IRLHS6242TRPBF vs IRLML6246TRPBF 对比
详细并排对比 IRLHS6242TRPBF 出自 Infineon 和 IRLML6246TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLHS6242TRPBF | IRLML6246TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.12 | $0.11 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (trench MOSFET) | IR MOSFET (HEXFET Power MOSFET) |
| Drain-to-Source Voltage (VDS) | 20 V | 20 V |
| Gate-to-Source Voltage (VGS) | ±12 V | — |
| Continuous Drain Current (TA) | 10 A | — |
| Continuous Drain Current (TC) | 12 A | — |
| On-Resistance RDS(on) max @ VGS=4.5V | 11.7 mΩ | 46 mOhm |
| Total Gate Charge (Qg) | 14 nC | — |
| Power Dissipation (TA) | 1.98 W | — |
| Power Dissipation (TC) | 9.6 W | — |
| 封装 | 6-PQFN (2x2) / DFN2020 with exposed pad | SOT-23 (Micro3) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55°C to +150°C | — |
| Gate Drive Level | Logic-level (4.5V); 2.5V-capable | — |
| Qualification | JEDEC standard | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLML6246TRPBF |
| Continuous Drain Current (ID) at Ta=25C | — | 4.1 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| On-Resistance RDS(on) max @ VGS=2.5V | — | [DATA_NEEDED: RDS(on) at 2.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.1 V (logic-level) |
| Gate Charge Qg typ | — | [DATA_NEEDED: Qg total gate charge] |
| Power Dissipation (Ta=25C) | — | 1.3 W |
| 工作温度范围 | — | -55C to +150C (junction) |
| RoHS Compliance | — | Yes (Pb-free) |
| 无卤 | — | Yes |
| MSL 等级 | — | MSL1 (per JEDEC J-STD-020) |