IRFU9024NPBF - -55V P-Ch HEXFET 11A 175mOhm TO-251 | Infineon
料号： IRFU9024NPBF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.78 | $0.78 |
| 10 | $0.71 | $7.10 |
| 100 | $0.62 | $62.00 |
| 500 | $0.54 | $270.00 |
| 1,000 | $0.46 | $460.00 |
IRFU9024NPBF 概述
A P-channel MOSFET is a type of metal-oxide-semiconductor field-effect transistor in which the channel is doped to conduct when a negative gate-to-source voltage is applied relative to an N-type substrate. In the broader taxonomy, it sits within discrete semiconductors -> transistors -> MOSFETs -> P-channel enhancement-mode power MOSFETs. The P-channel topology is particularly useful in high-side switching where a low-side N-channel would require a charge pump or bootstrap driver, simplifying gate-drive circuitry in battery-powered and load-switch applications.
Key specifications include a continuous drain current of 11 A at Tc, pulsed drain current capability up to 44 A, a maximum drain-to-source on-resistance of 175 mOhm at VGS = -10 V, and a gate threshold voltage of 4 V maximum. The device is fully avalanche-rated, supports dynamic dv/dt, and offers fast switching speeds. The IPAK (TO-251AA) package provides a thermal resistance that allows operation up to 175C junction temperature.
The fifth-generation HEXFET technology employs advanced processing techniques to minimize RDS(on) per silicon area, reducing both conduction losses and package footprint. Its fast intrinsic body diode and optimized FOM (RDS(on) x Qg) make it suitable for synchronous rectifier replacements, low-side switches in half-bridges, and DC load management circuits where reverse-polarity protection or active high-side control is required.
Typical applications include battery protection and reverse-polarity blocking in 12 V / 24 V automotive systems, DC motor drivers for small pumps and fans, power-ORing circuits, hot-swap controllers, and high-side load switches in industrial PLCs. The P-channel structure eliminates the need for a high-side bootstrap supply, simplifying gate-drive design.
When designing with this device, ensure that VGS does not exceed the +/- 20 V absolute maximum, and select a gate resistor to limit ringing below the dv/dt rating. For switching frequencies above 100 kHz, the 12.7 nC Qg and 175 mOhm RDS(on) FOM indicates the part balances conduction and switching losses efficiently.
This page synthesizes distributor pricing, drop-in alternatives in the IPAK footprint, and practical design notes that complement the Infineon datasheet without duplicating it.
直接替换替代料： IRFU9024NPBF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IRFU9024NPBF （相同外形与封装尺寸） ——差异在于 Package.
快速对比工具——选择替代料号进行并排对比：
IRFU9024N
✅ 直接替换📋 参考替代料（不在目录中）
IRFU9024NPBF 最大额定值与电气特性
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -11 A |
| Pulsed Drain Current (IDM) | -44 A |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 175 mOhm max |
| Gate-Source Threshold Voltage (VGS(th)) | -4 V max |
| Total Gate Charge (Qg) | 12.7 nC |
| Input Capacitance (Ciss) | 170 pF |
| Output Capacitance (Coss) | 92 pF |
| Reverse Transfer Capacitance (Crss) | 350 pF |
| Power Dissipation (PD) at Tc=25C | 38 W |
| 工作结温 | -55C to +175C |
| 封装 | IPAK (TO-251AA) Through-Hole |
| 安装类型 | Through Hole |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant |
| Avalanche Rated | Yes |
| Generation | Fifth-Generation HEXFET |
IRFU9024NPBF 引脚配置
| 引脚 1 | Gate — MOSFET gate input; drive from 0V (on) to -10V (off, with pull-up to source) |
| 引脚 2 | Drain — MOSFET drain; electrically connected to the metal tab on the back of the package |
| 引脚 3 | Source — MOSFET source; for P-channel, this is the more-positive terminal |
安全工作区 (DC)
典型应用
IRFU9024NPBF 适用于 6 应用s: Automotive Reverse-Polarity Protection, High-Side Load Switch, DC Motor Drive (Low-Power), Battery Protection / Power Path Management, Power OR-ing / Redundant Supply, Hot-Swap / Inrush Limiting.
