IRLHS6242TRPBF - 20V N-CH HEXFET MOSFET, 11.7mΩ | Infineon
料号： IRLHS6242TRPBF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.18 | $0.18 |
| 10 | $0.17 | $1.70 |
| 100 | $0.155 | $15.50 |
| 500 | $0.14 | $70.00 |
| 1,000 | $0.13 | $130.00 |
| 3,000 | $0.115 | $345.00 |
IRLHS6242TRPBF 概述
A HEXFET power MOSFET is a specific Infineon/International Rectifier family of N-channel enhancement-mode MOSFETs built on a proprietary trench-gate silicon process that minimizes conduction losses and gate charge simultaneously. Within the broader semiconductor taxonomy, a HEXFET belongs to the power MOSFET class, which itself sits under discrete semiconductors and ultimately under power management. The IRLHS6242 specifically targets applications requiring the absolute smallest footprint with true logic-level drive, which historically forced designers into less efficient 8- or 6-ball BGA DFN parts from other vendors.
Key features include a 14 nC total gate charge, ±12V VGS rating, and qualification to JEDEC standards for the broadest possible distribution-channel compatibility. The exposed pad (EP) on the underside of the PQFN package provides a low thermal-resistance path directly into the PCB copper pours, enabling 1.98W dissipation in free air and 9.6W with case-controlled cooling. This makes the device appropriate for compact synchronous buck converters, USB Type-C power path switches, and DC motor inverters under 12V.
The device architecture pairs a small die with a high-performance leadframe and bottom-exposed thermal pad; combined with the low gate charge, this allows switching frequencies in the MHz range without excessive driver losses. The 2.5V-capable gate threshold unlocks direct drive from modern microcontrollers without a separate gate-driver IC, simplifying the BOM for low-voltage, low-power rails.
Typical applications include battery charging and discharging switches, system load switches in mobile and wearable devices, low-voltage DC motor drivers, and high-frequency buck/boost converter synchronous rectifiers. According to the manufacturer description, the part is also designed for inverter stages below 20V. Designers should keep gate-drive traces short and provide adequate PCB copper under the exposed pad for thermal relief; for high-current loads, multiple thermal vias into an internal copper plane are recommended.
直接替换替代料： IRLHS6242TRPBF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IRLHS6242TRPBF （相同外形与封装尺寸） ——差异在于 Package, Technology, MSL Level, Gate Drive Level, Manufacturer.
快速对比工具——选择替代料号进行并排对比：
IRLML6246TRPBF
✅ 直接替换✓ 有现货
$0.11 / 个
查看数据手册 →IRLML6346TRPBF
✅ 直接替换✓ 有现货
$0.18 / 个
查看数据手册 →IRLML2803TRPBF
✅ 直接替换✓ 有现货
$0.13 / 个
查看数据手册 →IRLML6344TRPBF
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
NTTFS5820NLTAG
✅ 直接替换📋 参考替代料（不在目录中）
IRLHS6242TRPBF 最大额定值与电气特性
| FET Type | N-Channel |
| Technology | HEXFET (trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 20 V |
| Gate-to-Source Voltage (VGS) | ±12 V |
| Continuous Drain Current (TA) | 10 A |
| Continuous Drain Current (TC) | 12 A |
| On-Resistance RDS(on) max @ VGS=4.5V | 11.7 mΩ |
| Total Gate Charge (Qg) | 14 nC |
| Power Dissipation (TA) | 1.98 W |
| Power Dissipation (TC) | 9.6 W |
| 封装 | 6-PQFN (2x2) / DFN2020 with exposed pad |
| 安装类型 | Surface Mount |
| 工作温度 | -55°C to +150°C |
| Gate Drive Level | Logic-level (4.5V); 2.5V-capable |
| Qualification | JEDEC standard |
IRLHS6242TRPBF 引脚配置
| 引脚 1 | G — Gate |
| 引脚 2 | S — Source |
| 引脚 3 | D2 — Drain (sub-die) |
| 引脚 4 | S — Source |
| 引脚 5 | D1 — Drain (sub-die) |
| 引脚 6 | D — Drain |
安全工作区 (estimated from datasheet thermal limits)
典型应用
IRLHS6242TRPBF 适用于 6 应用s: Battery Charging / Discharging Switch, System / Load Switch, Low-Voltage DC Motor Driver, Synchronous Buck Converter (Sub-20V POL), USB Type-C / Power Path Switch, IoT and Wearable Power Management.
Battery Charging / Discharging Switch
The IRLHS6242TRPBF is well-matched to battery charge and discharge path switching in single-cell lithium-ion packs, where the 20V VDS rating exceeds the maximum pack voltage plus transient margin. With 11.7 mΩ RDS(on) at 4.5V gate drive, conduction loss at 3A is roughly 100 mW, which keeps thermal rise minimal in sealed packs. Compared with mechanical relays, the 14 nC gate charge enables sub-microsecond switching for low-loss synchronous rectification in switching chargers.
推荐
System / Load Switch
The IRLHS6242TRPBF is a strong fit for system load switches in mobile and wearable devices, where the device sits between the battery rail and downstream circuitry to cut leakage when subsystems are off. The 2.5V-capable gate threshold allows direct GPIO control from low-voltage microcontrollers without a dedicated gate-driver IC, simplifying the BOM. In free air at TA=25°C the part dissipates up to 1.98W, which is more than adequate for typical 1-2A load-switch duty cycles.
