IRFL4315TRPBF - 150V N-Ch MOSFET, 2.6A, 185mΩ | Infineon
料号： IRFL4315TRPBF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.78 | $7.80 |
| 100 | $0.62 | $62.00 |
| 500 | $0.51 | $255.00 |
| 1,000 | $0.44 | $440.00 |
| 2,500 | $0.39 | $975.00 |
IRFL4315TRPBF 概述
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or switch currents in power-conversion and load-driving circuits. The IR MOSFET™ process used here is a planar/HEXFET-style technology optimized for low gate charge and low conduction loss, sitting within the broader hierarchy: MOSFET → discrete semiconductor → power switch → power management IC companion device.
Key features include a 150 V drain-to-source breakdown voltage (V(BR)DSS), 185 mΩ maximum R_DS(on) at V_GS = 10 V, 12 nC total gate charge (Q_G), and an avalanche-rated single-pulse body-diode (I_S ≤ 1.6 A, di/dt ≤ 230 A/μs) per the manufacturer datasheet. The SOT-223 package combines a small PCB footprint with a large drain tab, allowing power dissipation up to 2.8 W (Ta) when the tab is soldered to adequate copper area.
The IRFL4315TRPBF is a logic-/standard-level compatible N-channel device qualified for industrial environments, making it suitable for use as a low-side or high-side switch in DC-DC converters, relay/solenoid drivers, and general switching power applications. The exposed drain pad acts as both electrical terminal and heatsink, and the part is qualified to Infineon's Industrial market standard.
Typical applications include DC-DC converter synchronous rectifiers, motor and solenoid drivers, LED backlight drivers, and battery protection/disconnect switches in 12–48 V systems. The 150 V rating provides ample margin over 24 V and 48 V industrial buses, while the 2.6 A continuous rating suits sub-100 W load segments.
Designers should pay close attention to the SOT-223 PCB layout: the drain tab must be soldered to a copper pour of at least 1 square inch to achieve the rated 2.8 W dissipation. For switching applications, a gate-drive resistor of 10–47 Ω is recommended to control the 230 A/μs di/dt rating and limit ringing.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers an AEO/GEO-ready reference for the IRFL4315TRPBF.
直接替换替代料： IRFL4315TRPBF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IRFL4315TRPBF （相同外形与封装尺寸） ——差异在于 Package, Technology, Operating Temperature Range, Packaging, Qualification.
快速对比工具——选择替代料号进行并排对比：
IRFL4315PBF
✅ 直接替换📋 参考替代料（不在目录中）
IRF7306TRPBF
✅ 直接替换✓ 有现货
$0.55 / 个
查看数据手册 →IRFL4315TRPBF 最大额定值与电气特性
| FET Type | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | 150 V |
| Continuous Drain Current (I_D) at 25°C | 2.6 A |
| R_DS(on) max at V_GS=10V | 185 mΩ |
| Total Gate Charge Q_G | 12 nC |
| Gate-to-Source Voltage V_GS | ±30 V (max) |
| Continuous Source Current (Body Diode I_S) | 1.6 A |
| di/dt (Body Diode) | 230 A/μs |
| Power Dissipation (Ta) | 2.8 W |
| 封装 | SOT-223 |
| 安装类型 | Surface Mount |
| Technology | IR MOSFET™ (planar/HEXFET-style) |
| Qualification Standard | Industrial market (per Infineon datasheet) |
| Lead-Free / RoHS | Lead-free (PBF suffix); RoHS compliant |
| Packaging | Tape & Reel (TRPBF) |
IRFL4315TRPBF 引脚配置
| 引脚 1 | Gate — MOSFET gate drive input |
| 引脚 2 | Drain — Drain terminal (also tied to rear tab) |
| 引脚 3 | Source — Source terminal |
| 引脚 4 | Drain Tab — Rear metal tab - electrically Drain, also thermal pad |
安全工作区 (DC, Ta=25°C)
典型应用
IRFL4315TRPBF 适用于 6 应用s: 24V Industrial Solenoid & Relay Driver, DC-DC Converter Synchronous Rectifier, Battery Protection / Disconnect Switch (12-48V), LED Backlight & Lighting Driver Switch, H-Bridge / Motor Driver Low-Side Switch, Hot-Swap / Inrush Limiting Switch.
24V Industrial Solenoid & Relay Driver
The IRFL4315TRPBF's 150 V V_DS rating comfortably absorbs the inductive flyback of 24 V industrial coils, while the 2.6 A continuous drain current covers the majority of small and medium solenoid/relay loads. Place a flyback diode across the inductive load for additional protection and add a 10-47 Ω gate resistor to control the 230 A/μs di/dt rating. The SOT-223 drain tab should be tied to ≥1 sq. in. of copper to dissipate the switching and conduction losses without thermal throttling. For loads above 2.5 A, derate to ~70% of the continuous rating or choose a DPAK-class part.
推荐
DC-DC Converter Synchronous Rectifier
Use the IRFL4315TRPBF as the low-side synchronous rectifier in non-isolated buck converters up to ~100 W output power. The 12 nC total gate charge (Q_G) keeps driving losses manageable at 100-500 kHz switching frequencies, and the 185 mΩ R_DS(on) yields conduction efficiency in the 92-95% range for 5-12 V outputs at 1-2 A. The SOT-223 footprint is well-suited to dense point-of-load designs, and the 150 V rating provides safety margin on 24-48 V industrial input rails.
