ing in Redundant Power Systems, DC-DC Synchronous Rectifier (Buck Converter Low-Side), Hot-Swap / In-Rush Current Limiting, USB-PD and Notebook Adapter Output Switching, Battery Management Load Switch, Motor Drive Low-Side Switch (BLDC, Brushed DC).
12V Bus OR-ing in Redundant Power Systems
The IRFH8201TRPBF is explicitly designed as an OR-ing MOSFET for 12V typical bus in-rush current applications per the Infineon datasheet. Its 0.95 mOhm RDS(on) at VGS=10V minimizes forward voltage drop across the OR-ing FET, which directly improves power-supply efficiency in redundant server and telecom -48V-to-12V systems. The 324A pulsed ID rating provides ample margin for hot-swap inrush transients when parallel supplies are brought online. Compared to a Schottky diode OR-ing solution, the IRFH8201 reduces conduction loss by 60-80% at 20A load, eliminating heatsinking requirements. Place the part between the 12V rail and the load with a dedicated OR-ing controller (such as the LT4351 or hot-swap IC) driving the gate at 10V; use 4x 22uF ceramic bypass on each side of the FET to suppress switching transients.
推荐
DC-DC Synchronous Rectifier (Buck Converter Low-Side)
The IRFH8201TRPBF serves as the low-side synchronous rectifier in 12V-input buck converters delivering 20-50A to point-of-load rails. Its 56nC total gate charge at VGS=10V enables switching frequencies up to 500 kHz with reasonable driver losses, while the 7.33nF output capacitance keeps dead-time body-diode conduction short. StrongIRFET technology provides an excellent figure-of-merit (FOM = RDS(on) x Qg = 0.053 nC-mOhm), reducing switching loss compared to standard MOSFETs. In a typical 12V-to-1.2V/40A buck, expect 92-94% peak efficiency with this synchronous FET. Pair with a dedicated low-side gate driver and use Kelvin-source connection to the gate-driver ground for best switching performance.
推荐
Hot-Swap / In-Rush Current Limiting
The IRFH8201TRPBF's 324A pulsed drain current rating makes it well-suited as the pass-FET in 12V hot-swap controllers for server and networking line cards. During card insertion, the FET operates in linear mode with controlled VGS to limit inrush current to a safe value, then transitions to fully-enhanced operation once bulk capacitors charge. The 156W TC power dissipation rating provides short-term thermal headroom for the linear region, while the 25V VDS rating covers 12V rails with margin for transients. Combined with a hot-swap controller IC like the LTC4219 or ADM1177, the IRFH8201 supports 100A+ hot-plug events on a 12V backplane. Use a TVS clamp across drain-source for inductive kick protection during load disconnect events.
推荐
USB-PD and Notebook Adapter Output Switching
The IRFH8201TRPBF is well-suited for 20V USB-Power-Delivery and 19V notebook adapter output stages. With 25V VDS rating and 0.95 mOhm RDS(on), it handles the 20V/5A (100W) USB-PD Extended Power Range with very low conduction loss, typically under 0.5W at full load. The SuperSO8 5x6 package enables compact adapter designs, and the low gate charge (56nC) supports the multi-MHz switching frequencies common in modern PFC+LLC topologies. In e-mark cable applications, the IRFH8201 can serve as the VBUS switch on the device side. Place a 10uF X7R ceramic bypass at the drain pin and route the gate trace away from drain switching nodes to avoid capacitive coupling.
推荐
Battery Management Load Switch
The IRFH8201TRPBF works as the low-side load disconnect switch in 3-4S lithium-ion battery management systems. Its 1.35V maximum gate threshold ensures full enhancement at 3.0V VGS (logic-level compatible), while the 25V VDS rating covers 12V (3S) and 16.8V (4S) battery packs with margin for transient spikes. The 0.95 mOhm RDS(on) minimizes voltage drop during high-current discharge (50A+ continuous), preserving battery runtime. Pair with a battery gauge IC and protection FET for complete pack management. Note that for high-side switching, a P-channel variant would be preferred to avoid the bootstrap supply complexity.
