IXDN609YI - 9A Low-Side MOSFET/IGBT Gate Driver TO-263-5 | IXYS
料号： IXDN609YI ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.1 | $2.10 |
| 10 | $1.85 | $18.50 |
| 100 | $1.62 | $162.00 |
| 500 | $1.38 | $690.00 |
| 1,000 | $1.15 | $1,150.00 |
IXDN609YI 概述
Background: a gate driver is a power-management semiconductor that sits between a low-power control IC (MCU, FPGA, or analog controller) and the gate of a high-power switching device (MOSFET, IGBT, GaN, or SiC FET). Its role is to translate a logic-level PWM signal into a high-current, fast-rise/fall drive waveform that can charge and discharge the gate charge (Qg) of the switching transistor in nanoseconds. Within the broader hierarchy, gate drivers fall under power management ICs > MOSFET/IGBT drivers > low-side drivers; low-side means the driver switches the transistor's source to ground rather than floating the high-side rail, so it requires fewer components and is the most economical topology for buck converters, synchronous rectifiers, and motor half-bridge low-side switches.
Key features include matched rise/fall times for low EMI, latchup-immune CMOS input stage, proprietary circuitry that eliminates cross-conduction, and an extended operating temperature range up to +125 °C. The TO-263-5 (D2PAK) tab provides a low thermal-resistance path for dissipating the gate-drive losses at high switching frequencies. According to the IXYS datasheet, output current ratings from 2 A to 30 A are available in this driver family for switching the largest MOSFETs and IGBTs at frequencies up to 10 MHz.
Typical applications include high-frequency DC-DC converters, motor-drive low-side switches, Class-D audio amplifiers, power-conversion switching stages, and synchronous-rectifier drivers. The wide 4.5 V to 35 V supply range also makes it directly compatible with both 5 V and 12 V logic rails.
When designing with this device, ensure the gate-drive loop is minimized: keep the driver-to-gate trace short and wide, place a small gate resistor (1-10 Ω) close to the gate to dampen ringing, and provide a local bypass capacitor (≥1 µF X7R) directly at the VCC pin to supply the 9 A peak transients.
This page synthesizes distributor pricing, drop-in same-package alternatives (TO-263-5 D2PAK footprint), and engineering design notes drawn from the manufacturer datasheet and reference designs.
直接替换替代料： IXDN609YI ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IXDN609YI （相同外形与封装尺寸） ——差异在于 Fall Time, Operating Temperature Range, Package, Propagation Delay, Rise Time.
快速对比工具——选择替代料号进行并排对比：
IXDD609YI
✅ 直接替换📋 参考替代料（不在目录中）
IXDI609YI
✅ 直接替换📋 参考替代料（不在目录中）
IXDN614YI
✅ 直接替换📋 参考替代料（不在目录中）
UCC27511DBVR
✅ 直接替换📋 参考替代料（不在目录中）
IXDN609YI 最大额定值与电气特性
| Configuration | Low-Side |
| Peak Output Current (Source/Sink) | 9 A |
| Supply Voltage Range | 4.5 V to 35 V |
| Input Logic Compatibility | CMOS, non-inverting |
| Logic Input Negative Swing Tolerance | -5 V |
| Propagation Delay | 40 ns (typ) |
| 上升时间 | < 25 ns |
| 下降时间 | < 25 ns |
| 工作温度范围 | -40 °C to +125 °C |
| 封装 | TO-263-5 (D2PAK), 5 leads + tab |
| 安装类型 | Surface Mount |
| Latchup Immunity | Yes (proprietary CMOS input stage) |
| Cross-Conduction Protection | Yes |
| Matched Rise/Fall Times | Yes |
| MSL 等级 | Level 3 |
| RoHS 状态 | Compliant |
IXDN609YI 引脚配置
| 引脚 1 | IN — Logic input (CMOS, non-inverting) |
| 引脚 2 | GND — Ground |
| 引脚 3 | OUT — Gate drive output |
| 引脚 4 | VCC — Supply voltage (4.5 V to 35 V) |
| 引脚 5 | NC — Not connected (per datasheet) |
| 引脚 TAB | GND (TAB) — Metal tab, connected to GND for thermal dissipation |
典型应用
IXDN609YI 适用于 6 应用s: High-Frequency Synchronous Buck Converter, Brushless DC Motor Drive, Class-D Audio Amplifier Output Stage, Solar Inverter DC-DC Stage, Industrial Welding / Plasma Cutting Inverter, Telecom / Server Power Supply (48 V Buck Stage).
High-Frequency Synchronous Buck Converter
The IXDN609YI fits high-frequency synchronous buck converter low-side synchronous-rectifier MOSFET drive because it sources/sinks 9 A peak to charge and discharge the low-side MOSFET Qg in under 25 ns, enabling switching frequencies above 500 kHz. With 4.5 V to 35 V supply range and matched rise/fall times, it directly interfaces with 5 V or 12 V PWM controllers and minimizes dead-time losses. Place the driver within 10 mm of the MOSFET gate with a 1-10 Ω gate resistor to dampen parasitic ringing.
推荐
Brushless DC Motor Drive
The IXDN609YI suits BLDC motor-drive low-side IGBT switching stages because it delivers 9 A peak current to drive IGBT gates with rise/fall times under 25 ns, reducing switching losses in the motor inverter. The -5 V negative input swing tolerance prevents logic-stage latch-up from motor-common-mode noise. Operating from -40 °C to +125 °C, it tolerates harsh under-hood and industrial environments when paired with proper PCB thermal design on the TO-263-5 tab.
