MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP
料号： MRF5S21100HSR5 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $28.5 | $28.50 |
| 10 | $26.2 | $262.00 |
| 100 | $23.95 | $2,395.00 |
| 500 | $21.5 | $10,750.00 |
| 1,000 | $19.8 | $19,800.00 |
MRF5S21100HSR5 概述
An RF power MOSFET is a specialized lateral or vertical power field-effect transistor optimized to deliver useful gain and efficiency at radio frequencies above 100 MHz, as opposed to a switching-mode power MOSFET which targets low-frequency power conversion. RF power MOSFETs sit inside the larger hierarchy of power transistors (MOSFET -> FET -> transistor -> discrete semiconductor -> semiconductor) and represent the workhorse device for solid-state RF power generation in the 1 MHz to 3 GHz range, replacing older bipolar power transistors in many applications because of their higher input impedance and easier broadband matching.
Key features of the MRF5S21100HSR5 include 23 W CW output power capability, 13.5 dB typical gain at 2.17 GHz from a 28 V supply, a 65 V absolute maximum drain-to-source voltage, integrated ESD protection structure, and a thermally enhanced NI-780S ceramic package with a low thermal-resistance path designed for bolt-down flange mounting to an external heatsink. The device is fabricated on NXP's laterally diffused metal-oxide-semiconductor (LDMOS) process technology which has become the de-facto standard for sub-3 GHz RF power amplification.
Typical applications include UMTS and LTE base-station driver stages in the 2.1 GHz downlink band, RFID and industrial-scientific-medical (ISM) band power amplifiers at 2.17 GHz, military and avionics RF links, and pulsed-radar driver amplifiers. The high gain at this frequency allows a single device to deliver the rated 23 W output with relatively low input drive, simplifying the preceding driver chain.
When designing with this device, allocate a substantial copper or aluminum heatsink with the lowest practical thermal resistance; the NI-780S package is specifically intended for bolt-down flange mounting rather than PCB-only thermal dissipation. Match the input and output networks to 50 ohms for test, and follow the NXP application-note bias sequencing to prevent thermal runaway during turn-on.
直接替换替代料： MRF5S21100HSR5 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MRF5S21100HSR5 （相同外形与封装尺寸） ——差异在于 Manufacturer, Mounting Type, Package / Case, Power Gain, Transistor Type.
快速对比工具——选择替代料号进行并排对比：
MRF5S21130HSR5
✅ 直接替换✓ 有现货
$33.4 / 个
查看数据手册 →MRF5S21100H
✅ 直接替换📋 参考替代料（不在目录中）
MRF5S21090HSR5
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF5S21100HSR5 最大额定值与电气特性
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status | Active |
| 晶体管类型 | N-Channel RF Power MOSFET |
| Technology | LDMOS (Laterally Diffused MOS) |
| Operating Frequency | 2.16 GHz to 2.17 GHz |
| Drain-to-Source Voltage (Vdss) Max | 65 V |
| Test Supply Voltage | 28 V |
| Output Power (Pout) | 23 W (CW) |
| Power Gain | 13.5 dB (typical) |
| Drain Current (Id) | 1.05 A |
| 封装 / 外壳 | NI-780S (ceramic flange-mount) |
| 安装类型 | Chassis / Flange Mount (through-hole RF) |
| 工作温度范围 | -40C to +150C (junction) |
MRF5S21100HSR5 引脚配置
| 引脚 1 | RF Input / Gate — RF input lead, also gate bias access |
| 引脚 2 | Drain (Vdd) — DC drain supply, typically 28 V |
| 引脚 3 | RF Output — RF output lead |
| 引脚 4 | Source / Flange Ground — Source and chassis ground via ceramic flange |
Forward Bias 安全工作区 (estimated, see datasheet)
典型应用
MRF5S21100HSR5 适用于 6 应用s: UMTS/LTE 2.1 GHz Base-Station Driver Stage, Industrial / ISM Band 2.17 GHz Power Amplifier, Avionics and Military RF Link Amplifier, Pulsed-Radar Driver Amplifier, RFID Reader Power Amplifier, Test-and-Measurement RF Power Reference.
UMTS/LTE 2.1 GHz Base-Station Driver Stage
The MRF5S21100HSR5's 23 W CW output at 2.17 GHz and 13.5 dB typical gain make it a strong candidate as a driver or low-power final stage in 2.1 GHz UMTS and LTE base-station transmitters. Operating from a 28 V supply rail matches the standard DC bus used in macro-cell RF line-ups, simplifying power-conversion design. Compared with a 5 W or 10 W surface-mount RF MOSFET, the NI-780S flange package and 23 W rating allow one device to replace two cascaded stages, reducing board area and BOM cost in the PA chain.
推荐
Industrial / ISM Band 2.17 GHz Power Amplifier
The 2.16 to 2.17 GHz band overlaps several industrial-scientific-medical (ISM) allocations and proprietary RF heating or plasma-generation links. With 23 W CW output and 13.5 dB gain at 28 V, the MRF5S21100HSR5 provides sufficient headroom for class-AB linear amplification of digital modulation while remaining rugged under VSWR mismatch typical of industrial loads. Bolt-down NI-780S mounting simplifies integration into sealed industrial RF enclosures where PCB-only cooling is inadequate.
