MRF5S21100HSR5 vs MRF5S21130HSR5 对比

详细并排对比 MRF5S21100HSR5 出自 NXP Semiconductors 和 MRF5S21130HSR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF5S21100HSR5 MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP

MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP

MRF5S21100HSR5 ✓ 量产中
NXP Semiconductors
MRF5S21130HSR5 MRF5S21130HSR5 - 28W RF LDMOS 2.11-2.17GHz NI-880S | NXP

MRF5S21130HSR5 - 28W RF LDMOS 2.11-2.17GHz NI-880S | NXP

MRF5S21130HSR5 Obsolete

规格对比

参数 MRF5S21100HSR5 MRF5S21130HSR5
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 Obsolete
库存状态 有库存 有库存
单价(USD) $19.80 $33.40
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale, Motorola)
Part Status Active —
晶体管类型 N-Channel RF Power MOSFET LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology LDMOS (Laterally Diffused MOS) —
Operating Frequency 2.16 GHz to 2.17 GHz 2.11 GHz to 2.17 GHz
Drain-to-Source Voltage (Vdss) Max 65 V —
Test Supply Voltage 28 V —
Output Power (Pout) 23 W (CW) —
Power Gain 13.5 dB (typical) 13.5 dB (typical)
Drain Current (Id) 1.05 A —
封装 / 外壳 NI-780S (ceramic flange-mount) NI-880S ceramic
安装类型 Chassis / Flange Mount (through-hole RF) Surface Mount (SMT) with ceramic body
工作温度范围 -40C to +150C (junction) —
RoHS 状态 [DATA_NEEDED: RoHS status from NXP product page] —
Lead-Free [DATA_NEEDED: lead-free finish] —
Part Number — MRF5S21130HSR5
Series — RF MOSFET Line / HV5
Test Voltage (Vdd) — 28 V
Test Current (Idq) — 1.2 A
Power Output (Pout) — 28 W (CW)
Drain-Source Voltage (Vdss Rated) — 65 V
Application — W-CDMA base station, TDMA/CDMA, multi-carrier amplifier
Status — Obsolete (last-time-buy windows closed at authorized distributors)
Tape and Reel Pack — R5 suffix = 500-piece reel
Orderable Lead-Free Status — [DATA_NEEDED: lead-free status from NXP PCN]

数据手册与资源

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