推荐
Class-D Audio Amplifier Output Stage
The IXDN609YI suits Class-D audio amplifier half-bridge low-side drive because its 9 A peak drive and matched rise/fall times minimize dead-time distortion that causes THD+N degradation in audio output. With sub-25 ns transition times and latchup-immune CMOS input, it pairs cleanly with audio PWM modulators and prevents shoot-through. Place a 1 Ω gate resistor close to the output MOSFET to control EMI without audible impact on amplifier performance.
推荐
Solar Inverter DC-DC Stage
The IXDN609YI is well-suited for solar inverter boost/PFC low-side switching because its 4.5 V to 35 V supply range directly handles 12 V and 24 V auxiliary rails without a separate regulator. The 9 A peak output reliably switches high-Qg IGBTs used in solar MPPT stages. The -40 °C to +125 °C operating range handles outdoor inverter thermal stress; ensure adequate copper pour on the TO-263-5 tab to dissipate switching losses at high duty cycles.
推荐
Industrial Welding / Plasma Cutting Inverter
The IXDN609YI fits industrial welding and plasma-cutting inverter low-side IGBT drive because its 9 A peak output and <25 ns transitions minimize switching losses in the high-current welding transformer primary. The wide 4.5 V to 35 V supply accommodates industrial 24 V bus rails, and the latchup-immune input rejects noise from the welding arc. Mount the TO-263-5 with substantial copper area to handle continuous high-frequency switching losses.
推荐
Telecom / Server Power Supply (48 V Buck Stage)
The IXDN609YI fits telecom/server 48 V to point-of-load buck low-side drive because its 35 V supply rating covers 24 V/36 V intermediate buses and its 9 A peak current drives high-Qg 80 V/100 V MOSFETs used in isolated bus converters. Sub-25 ns transitions enable >500 kHz switching for high power density. The -5 V input tolerance prevents false triggering during 48 V hot-swap transients.
推荐
推荐产品汇总
工程参考数据： IXDN609YI ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IXDD609YI | IXDI609YI | IXDN614YI | UCC27511DBVR |
|---|---|---|---|---|---|
| Brand | IXYS (Littelfuse) | IXYS | IXYS | IXYS | Texas Instruments |
| Package | TO-263-5 (D2PAK) | TO-263-5 (D2PAK) - same | TO-263-5 (D2PAK) - same | TO-263-5 (D2PAK) - same | TO-263-5 (5 leads + tab) - same |
| Peak Output Current | 9 A | 9 A | 9 A | 14 A (+55%) | 4 A (-55%) |
| Supply Voltage Range | 4.5 V to 35 V | 4.5 V to 35 V | 4.5 V to 35 V | 4.5 V to 35 V | 4.5 V to 18 V (narrower) |
| Logic Polarity | Non-inverting | Non-inverting | Inverting | Non-inverting | Non-inverting |
| Propagation Delay | 40 ns | 40 ns | 40 ns | 40 ns | 26 ns (faster) |
| Negative Input Swing Tolerance | -5 V | -5 V | -5 V | -5 V | -5 V |
| Operating Temperature Range | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +140 °C |
关键差异点
- Highest peak drive current in TO-263-5 with non-inverting logic （对比 UCC27511DBVR)
- Wider supply voltage range than TI cross-brand equivalent （对比 UCC27511DBVR)
- Same-family scalability within IXYS 609 series （对比 IXDN614YI)
设计说明
Minimize the gate-driver-to-MOSFET-gate loop inductance by placing the driver within 20 mm of the MOSFET gate. Use a wide, short gate trace (≥0.5 mm width) and place a gate resistor (1-10 Ω) directly at the MOSFET gate pin. According to the IXYS datasheet, the matched rise/fall times only deliver low EMI when the gate loop is tight; long traces cause ringing and shoot-through risk in half-bridge designs.
Place a low-impedance bypass capacitor (≥1 µF X7R ceramic) within 5 mm of the VCC pin to supply the high-peak gate-charge currents without ringing. Add a bulk capacitor (≥10 µF tantalum or electrolytic) on the same supply rail. The driver draws 9 A peak pulses at each switching transition, so inadequate decoupling causes VCC collapse and MOSFET gate-drive undervoltage.
The TO-263-5 (D2PAK) tab is the primary thermal dissipation path. Estimated: at 500 kHz switching with 50 nC Qg MOSFET and 12 V VCC, gate-drive losses are about 0.3 W per phase. Use at least 1 square inch of copper pour connected to the tab; without it, theta_JA exceeds 50 °C/W and the junction temperature can exceed +125 °C in enclosed industrial environments.
Do not exceed the 35 V absolute maximum VCC rating - transients above 35 V from inductive load dump or bus spikes will permanently damage the driver. Add a TVS diode (e.g. 36 V SMA) directly at VCC for automotive 24 V bus applications. The -5 V input swing tolerance does not extend to VCC; exceeding 35 V VCC is not protected.
Separate the power ground (source of the driven MOSFET) from the logic ground (VCC bypass return) and connect them at a single star point near the driver's GND pin. This prevents high di/dt gate currents from corrupting the logic input reference, which can otherwise cause false triggering and shoot-through in half-bridge configurations.
合规信息
RoHS compliant per IXYS/Littelfuse product page and Mouser listing. MSL Level 3 per JEDEC J-STD-020. Not AEC-Q100 qualified - select an automotive-grade gate driver if required. Halogen-free status unknown from verified data.
