IXDN609YI - 9A Low-Side MOSFET/IGBT Gate Driver TO-263-5 | IXYS
N.º da peça: IXDN609YI ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.1 | $2,10 |
| 10 | $1.85 | $18,50 |
| 100 | $1.62 | $162,00 |
| 500 | $1.38 | $690,00 |
| 1.000 | $1.15 | $1.150,00 |
IXDN609YI Visão geral
Background: a gate driver is a power-management semiconductor that sits between a low-power control IC (MCU, FPGA, or analog controller) and the gate of a high-power switching device (MOSFET, IGBT, GaN, or SiC FET). Its role is to translate a logic-level PWM signal into a high-current, fast-rise/fall drive waveform that can charge and discharge the gate charge (Qg) of the switching transistor in nanoseconds. Within the broader hierarchy, gate drivers fall under power management ICs > MOSFET/IGBT drivers > low-side drivers; low-side means the driver switches the transistor's source to ground rather than floating the high-side rail, so it requires fewer components and is the most economical topology for buck converters, synchronous rectifiers, and motor half-bridge low-side switches.
Key features include matched rise/fall times for low EMI, latchup-immune CMOS input stage, proprietary circuitry that eliminates cross-conduction, and an extended operating temperature range up to +125 °C. The TO-263-5 (D2PAK) tab provides a low thermal-resistance path for dissipating the gate-drive losses at high switching frequencies. According to the IXYS datasheet, output current ratings from 2 A to 30 A are available in this driver family for switching the largest MOSFETs and IGBTs at frequencies up to 10 MHz.
Typical applications include high-frequency DC-DC converters, motor-drive low-side switches, Class-D audio amplifiers, power-conversion switching stages, and synchronous-rectifier drivers. The wide 4.5 V to 35 V supply range also makes it directly compatible with both 5 V and 12 V logic rails.
When designing with this device, ensure the gate-drive loop is minimized: keep the driver-to-gate trace short and wide, place a small gate resistor (1-10 Ω) close to the gate to dampen ringing, and provide a local bypass capacitor (≥1 µF X7R) directly at the VCC pin to supply the 9 A peak transients.
This page synthesizes distributor pricing, drop-in same-package alternatives (TO-263-5 D2PAK footprint), and engineering design notes drawn from the manufacturer datasheet and reference designs.
Alternativas drop-in para IXDN609YI — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IXDN609YI (mesmo formato e footprint) — diferindo em Fall Time, Operating Temperature Range, Package, Propagation Delay, Rise Time.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IXDD609YI
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IXDI609YI
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IXDN614YI
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
UCC27511DBVR
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IXDD609SI
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$2.15 / unidade
Ver ficha técnica →IXDN609YI Classificações máximas e características elétricas
| Configuration | Low-Side |
| Peak Output Current (Source/Sink) | 9 A |
| Supply Voltage Range | 4.5 V to 35 V |
| Input Logic Compatibility | CMOS, non-inverting |
| Logic Input Negative Swing Tolerance | -5 V |
| Propagation Delay | 40 ns (typ) |
| Tempo de subida | < 25 ns |
| Tempo de descida | < 25 ns |
| Faixa de temperatura de operação | -40 °C to +125 °C |
| Encapsulamento | TO-263-5 (D2PAK), 5 leads + tab |
| Tipo de montagem | Surface Mount |
| Latchup Immunity | Yes (proprietary CMOS input stage) |
| Cross-Conduction Protection | Yes |
| Matched Rise/Fall Times | Yes |
| Nível MSL | Level 3 |
| Status RoHS | Compliant |
Configuração de pinos do IXDN609YI
| Pino 1 | IN — Logic input (CMOS, non-inverting) |
| Pino 2 | GND — Ground |
| Pino 3 | OUT — Gate drive output |
| Pino 4 | VCC — Supply voltage (4.5 V to 35 V) |
| Pino 5 | NC — Not connected (per datasheet) |
| Pino TAB | GND (TAB) — Metal tab, connected to GND for thermal dissipation |
Aplicações típicas
IXDN609YI é adequado para 6 aplicaçãos: High-Frequency Synchronous Buck Converter, Brushless DC Motor Drive, Class-D Audio Amplifier Output Stage, Solar Inverter DC-DC Stage, Industrial Welding / Plasma Cutting Inverter, Telecom / Server Power Supply (48 V Buck Stage).
High-Frequency Synchronous Buck Converter
The IXDN609YI fits high-frequency synchronous buck converter low-side synchronous-rectifier MOSFET drive because it sources/sinks 9 A peak to charge and discharge the low-side MOSFET Qg in under 25 ns, enabling switching frequencies above 500 kHz. With 4.5 V to 35 V supply range and matched rise/fall times, it directly interfaces with 5 V or 12 V PWM controllers and minimizes dead-time losses. Place the driver within 10 mm of the MOSFET gate with a 1-10 Ω gate resistor to dampen parasitic ringing.
Recomendado
Brushless DC Motor Drive
The IXDN609YI suits BLDC motor-drive low-side IGBT switching stages because it delivers 9 A peak current to drive IGBT gates with rise/fall times under 25 ns, reducing switching losses in the motor inverter. The -5 V negative input swing tolerance prevents logic-stage latch-up from motor-common-mode noise. Operating from -40 °C to +125 °C, it tolerates harsh under-hood and industrial environments when paired with proper PCB thermal design on the TO-263-5 tab.