Automotive Reverse-Polarity Protection
The IRFU9024NPBF suits 12 V / 24 V automotive reverse-polarity protection circuits where its P-channel topology eliminates the need for a high-side charge pump. Source-to-battery reverse polarity blocking requires only a pull-up to ground at the gate; the -55 V VDS rating provides 2x headroom over a 24 V load-dump transient. The 175 mOhm RDS(on) at VGS=-10V limits continuous conduction loss to roughly 1.9 W at 11 A - acceptable for body-electronics loads below 8 A continuous. The fully avalanche-rated body diode absorbs inductive kickback from motors and solenoids, increasing ruggedness. Designers should add a TVS clamp at the drain for ISO 7637-2 pulse compliance and a 10 kOhm gate-source resistor to prevent false turn-on during cold-crank.
推荐
High-Side Load Switch
For industrial PLC and home-automation high-side load switches, the IRFU9024NPBF drives resistive and inductive loads up to 11 A continuous without a bootstrap supply. Its P-channel gate is referenced to ground, so a single logic-level GPIO (with a level shifter) can pull the gate to 0 V to turn the FET on, while a pull-up resistor to the source turns it off. The 12.7 nC Qg enables sub-microsecond switching at modest gate-drive currents. The IPAK through-hole package suits hand-soldered prototypes and field-replaceable modules. Designers should add a gate-source Zener clamp (10 V) to protect against VGS transients during hot-plug events, and use a 100 Ohm gate resistor to limit ringing on long PCB traces.
推荐
DC Motor Drive (Low-Power)
The IRFU9024NPBF drives small brushed DC motors, fans, and pumps in the 5 A to 11 A range from a 12 V or 24 V supply. The P-channel half-bridge topology allows a single-supply gate drive without level shifting, simplifying H-bridge designs. The 175 mOhm RDS(on) keeps conduction loss under 2 W at 10 A, and the avalanche-rated body diode clamps inductive kickback at motor turn-off, eliminating the need for an external flyback diode in many applications. The 38 W power dissipation rating supports continuous motor current up to 11 A with adequate heatsinking. Recommended gate resistor is 10-47 Ohm for switching frequencies in the 1-25 kHz PWM range, balancing EMI and switching loss.
推荐
Battery Protection / Power Path Management
In battery packs and UPS systems, the IRFU9024NPBF serves as a high-side disconnect switch between the battery stack and the load. Its P-channel configuration connects source to the battery positive and drain to the load, allowing ground-referenced gate control via a single MOSFET or BJT driver. The -55 V VDS handles multi-cell lithium packs up to 12S (50.4 V nominal) with margin. The 175 mOhm RDS(on) at full gate drive dissipates only 1.9 W at 11 A - a fraction of the load power - keeping efficiency above 99%. Designers should add an NTC thermistor to the heatsink and a gate clamp Zener (15 V) for redundant VGS protection during fault conditions.
推荐
Power OR-ing / Redundant Supply
The IRFU9024NPBF implements low-loss OR-ing between redundant 12 V or 24 V power supplies. Its body diode carries the load during bring-up, and once the higher-voltage rail dominates, the P-channel MOSFET is biased on to bypass the diode drop - reducing dissipation by 0.4-0.7 V per FET versus Schottky diodes. At 11 A this saves up to 7 W per rail. Two IRFU9024NPBFs can be placed source-to-source to OR two supplies sharing a common ground, with gate-source resistors tied to the lower of the two rails for automatic switchover. Use a small RC snubber (100 Ohm + 100 nF) across drain-source to suppress oscillation during fast current commutation.
推荐
Hot-Swap / Inrush Limiting
For -48 V telecom or 24 V industrial hot-swap applications, the IRFU9024NPBF is placed in the high-side return path (P-channel to ground) to limit inrush current into bulk capacitors. Gate is initially held off by a soft-start RC network; as the cap charges, the gate ramps up to full enhancement, limiting di/dt. The -55 V VDS handles -48 V buses with margin for transient ringing, and the 175 mOhm RDS(on) keeps steady-state conduction loss under 1.5 W at 9 A. The fully avalanche-rated body diode absorbs back-EMF from the load during hot-unplug. Pair with a hot-swap controller IC for current-limit and fault-timer functions; add a TVS at the drain for transient suppression.