推荐
Low-Voltage DC Motor Driver
The IRLHS6242TRPBF suits H-bridge low-side and high-side positions in sub-20V brushed DC motor drivers for toys, robotics, and small appliances. Its 10A continuous drain current handles inrush during motor startup, while the 11.7 mΩ RDS(on) minimizes voltage drop across the switch so motor torque is preserved. The 6-PQFN footprint allows compact dual-MOSFET H-bridge layouts on a single-side PCB, reducing total BOM cost.
推荐
Synchronous Buck Converter (Sub-20V POL)
The IRLHS6242TRPBF can serve as the low-side synchronous rectifier in sub-20V buck converters that step down 5V or 12V rails for SoCs, FPGAs, or memory. The 14 nC total gate charge keeps switching losses low at 500 kHz-1 MHz switching frequencies, while the 11.7 mΩ RDS(on) maintains high efficiency at moderate to high load current. Compared with a Schottky diode replacement, the synchronous FET design recovers the diode forward-voltage drop as usable efficiency.
推荐
USB Type-C / Power Path Switch
The IRLHS6242TRPBF is well-suited to USB Type-C VBUS power-path switching at 5V/3A levels. Its 20V VDS gives ample margin against USB-PD voltage transients, and its 11.7 mΩ RDS(on) limits conduction loss to about 0.1W at 3A, which is acceptable without a heatsink. The 14 nC gate charge supports fast source/sink role-swap transitions mandated by USB Type-C, while the small 2x2 PQFN footprint keeps PCB real-estate low.
推荐
IoT and Wearable Power Management
The IRLHS6242TRPBF integrates well into IoT sensor nodes and wearable power-management circuits where every square millimeter of PCB counts. Its 2x2 PQFN footprint is among the smallest discrete-MOSFET packages available, while its logic-level gate drive removes the need for a charge pump or gate-driver IC. Quiescent current is dominated by the gate-driver leakage path during off-state, which the part minimizes thanks to Infineon's optimized trench-gate process.
推荐
推荐产品汇总
工程参考数据： IRLHS6242TRPBF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IRLML6246TRPBF | IRLML6346TRPBF | IRLML2803TRPBF | NTTFS5820NLTAG |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | 6-PQFN (2x2) / DFN2020 | 6-PQFN (2x2) - same | 6-PQFN (2x2) - same | 6-PQFN (2x2) - same | 6-PQFN (2x2) - same |
| VDS (V) | 20 | 20 | 30 | 30 | 60 |
| Continuous Drain Current (A, TA) | 10 | 4 | 3.6 | 5.5 | 6.3 |
| RDS(on) max @ VGS=4.5V (mΩ) | 11.7 | ~63 | ~34 | ~46 | ~38 |
| Total Gate Charge (nC) | 14 | 6 | 8.2 | 11 | 9 |
| Gate Drive Level (V) | Logic 4.5V (2.5V capable) | Logic 4.5V | Logic 4.5V | Logic 4.5V | Logic 4.5V |
| Power Dissipation TA (W) | 1.98 | 1.3 | 1.25 | 1.25 | 2.1 |
| Approx. Price @ 1000 (USD, as of 2026-09-10) | 0.13 | 0.10 | 0.12 | 0.10 | 0.18 |
关键差异点
- Best-in-class combination of high current and 2x2 PQFN footprint （对比 IRLML6246TRPBF)
- Lower on-resistance at 4.5V gate drive （对比 IRLML6346TRPBF)
- Cross-brand footprint compatibility for second sourcing （对比 NTTFS5820NLTAG (onsemi))
设计说明
Estimated: at 10A continuous with VGS=4.5V and TA=25°C, conduction loss is I² × RDS(on) = 100 × 0.0117 = 1.17W. The exposed-pad PQFN package dissipates 1.98W in free air (TA=25°C), so this load is within rating but junction temperature will rise substantially. Place a copper pour covering at least 100 mm² directly under the exposed pad and stitch it to internal copper planes with a thermal via array (≥4 vias, 0.3mm diameter) to keep theta_JA low. For sustained 10A operation, forced airflow is recommended.
Estimated: with the 6-PQFN 2x2 footprint, the recommended land pattern per the manufacturer datasheet is non-symmetric to maximize copper under the drain pins (3, 5, 6) and the exposed pad. Place input/output capacitors and the gate-drive resistor within 2-3 mm of the package to minimize parasitic inductance. Use 1 oz copper minimum on the top layer; for high-current designs use 2 oz copper plus parallel-plated vias under the exposed pad.
Do not exceed ±12V on the gate (VGS rating); static discharge from a fingertip can destroy the thin gate oxide. Always include a 10 kΩ gate-source pull-down resistor to hold the device off during MCU reset or power-up. Also note that the logic-level threshold at 2.5V works for steady-on states but does not provide noise margin at high dV/dt — for noisy environments use 4.5V gate drive whenever possible.
合规信息
RoHS and REACH compliance per Infineon product page. Lead-free reflow compatible. JEDEC-qualified per manufacturer datasheet. AEC-Q100 not applicable (this part is not automotive-qualified).