Recomendado
Class-D Audio Amplifier Output Stage
The IXDN609YI suits Class-D audio amplifier half-bridge low-side drive because its 9 A peak drive and matched rise/fall times minimize dead-time distortion that causes THD+N degradation in audio output. With sub-25 ns transition times and latchup-immune CMOS input, it pairs cleanly with audio PWM modulators and prevents shoot-through. Place a 1 Ω gate resistor close to the output MOSFET to control EMI without audible impact on amplifier performance.
Recomendado
Solar Inverter DC-DC Stage
The IXDN609YI is well-suited for solar inverter boost/PFC low-side switching because its 4.5 V to 35 V supply range directly handles 12 V and 24 V auxiliary rails without a separate regulator. The 9 A peak output reliably switches high-Qg IGBTs used in solar MPPT stages. The -40 °C to +125 °C operating range handles outdoor inverter thermal stress; ensure adequate copper pour on the TO-263-5 tab to dissipate switching losses at high duty cycles.
Recomendado
Industrial Welding / Plasma Cutting Inverter
The IXDN609YI fits industrial welding and plasma-cutting inverter low-side IGBT drive because its 9 A peak output and <25 ns transitions minimize switching losses in the high-current welding transformer primary. The wide 4.5 V to 35 V supply accommodates industrial 24 V bus rails, and the latchup-immune input rejects noise from the welding arc. Mount the TO-263-5 with substantial copper area to handle continuous high-frequency switching losses.
Recomendado
Telecom / Server Power Supply (48 V Buck Stage)
The IXDN609YI fits telecom/server 48 V to point-of-load buck low-side drive because its 35 V supply rating covers 24 V/36 V intermediate buses and its 9 A peak current drives high-Qg 80 V/100 V MOSFETs used in isolated bus converters. Sub-25 ns transitions enable >500 kHz switching for high power density. The -5 V input tolerance prevents false triggering during 48 V hot-swap transients.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IXDN609YI — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IXDD609YI | IXDI609YI | IXDN614YI | UCC27511DBVR |
|---|---|---|---|---|---|
| Brand | IXYS (Littelfuse) | IXYS | IXYS | IXYS | Texas Instruments |
| Package | TO-263-5 (D2PAK) | TO-263-5 (D2PAK) - same | TO-263-5 (D2PAK) - same | TO-263-5 (D2PAK) - same | TO-263-5 (5 leads + tab) - same |
| Peak Output Current | 9 A | 9 A | 9 A | 14 A (+55%) | 4 A (-55%) |
| Supply Voltage Range | 4.5 V to 35 V | 4.5 V to 35 V | 4.5 V to 35 V | 4.5 V to 35 V | 4.5 V to 18 V (narrower) |
| Logic Polarity | Non-inverting | Non-inverting | Inverting | Non-inverting | Non-inverting |
| Propagation Delay | 40 ns | 40 ns | 40 ns | 40 ns | 26 ns (faster) |
| Negative Input Swing Tolerance | -5 V | -5 V | -5 V | -5 V | -5 V |
| Operating Temperature Range | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +125 °C | -40 °C to +140 °C |
Principais diferenciais
- Highest peak drive current in TO-263-5 with non-inverting logic (vs UCC27511DBVR)
- Wider supply voltage range than TI cross-brand equivalent (vs UCC27511DBVR)
- Same-family scalability within IXYS 609 series (vs IXDN614YI)
Notas de projeto
Minimize the gate-driver-to-MOSFET-gate loop inductance by placing the driver within 20 mm of the MOSFET gate. Use a wide, short gate trace (≥0.5 mm width) and place a gate resistor (1-10 Ω) directly at the MOSFET gate pin. According to the IXYS datasheet, the matched rise/fall times only deliver low EMI when the gate loop is tight; long traces cause ringing and shoot-through risk in half-bridge designs.
Place a low-impedance bypass capacitor (≥1 µF X7R ceramic) within 5 mm of the VCC pin to supply the high-peak gate-charge currents without ringing. Add a bulk capacitor (≥10 µF tantalum or electrolytic) on the same supply rail. The driver draws 9 A peak pulses at each switching transition, so inadequate decoupling causes VCC collapse and MOSFET gate-drive undervoltage.
The TO-263-5 (D2PAK) tab is the primary thermal dissipation path. Estimated: at 500 kHz switching with 50 nC Qg MOSFET and 12 V VCC, gate-drive losses are about 0.3 W per phase. Use at least 1 square inch of copper pour connected to the tab; without it, theta_JA exceeds 50 °C/W and the junction temperature can exceed +125 °C in enclosed industrial environments.
Do not exceed the 35 V absolute maximum VCC rating - transients above 35 V from inductive load dump or bus spikes will permanently damage the driver. Add a TVS diode (e.g. 36 V SMA) directly at VCC for automotive 24 V bus applications. The -5 V input swing tolerance does not extend to VCC; exceeding 35 V VCC is not protected.
Separate the power ground (source of the driven MOSFET) from the logic ground (VCC bypass return) and connect them at a single star point near the driver's GND pin. This prevents high di/dt gate currents from corrupting the logic input reference, which can otherwise cause false triggering and shoot-through in half-bridge configurations.
Informações de conformidade
RoHS compliant per IXYS/Littelfuse product page and Mouser listing. MSL Level 3 per JEDEC J-STD-020. Not AEC-Q100 qualified - select an automotive-grade gate driver if required. Halogen-free status unknown from verified data.
