IRF9540NPBF - P-Ch 100V 23A 117mOhm HEXFET MOSFET | Infineon
MPN: IRF9540NPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.49 | $1.49 |
| 10 | $1.34 | $13.40 |
| 100 | $1.12 | $112.00 |
| 500 | $0.96 | $480.00 |
| 1,000 | $0.86 | $860.00 |
Drop-in alternatives for IRF9540NPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IRF9540NPBF
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IRF9530NPBF
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✅ Drop-In✓ In Stock
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IXTP90P10T
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IRF9540NPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF9540NPBF |
| Transistor Type | P-Channel MOSFET (HEXFET Power MOSFET) |
| Drain-to-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (ID) at Tc | -23 A |
| Gate-to-Source Voltage (VGS) max | +/-20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 117 mOhm |
| Total Gate Charge (Qg) | 64.7 nC |
| Power Dissipation (PD) at Tc=25C | 140 W |
| Operating Junction Temperature Range | -55 C to +175 C |
| Package / Case | TO-220AB (through-hole, 3 pins + tab) |
| Mounting Type | Through Hole |
| Process Technology | Planar HEXFET cell structure |
| Qualification | JEDEC standard |
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-free matte tin plating) |
IRF9540NPBF Pin Configuration
| Pin 1 | Gate — MOSFET gate (drive to source for enhancement) |
| Pin 2 | Drain — MOSFET drain (electrically tied to the metal tab/back) |
| Pin 3 | Source — MOSFET source (reference for gate drive) |
Safe Operating Area (DC) - per Infineon IRF9540N datasheet
Typical Applications
IRF9540NPBF is suitable for 6 applications: High-Side Load Switch (Industrial 24V / 48V Bus), Battery Reverse-Polarity and Over-Discharge Protection, DC Motor H-Bridge High-Side Switch, Linear-Mode High-Side Current Regulator, Power Supply OR-ing and Hot-Swap Controller, Audio Amplifier Output Stage / Switch.
High-Side Load Switch (Industrial 24V / 48V Bus)
The IRF9540NPBF is well suited to high-side switching on industrial 24V and 48V buses because its -100V VDS rating provides 2x or more headroom above the worst-case transient bus voltage, and its P-channel polarity lets the load be switched by pulling the gate to ground through a small-signal driver - eliminating the bootstrap or charge-pump required by an equivalent N-channel part. The 117 mOhm RDS(on) keeps conduction loss at ~5W when carrying 10A continuously, and the 140W PD rating with a modest TO-220 heatsink absorbs the dissipation comfortably. Place a 10k gate-source resistor across gate-to-source to keep the device off during controller power-up before the gate driver is active. This pattern is used in PLC output modules, industrial sensor power rails, and factory automation I/O blocks.
Recommended
Battery Reverse-Polarity and Over-Discharge Protection
A common use for the IRF9540NPBF is as the main P-channel pass element in battery protection circuits for multi-cell lithium packs and 24V/36V industrial battery systems. Its -100V VDS easily tolerates the open-circuit voltage of a 7S Li-ion pack (~29.4V) plus inductive transients, and the planar HEXFET cell structure delivers a wide SOA - critical when the MOSFET must absorb simultaneous high VDS and high ID during a short-circuit or reverse-polarity condition. The 117 mOhm RDS(on) keeps the voltage drop and conduction loss acceptable for continuous 10-20A loads. Pair it with a low-side N-channel or a dedicated battery monitor IC that controls the gate to switch off during over-discharge, over-current, or reversed input.
Recommended
DC Motor H-Bridge High-Side Switch
In a complementary H-bridge or half-bridge DC motor driver, the IRF9540NPBF serves as the high-side P-channel switch on each leg, paired with an N-channel low-side such as the IRF540N. Because both halves share the same 100V VDS, similar on-resistance class, and the same TO-220AB footprint, the thermal and electrical behavior of the bridge legs is matched - simplifying heatsinking and gate-drive timing. The 23A continuous rating covers most sub-1HP brushed DC motors (golf carts, small pumps, robotics actuators). Switching below 100kHz is well within the planar HEXFET process limits, and the 64.7nC total gate charge is small enough that a small gate driver can switch the leg at 20kHz PWM without excessive driver loss.
Recommended
Linear-Mode High-Side Current Regulator
When used as a linear pass element (in saturation/linear region rather than fully switched), the IRF9540NPBF can regulate current through a load such as an LED string, a heater, or a constant-current source. Its wide SOA from the planar cell structure is the key advantage here, because linear mode operation simultaneously imposes high VDS and high ID - the worst-case thermal stress. With a small gate-source bias network and an op-amp feedback loop, the IRF9540NPBF can serve as the pass element of an adjustable high-side current source up to several amps. Always verify the SOA curve at your specific (VDS, ID, duty cycle) operating point before committing; the datasheet SOA graphs must be consulted for the steady-state DC envelope.
