MRF6S21190HR3 - 2110-2170MHz, 54W RF Power MOSFET | NXP Semiconductors
料号： MRF6S21190HR3 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $95 | $95.00 |
| 10 | $88.4 | $884.00 |
| 100 | $81.5 | $8,150.00 |
| 500 | $75.2 | $37,600.00 |
| 1,000 | $69 | $69,000.00 |
MRF6S21190HR3 概述
A base-station RF power transistor is a specialized MOSFET built for high-frequency, high-power linear amplification. Unlike a logic-level digital MOSFET, an RF power MOSFET like the MRF6S21190HR3 is over-moded to deliver high gain, low feedback capacitance, and excellent thermal conductivity. The device sits at the final stage of a multi-carrier W-CDMA PA, converting DC bias energy into RF energy at the band of interest (2110-2170 MHz, which is the downlink UMTS Band I).
Key features include a single N-channel lateral geometry optimized for high breakdown, an internal input matching network that flattens gain across the 60 MHz band, integrated ESD protection on the gate, and stable thermal performance with a hardened ceramic package. The 2.11-2.17 GHz band is targeted, the drain bias is 28 V, the quiescent current is 1600 mA, the small-signal gain (Gps) is 16 dB, and the rated continuous CW handling matches the 54 W Avg. W-CDMA reference point with significant CW headroom margin.
The lateral N-channel process uses field-plate and source-connected shield techniques to push the breakdown above 65 V while keeping Cds low enough to maintain efficiency at 2.1 GHz. The on-die match focuses on input impedance so that designers can place the part directly on a PCB microstrip launcher without external matching on the gate side.
Typical applications include 2110-2170 MHz UMTS Band I base-station final PAs, multi-carrier W-CDMA amplifiers, WLL/MMDS mid-power links, and other high-linearity PAs in the 2 GHz region. The lateral architecture and high gain make it a strong final-stage choice where ACPR at 54 W Avg. is the headline figure of merit.
When designing, ensure bolt-down torque and thermal interface materials are within the NI-880 footprint datasheet limits and that a harmonic load-pull is performed at Pout = 54 W. Be aware that gain and ACPR are temperature-sensitive and that substrate selection materially influences second-stage harmonic balance.
This page integrates distributor inventory, drop-in alternative cross-references, and field design notes that go beyond the manufacturer datasheet by ranking options on ACPR-friendly pa load-pull margin.
直接替换替代料： MRF6S21190HR3 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MRF6S21190HSR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF6S21050N
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF6S21100N
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF6S21190HR3 最大额定值与电气特性
| 晶体管类型 | Lateral N-Channel RF Power MOSFET |
| Frequency Range | 2110 MHz to 2170 MHz |
| Drain-Source Voltage (VDSS) | 28 V |
| Test Bias Voltage (VDD) | 28 V |
| Quiescent Current (IDQ) | 1600 mA |
| Output Power (Avg. W-CDMA) | 54 W |
| Power Gain (Gps) | 16 dB |
| Configuration | Single, Class AB |
| Drain Current | 1.6 A (IDQ) |
| Test Signal | 3GPP Test Model 1, 64 DPCH, 50% clipping, 3.84 MHz BW, 7.5 dB PAR @ 0.01% CCDF |
| 安装类型 | Surface Mount with bolt-down flange (NI-880 ceramic cavity) |
| 封装 | NI-880H-2L (NI-880 with 2 internal leads) |
| Primary Application | W-CDMA base station final-stage power amplifier |
| Channel Material | Silicon, lateral N-channel enhancement mode |
| Operating Mode | Enhancement Mode |
| RoHS 状态 | Compliant |
MRF6S21190HR3 ni-880h-2l (ni-880 with 2 internal leads) 引脚配置指南
MRF6S21190HR3（ni-880h-2l (ni-880 with 2 internal leads) 封装）的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装，请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。
暂无详细引脚数据： MRF6S21190HR3.
请参阅 数据手册 以查看完整引脚配置。
MRF6S21190HR3 DC SOA (Estimated from datasheet maximums)
典型应用
MRF6S21190HR3 适用于 6 应用s: W-CDMA Base Station Final-Stage PA, Multi-Carrier W-CDMA Power Amplifier, UMTS Band I Repeater / Booster, WLL / Fixed Wireless 2 GHz Link, Public-Safety 2 GHz Band Linear PA, Scientific / Industrial 2.1 GHz Heating Head.
W-CDMA Base Station Final-Stage PA
The MRF6S21190HR3 is the reference-design final-stage transistor for W-CDMA base-station PAs covering 2110-2170 MHz (UMTS Band I downlink). With Pout = 54 W Avg. at 16 dB Gps under 3GPP Test Model 1 (64 DPCH, 50% clipping), and VDD = 28 V / IDQ = 1600 mA bias, it meets the headline figure of merit for that band. Placed between the interstage driver and the isolator/circulator, it dominates the system's ACPR budget; designers should use the NXP load-pull data and tune the harmonic terminations to keep ACLR within spec.
