M95040-DRMN3TP/K - 4Kbit SPI EEPROM | STMicroelectronics
料号： M95040-DRMN3TP/K ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.45 | $0.45 |
| 10 | $0.4 | $4.00 |
| 100 | $0.35 | $35.00 |
| 500 | $0.3 | $150.00 |
| 1,000 | $0.25 | $250.00 |
M95040-DRMN3TP/K 概述
An EEPROM (Electrically Erasable Programmable Read-Only Memory) is a non-volatile memory that can be electrically erased and reprogrammed. It retains data when power is removed, making it essential for storing configuration parameters, calibration data, and small amounts of firmware in embedded systems. EEPROMs are part of the memory IC hierarchy, which includes ROM, PROM, EPROM, and flash memory, with EEPROM offering byte-level erase and write capability.
Key features of the M95040-DRMN3TP/K include a clock frequency of up to 10 MHz, a write cycle time of 5 ms, and a write protection mechanism using a hardware Write Protect (W) pin and a Status Register. The device supports both SPI modes 0 and 3, and features a page write capability of 16 bytes. It also provides a software write protection option via the Status Register's BP0 and BP1 bits.
The M95040-DRMN3TP/K is built using STMicroelectronics' advanced CMOS technology, ensuring low power consumption with a maximum standby current of 2 µA and an active current of 2 mA at 5.5V. The device is qualified for industrial temperature range (-40°C to +85°C) and is RoHS compliant. It is also available in automotive grade (AEC-Q100) variants, such as the M95040-DRMN3TP/K, which is specifically designed for automotive applications.
Typical applications include automotive body control modules, industrial sensors, smart meters, and consumer electronics where reliable non-volatile storage is required. The SPI interface allows easy integration with microcontrollers, and the small SO-8N package fits into compact PCB layouts.
When designing with this device, ensure proper decoupling capacitors on the supply pins and consider the write cycle time when updating data. The Write Protect pin should be tied to a known state to prevent accidental writes during power-up.
直接替换替代料： M95040-DRMN3TP/K ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
M95040-DRMN3TP
✅ 直接替换📋 参考替代料（不在目录中）
M95040-DRMN6TP
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
25AA040
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
CAT25040
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
BR25S040
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
M95040-DRMN3TP/K 规格参数
| 存储容量 | 4 Kbit (512 x 8) |
| 接口类型 | SPI |
| Supply Voltage Range | 1.8 V to 5.5 V |
| 最大时钟频率 | 10 MHz |
| Write Cycle Time | 5 ms |
| Page Size | 16 bytes |
| 工作温度范围 | -40°C to +85°C |
| 封装 | SO-8N |
| 安装类型 | Surface Mount |
| Standby Current | 2 µA (max) |
| Active Current | 2 mA (max at 5.5V) |
| Write Protection | Hardware (W pin) and Software (BP0, BP1) |
| SPI Modes | Mode 0 and Mode 3 |
| RoHS 状态 | Compliant |
| AEC-Q100 | Qualified (automotive grade) |
M95040-DRMN3TP/K 引脚配置
| 引脚 1 | S — Chip Select (active low) |
| 引脚 2 | C — Serial Clock |
| 引脚 3 | D — Serial Data Input |
| 引脚 4 | Q — Serial Data Output |
| 引脚 5 | W — Write Protect (active low) |
| 引脚 6 | VCC — Power Supply |
| 引脚 7 | VSS — Ground |
| 引脚 8 | HOLD — Hold (active low) |
典型应用
M95040-DRMN3TP/K 适用于 6 应用s: Automotive Body Control Module, Industrial Sensor Calibration, Smart Metering, Consumer Electronics Configuration, Medical Device Parameter Storage, IoT Device Firmware Storage.
Automotive Body Control Module
The M95040-DRMN3TP/K is AEC-Q100 qualified, making it ideal for automotive body control modules. It stores configuration data such as lighting settings, window positions, and door lock parameters. The SPI interface allows fast read/write access, and the wide voltage range (1.8V to 5.5V) ensures compatibility with automotive power rails. The low standby current (2 µA) minimizes battery drain when the vehicle is off. In a typical BCM, the EEPROM is connected to the microcontroller's SPI bus, with the Write Protect pin tied to a GPIO for software-controlled write protection. The 5 ms write cycle time is acceptable for infrequent parameter updates. The SO-8N package fits on compact PCB layouts, and the -40°C to +85°C temperature range covers automotive operating conditions.
推荐
Industrial Sensor Calibration
Industrial sensors often require calibration data to be stored in non-volatile memory. The M95040-DRMN3TP/K provides 4Kbit of storage, sufficient for calibration coefficients and sensor ID. The SPI interface enables high-speed data transfer up to 10 MHz, allowing quick calibration updates during manufacturing. The device operates from 1.8V to 5.5V, compatible with various sensor supply voltages. The write protection feature prevents accidental overwrites during operation. In a typical sensor module, the EEPROM is connected to a microcontroller or FPGA via SPI, with the Write Protect pin controlled by a GPIO. The 5 ms write cycle time is acceptable for calibration procedures. The SO-8N package is suitable for compact sensor housings, and the industrial temperature range (-40°C to +85°C) ensures reliable operation in harsh environments.