推荐
Motor Drive Low-Side Switch (BLDC, Brushed DC)
The IRFH8201TRPBF serves as the low-side FET in 12-20V BLDC and brushed DC motor drivers up to 50A continuous. Its 0.95 mOhm RDS(on) minimizes conduction loss during PWM switching at 20-50 kHz, while the 56nC gate charge keeps driver losses manageable. The 25V VDS rating handles 24V nominal supplies with margin for regenerative braking transients clamped by a TVS or Zener diode. The SuperSO8 package's exposed pad provides adequate thermal dissipation for hobby and small-industrial motor control applications. Pair with a complementary high-side P-channel or N-channel (with bootstrap) FET and a gate driver like the IRS2302S for complete H-bridge or 3-phase inverter design.
推荐
推荐产品汇总
工程参考数据： IRFH8201TRPBF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IRFH7084TRPBF | IRFH8318TRPBF | BSC014N04LSATMA1 | NTMFS4934NT1G | SiRA52DP-T1-GE3 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay |
| Package | SuperSO8 5x6 (PQFN-8) | SuperSO8 5x6 (PQFN-8) - same | SuperSO8 5x6 (PQFN-8) - same | SuperSO8 5x6 (PQFN-8) - same | SO-8FL 5x6 - same | PowerPAK SO-8 5x6 - same |
| VDS max | 25 V | 40 V | 25 V | 40 V | 30 V | 30 V |
| RDS(on) max at VGS=10V | 0.95 mOhm | 0.95 mOhm | ~1.2 mOhm | 1.4 mOhm | 0.95 mOhm | 1.0 mOhm |
| Continuous ID at TC=25C | 100 A | 85 A | 95 A | 100 A | 90 A | 90 A |
| Technology | StrongIRFET trench | StrongIRFET trench | StrongIRFET trench | OptiMOS trench | onsemi trench | Vishay TrenchFET |
关键差异点
- Sub-milliohm RDS(on) with moderate gate charge for best-in-class FOM （对比 BSC014N04LSATMA1)
- Highest pulsed drain current rating in this voltage class （对比 NTMFS4934NT1G)
- Industry-standard StrongIRFET family with proven long-term availability （对比 SiRA52DP-T1-GE3)
设计说明
Estimated: at 30A continuous load and VGS=10V, the IRFH8201TRPBF dissipates P = I^2 x R = 30^2 x 0.00095 = 0.86W. With the SuperSO8 5x6 package's typical thermal resistance of approximately 50 C/W on a 25mm^2 2oz copper pour, junction temperature rise is ~43C above ambient, giving 93C junction at 50C ambient - well within the 150C maximum. For continuous operation above 40A, increase copper to at least 50mm^2 or add forced-air cooling. The exposed pad MUST be soldered to the PCB for rated thermal performance; dry solder joints will rapidly overheat the part.
Minimize gate-loop inductance by placing the gate driver within 5mm of pin 1 (Gate) and pin 4 (Source/Kelvin return). Use a 10-22 ohm gate resistor to dampen ringing. Keep the gate trace away from the drain switching node and avoid routing the gate trace parallel to high-dv/dt drain copper. For best switching performance, dedicate a copper pour to the source pad (pins 2/3/4) that ties back directly to the gate-driver ground, separate from the power-source return path - this is the classic Kelvin-source connection and reduces source-inductance-induced gate-drive ringing.
Do not exceed VGS of +/-20V absolute maximum; driving the gate above 12V provides diminishing RDS(on) reduction while increasing the risk of gate oxide failure. Do not rely on the 25V VDS rating for sustained 20V operation - derate to 80% (16V max) for reliable long-term operation, especially in OR-ing applications with load-dump transients. The 1.35V maximum gate threshold means the part may not fully enhance at VGS=2.5V (typical logic level); always drive the gate at >=4.5V and ideally 10V for the lowest RDS(on).
The SuperSO8 5x6 footprint requires thermal vias under the exposed pad for heat transfer to inner copper layers. Use a 4x4 array of 0.3mm-diameter vias on a 0.6mm pitch, plated and filled or tented to prevent solder wicking. Stitch multiple via rows for currents above 30A. Place input/output ceramic capacitors (10-22uF X7R) within 2mm of the drain and source pins to minimize parasitic inductance in switching applications.
合规信息
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications, choose an AEC-Q100-qualified Infineon StrongIRFET variant. Pb-free (PBF suffix in MPN).