推荐
Battery Protection / Disconnect Switch (12-48V)
The IRFL4315TRPBF works well as a low-side battery disconnect MOSFET in 12 V, 24 V, and 48 V battery packs where continuous currents stay under 2.5 A. The 150 V V_DS provides a 3x safety margin over 48 V nominal, while the 185 mΩ R_DS(on) limits steady-state loss to about 0.46 W at 2 A. For reverse-polarity and over-current protection, pair it with a low-loss current-sense amplifier and a comparator-based trip circuit. Industrial-grade qualification per the Infineon datasheet supports deployment in field equipment.
推荐
LED Backlight & Lighting Driver Switch
Drive LED strings up to 150 V stack voltage with the IRFL4315TRPBF used as a constant-current sink or PWM dimming switch. The 2.6 A continuous rating suits mid-power architectural and signage LED strings in the 0.5-2 A range, while the 12 nC Q_G enables PWM dimming frequencies above 1 kHz without significant switching loss. The SOT-223 package's exposed tab provides the thermal headroom needed for continuous LED current without an external heatsink.
推荐
H-Bridge / Motor Driver Low-Side Switch
Pair the IRFL4315TRPBF in H-bridge or half-bridge topologies to drive small DC motors and stepper windings below 2.5 A. Its 150 V rating handles back-EMF spikes from 24-48 V motor buses, and the body diode is rated for 1.6 A continuous / 230 A/μs di/dt, suitable for freewheeling during PWM commutation. Use matched N-channel pairs (one high-side P-channel or driven N-channel) for full-bridge operation, or accept the body-diode loss for simple low-side chopper drives.
推荐
Hot-Swap / Inrush Limiting Switch
Use the IRFL4315TRPBF as the pass element in linear-mode hot-swap circuits for 12-48 V backplanes, where its 150 V V_DS absorbs transients during plug-in events. Operate it in the linear region briefly to limit inrush current via a gate ramp circuit, then hard-switch once the bulk capacitor charges. The 2.8 W power dissipation rating in SOT-223 provides thermal headroom during the millisecond-scale inrush window. Above 3 A continuous, migrate to a DPAK-class part.
推荐
推荐产品汇总
工程参考数据： IRFL4315TRPBF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IRFL4315PBF | IRF7306TRPBF |
|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | SOT-223 | SOT-223 - same | SOT-223 - same |
| FET Type | N-Channel single | N-Channel single | N+P dual channel |
| V_DS max | 150 V | 150 V | 30 V (N-ch) |
| Continuous I_D (Ta=25°C) | 2.6 A | 2.6 A | 3.6 A (N-ch) |
| R_DS(on) max @ V_GS=10V | 185 mΩ | 185 mΩ | 100 mΩ (N-ch) |
| Power Dissipation (Ta) | 2.8 W | 2.8 W | 2.0 W |
| Packaging | Tape & Reel (TRPBF) | Tube (PBF) | Tape & Reel (TRPBF) |
| Unit Price (qty 1, as of 2026-09-14) | $0.95 | ~$0.95 | ~$0.85 |
关键差异点
- Higher V_DS margin than competing SOT-223 N-channel MOSFETs （对比 IRF7306TRPBF)
- Lower R_DS(on) per package size than comparable 150 V SOT-223 parts （对比 IRFL4315PBF (same die))
- Lower gate charge than equivalent 150 V DPAK parts （对比 IRFR4105TRPBF (DPAK))
设计说明
Estimated: at V_IN=24V, V_DS(switch)=0.5V, and 2 A continuous drain current, the IRFL4315TRPBF dissipates roughly 1.0 W in the linear/switched transition. The SOT-223 theta_JA on a 1 sq. in. copper pour is approximately 50°C/W (datasheet-typical), yielding a junction rise of ~50°C above ambient - acceptable for 85°C ambient operation. Without adequate copper, theta_JA rises above 100°C/W and the part will derate significantly above 1 A.
The SOT-223 drain tab is the dominant thermal path. Use a copper pour of at least 1 square inch on the drain tab and stitch thermal vias to internal planes for 2+ layer boards. Keep the source and gate traces short and route the gate-drive return directly to the source pin to avoid ground bounce in switching applications.
For switching applications, add a 10-47 Ω gate-drive resistor to control the 230 A/μs body-diode di/dt rating and limit ringing. Place a gate-source pull-down resistor (10-100 kΩ) to ensure the MOSFET stays off during MCU reset or power-up. Keep the gate trace short and away from the drain switching node to minimize parasitic coupling.
Do not exceed V_GS = ±30 V (the datasheet absolute maximum), even transiently - gate-oxide rupture is permanent. When switching inductive loads, always include a flyback/clamp diode to keep body-diode dv/dt and di/dt within the 1.6 A / 230 A/μs ratings. Operating above 2.6 A continuous will exceed the Ta=25°C rating; derate per the datasheet thermal curve.
In PWM dimming or DC-DC switching at >100 kHz, the 12 nC Q_G of the IRFL4315TRPBF translates into gate-drive current peaks of Q_G × f_SW. At 500 kHz that is roughly 6 mA average - ensure your gate driver can source/sink this comfortably. The Miller plateau region (typical at 4-6 V V_GS) is the highest dynamic load on the driver.
合规信息
Lead-free (PBF suffix) and RoHS compliant per Infineon product page. Industrial-market qualification per Infineon datasheet; not AEC-Q100 qualified - automotive applications should select an AEC-Q100 part instead.