推荐
Smart Metering
Smart meters require non-volatile memory to store consumption data, calibration constants, and configuration settings. The M95040-DRMN3TP/K offers 4Kbit of storage, which is adequate for these parameters. The SPI interface allows efficient communication with the meter's microcontroller, and the low standby current (2 µA) is crucial for battery-powered meters. The wide voltage range (1.8V to 5.5V) supports both 3.3V and 5V logic. The write protection feature ensures data integrity against accidental writes. In a smart meter, the EEPROM is typically connected to the main MCU via SPI, with the Write Protect pin tied to a GPIO. The 5 ms write cycle time is acceptable for periodic data logging. The SO-8N package is compact, and the industrial temperature range covers outdoor installation conditions.
推荐
Consumer Electronics Configuration
In consumer electronics, the M95040-DRMN3TP/K stores configuration data such as device settings, user preferences, and calibration data. The SPI interface provides fast access, and the small SO-8N package is ideal for space-constrained designs like smartwatches, earbuds, and remote controls. The low standby current (2 µA) extends battery life in portable devices. The wide voltage range (1.8V to 5.5V) allows operation from a single lithium-ion cell (3.0V to 4.2V). The write protection feature prevents accidental data corruption. In a typical consumer device, the EEPROM is connected to the application processor via SPI, with the Write Protect pin controlled by a GPIO. The 5 ms write cycle time is acceptable for occasional settings changes. The -40°C to +85°C temperature range covers consumer operating environments.
推荐
Medical Device Parameter Storage
Medical devices require reliable non-volatile memory for storing patient data, device settings, and calibration parameters. The M95040-DRMN3TP/K provides 4Kbit of storage, sufficient for these needs. The SPI interface allows secure and fast data transfer, and the low standby current (2 µA) is important for battery-powered devices like glucose monitors and hearing aids. The wide voltage range (1.8V to 5.5V) supports various battery chemistries. The write protection feature ensures data integrity, which is critical in medical applications. In a typical medical device, the EEPROM is connected to a microcontroller via SPI, with the Write Protect pin tied to a GPIO. The 5 ms write cycle time is acceptable for infrequent data updates. The SO-8N package is compact, and the industrial temperature range covers clinical environments.
推荐
IoT Device Firmware Storage
IoT devices often need to store firmware updates, device certificates, and sensor calibration data. The M95040-DRMN3TP/K offers 4Kbit of non-volatile storage, which can hold small firmware patches or configuration data. The SPI interface enables fast data transfer, and the low standby current (2 µA) is crucial for battery-powered IoT nodes. The wide voltage range (1.8V to 5.5V) supports various power sources, including energy harvesting. The write protection feature prevents unauthorized writes. In a typical IoT device, the EEPROM is connected to a low-power MCU via SPI, with the Write Protect pin controlled by a GPIO. The 5 ms write cycle time is acceptable for occasional updates. The SO-8N package is suitable for compact PCB designs, and the industrial temperature range covers outdoor deployments.
推荐
推荐产品汇总
工程参考数据： M95040-DRMN3TP/K ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | M95040-DRMN3TP | 25AA040 | CAT25040 |
|---|---|---|---|---|
| Package | SO-8N | SO-8N | SO-8N | SO-8N |
| Brand | STMicroelectronics | STMicroelectronics | Microchip Technology | onsemi |
| Memory Size | 4 Kbit | 4 Kbit | 4 Kbit | 4 Kbit |
| Supply Voltage Range | 1.8V to 5.5V | 1.8V to 5.5V | 1.8V to 5.5V | 1.8V to 5.5V |
| Max Clock Frequency | 10 MHz | 10 MHz | 10 MHz | 10 MHz |
| Write Cycle Time | 5 ms | 5 ms | 5 ms | 5 ms |
| Page Size | 16 bytes | 16 bytes | 16 bytes | 16 bytes |
| AEC-Q100 | Qualified | Not qualified | Not qualified | Not qualified |
关键差异点
- Automotive grade (AEC-Q100 qualified) （对比 M95040-DRMN3TP)
- Wide supply voltage range (1.8V to 5.5V) （对比 25AA040)
- Low standby current (2 µA) （对比 CAT25040)
设计说明
Place a 0.1 µF ceramic capacitor close to the VCC pin and a 1 µF capacitor in parallel for bulk decoupling. The supply voltage should be stable and within the 1.8V to 5.5V range. Avoid voltage spikes above 5.5V, as they may damage the device.
Keep the SPI traces (S, C, D, Q) short and avoid routing them near high-speed digital lines to minimize crosstalk. Use ground planes to reduce noise. The SO-8N package has a thermal pad; ensure proper soldering for mechanical strength and thermal performance.
Ensure the Write Protect (W) pin is tied to VCC or controlled by a GPIO to prevent accidental writes. The HOLD pin should be tied to VCC if not used. During write cycles, do not issue new commands until the write cycle completes (5 ms). Also, verify SPI mode (0 or 3) matches the master's configuration.
合规信息
RoHS compliant per STMicroelectronics product page. AEC-Q100 qualified for automotive applications.