推荐
Multi-Carrier W-CDMA Power Amplifier
The MRF6S21190HR3 supports multi-carrier W-CDMA operation thanks to its high linearity and stable gain under backoff. At 54 W Avg. with 16 dB Gps and 1.6 A IDQ, the part can host two adjacent 5 MHz carriers while staying within the 3GPP spectrum-emission mask. Designers should revisit bias optimization and add output attenuation for the multi-carrier case; the gain stays at 16 dB but the composite ACPR budget tightens and thermal rollback becomes the dominant derating factor.
推荐
UMTS Band I Repeater / Booster
Repeater applications reuse the same W-CDMA Band I downlink 2110-2170 MHz band, so the MRF6S21190HR3 is a direct fit. Operated at lower Pout (typically 10-20 W Avg.) for line-driver duty, the gain stays 16 dB and the headroom above 54 W Pout ratings becomes thermal/linearity insurance. The ceramic NI-880 package and bolt-down mechanical interface are easier to integrate in a sealed outdoor repeater than smaller SMD packages.
推荐
WLL / Fixed Wireless 2 GHz Link
The MRF6S21190HR3 covers the 2 GHz WLL/MMDS region and the 2.11-2.17 GHz UMTS Band I spectrum, making it a useful PA in fixed-wireless customer-premises equipment where 50 W average power is required. Bias at 28 V with 1.6 A IDQ, drive it directly from a low-power modulator and add an isolator before the antenna. Gain of 16 dB is sufficient to close the link without an additional driver stage, reducing BOM count.
推荐
Public-Safety 2 GHz Band Linear PA
Public-safety radios operating in 2 GHz adjacent bands need a linear PA with high ACPR headroom - the MRF6S21190HR3's 16 dB Gps and W-CDMA-class linearity make it a strong candidate. Operate at 25-40 W CW backoff to stay within the safety-mask, drive from a low-power modulator, and use the bolt-down NI-880 with a thermal pad for fanless chassis thermal management. Headroom above 54 W is available as a safety margin for thermal stress.
推荐
Scientific / Industrial 2.1 GHz Heating Head
Industrial RF heating heads operate at 2.1-2.17 GHz and need stable 30-50 W CW power; the MRF6S21190HR3 supports this duty cycle when over-spec'd to keep junction temperature within the datasheet ceiling. With VDD = 28 V and IDQ = 1600 mA, the part delivers >54 W Pout with 16 dB gain under CW drive, giving designers margin for process variation. The ceramic NI-880 package with bolt-down flange is well suited to long-duty-cycle industrial heating service.
推荐
推荐产品汇总
工程参考数据： MRF6S21190HR3 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF6S21190HSR3 | MRF6S21050N | MRF6S21100N |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-880H-2L (ceramic cavity, bolt-down) | NI-880 (ceramic cavity, pre-matched leadframe) | NI-780 (ceramic cavity, bolt-down) | NI-780 (ceramic cavity, bolt-down) |
| Frequency Range | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Output Power (Avg. W-CDMA) | 54 W | 54 W | 10 W | 100 W |
| Drain Bias (VDD) | 28 V | 28 V | 28 V | 28 V |
| Channel Type | Lateral N-Channel enhancement | Lateral N-Channel enhancement | Lateral N-Channel enhancement | Lateral N-Channel enhancement |
| Mounting | Bolt-down flange (2 internal leads) | Bolt-down flange (pre-matched leads) | Bolt-down flange (2 leads) | Bolt-down flange (2 leads) |
| RoHS | Compliant | Compliant | Compliant | Compliant |
关键差异点
- Reference-design W-CDMA Band I final-stage with documented 3GPP TM1 ACPR （对比 MRF6S21190HSR3)
- Higher Pout in same 2110-2170 MHz band when more headroom is needed （对比 MRF6S21100N)
- Lower Pout in same band for interstage or driver duty （对比 MRF6S21050N)
设计说明
At VDD=28 V and 54 W Avg. W-CDMA Pout, estimated at 30% efficiency the MRF6S21190HR3 dissipates about 126 W. The NI-880 ceramic cavity must be bolted to a heatsink with thermal interface material at the manufacturer's recommended torque, and the junction temperature should stay below 175 C (target <150 C) for MTBF margin. Designers should compute Psi_JT from the NXP thermal model and validate with a thermocouple on the flange near the die cavity.
Place the MRF6S21190HR3 with its RF leads directly onto the PCB microstrip launcher to avoid added parasitic inductance; the source-tie (flange) should be grounded with multiple vias stitching the top ground to the second ground layer. Keep the bias feed network isolated from the RF path with quarter-wave stubs at the fundamental and second harmonic. The matched fixture from the datasheet is the recommended starting layout for evaluation.
Do not exceed VDS(max) of 65 V or the VGS(max) rating; design transient suppression on the drain line to protect against load VSWR spikes. Avoid operating below IDQ = 1500 mA because Class AB gain drops fast and ACPR degrades; bias at 1600 mA per the datasheet reference. Do not bypass the harmonic load-pull tuning step - production ACPR is set by these terminations and cannot be recovered with output filtering alone.
合规信息
RoHS compliant per NXP product information. The H suffix indicates lead-free packaging. Request NXP MDDS for full material disclosure including Pb-free die attach verification.
