MRF18085BLSR3 - 85W 26V 1.93-1.99GHz RF Power MOSFET | NXP
料号： MRF18085BLSR3 ⚠ 最后一次采购| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $33.88 | $33.88 |
| 10 | $32.45 | $324.50 |
| 100 | $30.1 | $3,010.00 |
| 500 | $27.85 | $13,925.00 |
| 1,000 | $25.4 | $25,400.00 |
MRF18085BLSR3 概述
An RF power MOSFET is a lateral metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power operation. Compared with earlier bipolar RF transistors, lateral MOSFETs offer higher gain, better thermal stability, and easier broadband impedance matching. MRF18085BLSR3 belongs to the NXP (formerly Motorola/Freescale) RF MOSFET family aimed at cellular base-station power amplifiers, sitting within the broader hierarchy: RF power transistor → RF power MOSFET → base-station PA device → wireless infrastructure semiconductor.
Differentiating features include high power density at 1.93–1.99 GHz, integrated ESD protection structure, gold metallization for high reliability, ceramic-metal hermetic NI-780 package for low thermal resistance, and a high breakdown voltage tolerant of 26 V supply operation. The lateral MOSFET architecture supports broadband matching and simplifies PCB-level amplifier design.
Architecturally, the device uses a lateral N-channel enhancement-mode MOSFET structure with a gate length tuned for the 2 GHz cellular band. The ceramic NI-780 package provides a low-inductance, low-thermal-resistance path for high-power RF operation, while the metal-sealed cofired ceramic body offers hermeticity required for telecom-grade reliability.
Typical applications include GSM/EDGE base-station power amplifiers at 1.93–1.99 GHz, TDMA and CDMA driver or final-stage amplifiers, multicarrier cellular amplifiers, and other wireless infrastructure RF power stages requiring high gain and high efficiency at UHF frequencies.
When designing with the MRF18085BLSR3, ensure adequate RF heatsinking via the package flange and use proper low-loss matching networks with sufficient DC blocking on input and output. Pay close attention to device bias sequencing to avoid exceeding the maximum rated drain voltage.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers evaluate availability, replacement options, and application fit for the MRF18085BLSR3.
直接替换替代料： MRF18085BLSR3 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MRF18085BLR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF18085B
✅ 直接替换📋 参考替代料（不在目录中）
MRF18085BR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF18085BLSR3 最大额定值与电气特性
| 晶体管类型 | RF Power MOSFET, N-Channel, Lateral, Enhancement-Mode |
| Frequency Range | 1930 MHz to 1990 MHz |
| Output Power | 85 W (typical) |
| Drain Supply Voltage (VDD) | 26 V (typical) |
| Maximum Power Dissipation | 273 W (absolute maximum) |
| Configuration | Single, N-Channel |
| Surface Mount | No (flange-mount NI-780 package) |
| 封装 / 外壳 | NI-780, CASE 465-06, STYLE 1 |
| Package Body Material | Ceramic, metal-sealed cofired |
| Terminal Form | Flat (flange) |
| Transistor Element Material | Silicon |
| Application | GSM / GSM EDGE base station PA, TDMA, CDMA, multicarrier amplifiers |
| 安装类型 | Flange / Chassis Mount |
MRF18085BLSR3 引脚配置
| 引脚 1 | RF Input / Gate — RF input / gate bias (per CASE 465-06 STYLE 1 mechanical drawing) |
| 引脚 2 | Drain — Drain supply, 26 V typical |
| 引脚 3 | RF Output — RF output (drain RF path) |
| 引脚 4 | Flange / Ground — Mounting flange serves as thermal path and RF/DC ground |
安全工作区 - MRF18085BLSR3
典型应用
MRF18085BLSR3 适用于 6 应用s: GSM/EDGE Base Station Power Amplifier, TDMA Cellular Base Station PA, CDMA Cellular Infrastructure Amplifier, Multicarrier Power Amplifier, Wireless Infrastructure RF Driver Stage, Legacy Base Station Repair / Replacement.
GSM/EDGE Base Station Power Amplifier
The MRF18085BLSR3 delivers 85 W output power across 1930–1990 MHz with a 26 V drain supply, matching the requirements of GSM and GSM EDGE base-station PA final stages. Its high power density and lateral N-channel enhancement-mode architecture support linear EDGE modulation with adequate gain and efficiency margins. The NI-780 ceramic flange package provides low thermal resistance for continuous base-station duty cycles. According to the datasheet, the part is optimized specifically for this band, ensuring low memory effects and predictable ACLR performance when properly matched.
推荐
TDMA Cellular Base Station PA
TDMA systems require robust RF power transistors capable of handling high peak-to-average ratios at 1.9 GHz. The MRF18085BLSR3's 273 W maximum dissipation rating and 85 W CW-rated output provide thermal and electrical margin for TDMA burst profiles. Per the datasheet, the device is explicitly listed as suitable for TDMA applications in addition to GSM/EDGE. Its ceramic-metal hermetic NI-780 package ensures long-term reliability in outdoor telecom equipment exposed to wide temperature swings.