Recommended
Power Supply OR-ing and Hot-Swap Controller
The IRF9540NPBF can be used as the OR-ing switch in redundant power supply topologies (N+1 redundant DC bus) and as the main switching element in a hot-swap controller. Its -100V rating covers 48V telecom bus rails with substantial transient headroom, and the P-channel polarity simplifies the high-side disconnect - no bootstrap or charge pump required. The 117mOhm RDS(on) keeps voltage drop at ~1V at 10A, which is acceptable for most 48V rails. In a hot-swap application, the wide SOA tolerates the inrush current spike at VBUS charge-up, and the planar cell structure provides well-behaved thermal performance during the brief SOA excursion.
Recommended
Audio Amplifier Output Stage / Switch
Although not its primary market, the IRF9540NPBF is occasionally used as a high-side mute or protection switch in audio amplifier output stages, where its linear-region capability and P-channel polarity simplify the mute-control logic. The TO-220 package supports a chassis-mount heatsink when the amplifier is delivering continuous high power. For lower-noise audio applications, modern audio MOSFETs with matched complementary pairs are usually preferred, but the IRF9540NPBF remains a serviceable choice in legacy designs and DIY amplifier projects where its universal availability and proven ruggedness outweigh the need for matched gm curves.
Recommended
Recommended Products Summary
Engineering reference data for IRF9540NPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF9540N | IRF9530NPBF | SiHF9540-E3 | IXTP90P10T |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay | IXYS |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) - same | TO-220AB (through-hole) - same | TO-220AB (through-hole) - same | TO-220AB (through-hole) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-to-Source Voltage (VDS) | -100 V | -100 V | -100 V | -100 V | -100 V |
| Continuous Drain Current (ID at Tc=25C) | -23 A | -23 A | -12 A (-48%) | -23 A | -23 A |
| RDS(on) max at VGS=-10V | 117 mOhm | 117 mOhm | 200 mOhm | 117 mOhm | 120 mOhm |
| Total Gate Charge (Qg) | 64.7 nC | 64.7 nC | 61 nC | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (PD at Tc=25C) | 140 W | 140 W | 88 W | 140 W | 125 W |
| RoHS / Lead-Free | Yes (Pb-free, RoHS) | No (lead-bearing legacy) | Yes (Pb-free, RoHS) | Yes (Pb-free, RoHS) | Yes (Pb-free, RoHS) |
| Unit Price (1-pc, as of 2026-09-14) | $1.49 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- P-channel polarity enables ground-referenced gate drive (vs IRF540N (N-channel))
- Wide SOA from planar HEXFET cell structure (vs IRF9530NPBF (P-channel, same VDS, lower current))
- Universal TO-220AB footprint with broad cross-brand sourcing (vs SiHF9540-E3 (Vishay cross-reference))
Design Notes
Estimated: at PD = 140 W the case temperature must stay below 175 C. With TO-220AB theta_JC of approximately 1.0 C/W, the silicon-to-case rise is 140 C at full power, so a heatsink rated at (175C - 25C - 140C) / 140W = ~0.07 C/W is needed. Realistically a small clip-on heatsink (1-2 C/W) plus some airflow keeps Tj below 125 C at continuous 30-50 W dissipation. Always use thermal interface material (thermal pad or paste) and tighten the mounting screw to spec - dry-joint thermal resistance can double the junction temperature.
Gate drive traces should be kept short (under 20 mm) to minimize parasitic inductance that can ring above VGS(max) = +/-20 V during fast switching. Place a 10 kOhm gate-source resistor directly across the gate and source pins (physically adjacent to the TO-220 pins, not at the driver end) to keep the device off during controller power-up. The drain tab is electrically tied to the drain pin, so when the drain sits at a non-ground potential, isolate the heatsink with a mica or silicone pad plus a nylon shoulder washer on the mounting screw.
Three recurring mistakes with the IRF9540NPBF: (1) Driving the gate with only a microcontroller GPIO (3.3 V or 5 V) - the device needs at least -10 V VGS for full enhancement; use a gate driver or discrete level shifter. (2) Forgetting the P-channel body diode conduction path when used in an H-bridge - always consider the body diode during dead-time analysis. (3) Driving the gate beyond -20 V VGS during transient ringing - this ruptures the gate oxide and is the most common failure mode for HEXFETs; add a 12 V Zener from gate to source as a clamp.
For a TO-220AB through-hole part, use a pad pattern that gives at least 2 mm of annular ring around each pin hole and a large copper pour on the drain tab pad (if the tab is grounded). The drain tab footprint should match the TO-220AB JEDEC standard pad pitch (2.54 mm pin pitch, 3.81 mm tab center) to ensure mechanical compatibility with off-the-shelf heatsink clips. For high-current paths (above 10 A), use 2 oz copper on the drain and source PCB traces, or stitch multiple vias to inner-layer planes.
Compliance Information
Pb-free matte-tin plating per 'PBF' suffix; RoHS compliant per Infineon product page; not AEC-Q100 qualified (standard part, not automotive grade); JEDEC-qualified silicon per Infineon datasheet.