推荐
Avionics and Military RF Link Amplifier
The 2.1 to 2.2 GHz band covers portions of the avionics transponder and tactical military data-link spectrums. The MRF5S21100HSR5's NXP LDMOS process delivers the ruggedness required for military environments, including operation across -40C to +150C junction temperature and survival under high VSWR. The ceramic NI-780S package is hermetic-friendly and has a long heritage in defence RF line-replaceable units. A single 23 W device can drive a higher-power tube or SSPA final in a compact exciter chassis.
推荐
Pulsed-Radar Driver Amplifier
For short-pulse radar in the 2.1 GHz band, the MRF5S21100HSR5's 23 W CW capability translates to substantially higher peak power under pulsed operation with conservative duty cycle, while the 65 V Vdss rating provides the headroom needed for pulsed drain modulation. The 13.5 dB gain reduces driver-stage count, lowering system noise figure and improving pulse-to-pulse phase stability. NI-780S flange mounting simplifies integration into a radar chassis with forced-air or liquid cooling.
推荐
RFID Reader Power Amplifier
Long-range passive UHF RFID readers operating near 2.17 GHz require linear power amplifiers in the 10 to 30 W class to read tags at 10+ meters. The MRF5S21100HSR5's 13.5 dB gain at 2.17 GHz and 23 W CW output position it as an excellent PA candidate, providing the linear headroom needed for DSB-ASK or PR-ASK modulation while remaining efficient in class-AB bias. The bolt-down NI-780S package is well suited to the ruggedized enclosures typical of industrial RFID portals.
推荐
Test-and-Measurement RF Power Reference
RF test benches and ATE systems require calibrated 2.1 GHz power amplifiers with documented gain, efficiency and harmonic performance. The MRF5S21100HSR5, with its 23 W CW rating and 13.5 dB gain at 2.17 GHz from 28 V, is well matched to reference-driver roles in production test racks for cellular handsets and small cells. The NI-780S chassis mount enables repeatable thermal anchoring in a lab environment, where surface-mount RF MOSFETs can drift with board temperature.
推荐
推荐产品汇总
工程参考数据： MRF5S21100HSR5 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF5S21130HSR5 | MRF5S21100H | MRF5S21090HSR5 |
|---|---|---|---|---|
| Package | NI-780S (ceramic flange) | NI-780S (same) | NI-780S (same) | NI-780S (same) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (CW) | 23 W | 30 W | 23 W | 19 W |
| Operating Frequency | 2.16 - 2.17 GHz | 2.16 - 2.17 GHz | 2.16 - 2.17 GHz | 2.16 - 2.17 GHz |
| Test Supply Voltage | 28 V | 28 V | 28 V | 28 V |
| Power Gain | 13.5 dB | 13.0 dB (typical, lower) | 13.5 dB | 14.0 dB (typical, higher) |
| Vdss Max | 65 V | 65 V | 65 V | 65 V |
| Packaging Suffix | SR5 (reel) | SR5 (reel) | bulk pack | SR5 (reel) |
关键差异点
- 23 W CW in a single NI-780S device at 2.17 GHz （对比 MRF5S21130HSR5 (30 W))
- Pin-compatible with 19 W MRF5S21090HSR5 （对比 MRF5S21090HSR5 (19 W))
- Available in both bulk and SR5 reel pack （对比 MRF5S21100H (bulk))
设计说明
Estimated: at 23 W CW Pout, 28 V supply, and roughly 50 percent drain efficiency, the device dissipates approximately 23 W of waste heat in the NI-780S ceramic flange. The flange MUST be bolted to an external heatsink with low thermal compound; PCB copper alone will not dissipate this level of power. Target a heatsink thermal resistance below 1 C/W to keep the junction below 150 C at 25 C ambient.
The RF input and output leads of the NI-780S are 50 ohm nominal impedances and require external matching networks. Use microstrip or stripline on the host PCB tuned to 2.17 GHz, with the input network providing the necessary gain-equalisation and the output network maximising power and efficiency. Add gate-bias feed networks with gate-source resistors and DC-blocking capacitors per the NXP evaluation-board layout.
Do not exceed Vdss = 65 V or Id = 1.05 A. Apply gate bias before drain voltage to prevent thermal runaway and uncontrolled current spikes. Always include a gate-source pull-down resistor (typically 10 kohm) so the device defaults to off-state during power-up sequencing. Source: NXP LDMOS bias sequencing application notes.
Use a low-loss PCB substrate such as Rogers RO4003C or equivalent for the matching-network traces. Provide abundant via stitching around the RF leads to maintain a continuous ground reference, and keep the gate-bias trace physically separated from the RF path to prevent coupling and instability. Source: standard NXP 2 GHz RF PA layout practice.
合规信息
Compliance status not stated in the provided data excerpt. NXP's legacy ceramic RF power packages frequently fall under the RoHS high-temperature solder exemption - verify with NXP product-compliance database before RoHS-only assembly.