推荐
推荐产品汇总
工程参考数据： IRFU9024NPBF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IRFU9024N | IRFR9024NPBF |
|---|---|---|---|
| Package | IPAK (TO-251AA) | IPAK (TO-251AA) - same | D-PAK (TO-252) - different footprint |
| Brand | Infineon (formerly International Rectifier) | Infineon | Infineon |
| Polarity | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -55 V | -55 V |
| Continuous Drain Current (ID) | -11 A (Tc=25C) | -11 A (Tc=25C) | -11 A (Tc=25C) |
| RDS(on) at VGS=-10V | 175 mOhm max | 175 mOhm max | 175 mOhm max |
| Total Gate Charge (Qg) | 12.7 nC | 12.7 nC | 12.7 nC |
| Lead Finish | Pb-free (PBF suffix) | SnPb (non-RoHS, no PBF suffix) | Pb-free (PBF suffix) |
| RoHS Compliance | Compliant | Non-compliant (SnPb lead finish) | Compliant |
关键差异点
- Original Infineon HEXFET silicon (now Infineon-owned IP) （对比 Generic -55V P-channel MOSFETs)
- Pb-free (RoHS) compliant - drop-in for SnPb IRFU9024N （对比 IRFU9024N (non-Pb-free))
- Through-hole IPAK package simplifies hand assembly and field repair （对比 IRFR9024NPBF (D-PAK SMD))
设计说明
Estimated: at Tc=25C the IRFU9024NPBF dissipates up to 38 W with a junction-to-case thermal resistance of approximately 1.5 C/W (per the TO-251AA package family). At 11 A continuous with RDS(on)=175 mOhm, conduction loss alone is P = I^2 x R = 21.2 W (worst case at TJ=175C where RDS doubles). A small clip-on heatsink or 100 cm^2 of copper pour on a single-side PCB is required for continuous operation above 5 A. Without a heatsink, derate ID to roughly 3 A continuous in free air at 25C ambient to keep TJ below 125C.
The IPAK (TO-251AA) tab is electrically tied to the drain - it cannot be used as a heatsink if the drain trace is not at the same potential as the heatsink. For P-channel high-side switches, the tab will sit at the load voltage (often the battery positive), so a mica insulator or thermal pad with isolated mounting is needed if a chassis-mounted heatsink is used. Reserve at least 5 mm clearance around the tab for high-voltage spacing (per IPC-2221 for voltages up to 100 V). Through-hole lead bending should use a support tool to avoid cracking the IPAK mold compound.
Three common pitfalls with P-channel MOSFETs: (1) Forgetting that VGS must go negative relative to source to turn the FET on - applying 0V with source pulled up to 12V still gives VGS=+12V (off state). (2) Exceeding the +/- 20 V VGS absolute maximum during gate transient ringing - add a 10-15 V Zener from gate to source. (3) Computing continuous current from the 25C Tc rating only - the ID vs Tc curve derates rapidly; at 100C case the current drops to roughly 60% of the 25C value.
Place a 100 Ohm gate resistor as close to the gate pin as possible to damp LC ringing from the gate-source capacitance and PCB trace inductance. For switching frequencies above 50 kHz, route the gate trace away from the drain trace to minimize capacitive coupling that can cause dv/dt-induced turn-on. Keep the source-return trace short and wide to minimize common-source inductance, which otherwise creates a negative feedback voltage during switching and slows turn-off. Reference: Infineon application note AN-936 for P-channel MOSFET PCB layout guidelines.
合规信息
RoHS compliant per the 'PBF' (Pb-free) suffix and Infineon product page. AEC-Q100 qualification status not stated in the verified web data - assumed not_applicable for this through-hole power MOSFET. Halogen-free status not stated in the verified web data - set to unknown.