推荐
CDMA Cellular Infrastructure Amplifier
CDMA base-station power amplifiers require linearity and wideband frequency response near 1.9–2.0 GHz. The MRF18085BLSR3 supports CDMA amplification per its datasheet application listing, with the lateral MOSFET structure providing flat gain across the 60 MHz operating window. Designers typically operate it at backed-off power levels to meet ACPR requirements while leveraging the 85 W CW ceiling for peak envelope handling. The NI-780 flange mount is compatible with standard CDMA PA heatsink assemblies.
推荐
Multicarrier Power Amplifier
Multicarrier amplifier applications stack multiple modulated carriers into a single RF chain, demanding high linearity and high peak power. The MRF18085BLSR3's 85 W rated output and 26 V drain operation give headroom for combining several carriers while maintaining low intermodulation distortion. According to the datasheet, the part is qualified for multicarrier amplifier use. Its NI-780 package's low thermal resistance supports the continuous high dissipation typical of multicarrier PAs.
推荐
Wireless Infrastructure RF Driver Stage
Higher-power final stages in macro-cell base stations often pair a driver transistor ahead of the final PA. The MRF18085BLSR3's 85 W rating makes it suitable as a driver for even larger NXP lateral MOSFET finals in the 1.9 GHz band, particularly in retrofit designs where matching networks were originally tuned for the NI-780 footprint. Per the datasheet, the device delivers stable gain and efficiency in driver configurations, with bias networks optimized for AB-class operation common in driver stages.
推荐
Legacy Base Station Repair / Replacement
Many deployed cellular base stations still require replacement of failed 1.9 GHz RF power MOSFETs on original PCB assemblies. The MRF18085BLSR3 is widely used in legacy GSM/EDGE infrastructure repair workflows, with the NI-780 flange-mount package allowing direct mechanical substitution on existing heatsinks. Because NXP has removed the part from active production, repair operations stock the MRF18085 family variants (LR3, B, BR3) as drop-in equivalents. Distributors like LCSC and Veswin list the part specifically for legacy telecom repair pipelines.
推荐
推荐产品汇总
工程参考数据： MRF18085BLSR3 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF18085BLR3 | MRF18085B | MRF18085BR3 |
|---|---|---|---|---|
| Package | NI-780 (CASE 465-06) | NI-780 (CASE 465-06) - same | NI-780 (CASE 465-06) - same | NI-780 (CASE 465-06) - same |
| Brand | NXP Semiconductors | NXP Semiconductors (same) | NXP Semiconductors (same) | NXP Semiconductors (same) |
| Output Power | 85 W | 85 W | 85 W | 85 W |
| Drain Supply Voltage | 26 V | 26 V | 26 V | 26 V |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz |
| Maximum Dissipation | 273 W | 273 W | 273 W | 273 W |
| Lifecycle Status | last_time_buy | last_time_buy | last_time_buy | last_time_buy |
| Channel Type | N-Channel, Enhancement-Mode | N-Channel, Enhancement-Mode | N-Channel, Enhancement-Mode | N-Channel, Enhancement-Mode |
关键差异点
- Family-internal drop-in compatibility across MRF18085 series （对比 MRF18085BLR3)
- Suffix variant flexibility within the same die （对比 MRF18085B)
- Hermetic ceramic NI-780 reliability （对比 Plastic-packaged RF MOSFETs)
设计说明
Estimated: at 26 V drain and 85 W RF output, the DC dissipation budget before RF conversion efficiency is roughly 100–150 W (depending on PA efficiency). The NI-780 ceramic flange must be bolted to a heatsink with thermal compound; without adequate heatsinking the junction will exceed 200 °C and trigger thermal runaway. Use a chassis-mount torque per the datasheet mechanical drawing to ensure proper thermal interface pressure.
The MRF18085BLSR3 is a flange-mount part, not a SMD. Design PCB cutouts to clear the NI-780 package body, with the RF input and output traces on 50 Ω microstrip lines exiting the package leads. Keep gate bias traces short and decoupled with 100 nF + 10 µF capacitors near the gate pin to suppress low-frequency oscillation. Ensure the flange is RF-grounded via short bond straps to the amplifier chassis.
Do not exceed 26 V on the drain for continuous operation - the datasheet rates the part at 26 V typical and absolute maximum dissipation at 273 W. Exceeding either limit destroys the device. Also ensure proper gate bias sequencing (negative gate voltage applied before drain) to avoid thermal runaway at startup. Avoid operating below the recommended idle current, which degrades linearity in EDGE/CDMA modes.
合规信息
Compliance details not present in verified web data; RoHS/lead-free marked unknown pending manufacturer confirmation. Not AEC-Q100 qualified - this is a base-station telecom part, not an automotive grade.
