MRF6S9130HR5 - 27W 880MHz LDMOS RF Power Transistor | NXP
料号： MRF6S9130HR5 ⚠ 最后一次采购| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $33.2 | $332.00 |
| 100 | $28.1 | $2,810.00 |
| 500 | $24.45 | $12,225.00 |
| 1,000 | $21.9 | $21,900.00 |
MRF6S9130HR5 概述
An RF power transistor is a specialized semiconductor that converts DC supply current into a controlled, high-frequency output signal at the antenna feed of a wireless transmitter. Within the cellular base-station hierarchy, this category sits below RF power amplifiers and above general-purpose LDMOS FETs; it inherits noise, gain, and ruggedness figures from RF ICs while occupying the higher-power edge of the macro-cell transmitter chain. LDMOS in particular dominates the sub-3 GHz macro base-station segment because of its high breakdown voltage, good thermal conductivity, and lower cost per watt than GaAs or GaN at sub-1 GHz frequencies.
Key electrical specs include 28 V typical operation (a 68 V-rated breakdown part), 19.2 dB power gain at 880 MHz, 27 W CW output power, and operation across 865-960 MHz. The N-channel enhancement-mode structure simplifies gate-bias generation; a standard 0 to +5 V gate-source bias is sufficient, eliminating negative-voltage rails. The ceramic NI-780H-2L flange package screws directly to the heatsink, providing the low thermal resistance required for continuous CW operation at 27 W.
Architecturally, the lateral MOSFET cell geometry provides high breakdown ruggedness and inherently good linearity, making the part well-suited to N-CDMA and GSM EDGE modulation formats that have tight adjacent-channel leakage (ACLR) and error-vector-magnitude (EVM) masks. The lateral drain structure also exhibits high VSWR tolerance, surviving 10:1 output mismatch at full rated power - critical for production-line test cells where antenna loads can be unpredictable.
Typical applications include 900 MHz GSM/EDGE base-station PA final stages, N-CDMA macro-cell driver and final amplifiers, and multi-carrier amplifier (MCA) modules feeding sector antennas. Its 27 W output supports 2-4 channel macro-cell sectors at moderate-power cell-site configurations.
Designers should bolt the NI-780H-2L flange directly to a copper or aluminum heatsink with a thin layer of thermal compound; forced-air cooling is recommended above 20 W dissipation. Bias sequencing should apply gate voltage before (or simultaneously with) drain voltage to avoid parametric shifts. Input/output matching networks must target 50 ohms at 880-915 MHz with second-harmonic trapping required for spectral-mask compliance.
This page synthesizes distributor stock, parametric substitution candidates, and engineering design context into one concise reference - a layer of practical guidance the bare NXP datasheet does not provide.
直接替换替代料： MRF6S9130HR5 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MRF6S9130HR5 （相同外形与封装尺寸） ——差异在于 Mounting Type, Package / Case, Technology, Transistor Type.
快速对比工具——选择替代料号进行并排对比：
MRFE6S9130HR5
✅ 直接替换📋 参考替代料（不在目录中）
MRF6S9130HR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF6S9130HSR5
✅ 直接替换✓ 有现货
$65 / 个
查看数据手册 →MRF6S9125HR5
✅ 直接替换📋 参考替代料（不在目录中）
MRF6S9046MR1
✅ 直接替换📋 参考替代料（不在目录中）
MRFE6S9045GNR1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF6S9130HR5 最大额定值与电气特性
| 晶体管类型 | N-Channel Enhancement-Mode LDMOS |
| Drain-Source Voltage Rating (VDS) | 68 V |
| Operating Drain Voltage (VDD) | 28 V typical |
| Test Frequency | 880 MHz |
| Operating Frequency Range | 865 MHz to 960 MHz |
| Output Power (CW) | 27 W |
| Power Gain | 19.2 dB |
| Test Bias Current (IDQ) | 950 mA |
| 封装 / 外壳 | NI-780H-2L (ceramic flange) |
| 安装类型 | Chassis / Flange Mount |
| Technology | LDMOS (Laterally Diffused MOS) |
| Polarity | N-Channel |
| Mode | Enhancement Mode |
| Intended Applications | N-CDMA, GSM, GSM EDGE base-station amplifiers |
| Multi-Carrier Capable | Yes (MCA) |
| Lead Free Status | Lead Free |
| Replacement Note | MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3 per PCN12895 |
MRF6S9130HR5 引脚配置
| 引脚 1 | Gate (Input) — RF input / gate bias lead post on NI-780H-2L flange face |
| 引脚 2 | Drain (Output) — RF output / drain bias lead post on NI-780H-2L flange face |
| 引脚 Flange | Source / Thermal Ground — Source contact and primary thermal path via chassis mount |
安全工作区 - DC
典型应用
MRF6S9130HR5 适用于 7 应用s: 900 MHz GSM Base-Station Final-Stage PA, N-CDMA 850/900 Macro-Cell Driver Amplifier, Multi-Carrier Amplifier (MCA) Module, Industrial RF Heating and Plasma Generator, Aerospace / Defense L-Band Transmitter, Cellular Repeater / Booster Output Stage, PMR / DMR 900 MHz Professional Mobile Radio PA.
900 MHz GSM Base-Station Final-Stage PA
The MRF6S9130HR5's 27 W CW output and 19.2 dB power gain at 880 MHz make it a strong choice as the final stage of a 900 MHz GSM/EDGE base-station power amplifier. The 28 V typical VDD draws from the standard 48 V-to-28 V DC-DC converter chain used in macro-cell BTS cabinets; ACLR is preserved by the LDMOS lateral cell geometry, which exhibits good spectral re-growth behaviour under EDGE modulation. Placed between the inter-stage matching network and a microstrip or stripline combiner feeding the antenna, the part replaces a pair of lower-power devices with a single compact flange-mount part, reducing PCB real-estate and combiner insertion loss by ~0.3 dB. The 950 mA IDQ bias point is straightforward to set with a single constant-current source or a low-cost gate-bias regulator.
推荐
N-CDMA 850/900 Macro-Cell Driver Amplifier
In an N-CDMA 850 or 900 MHz macro-cell transmit chain the MRF6S9130HR5 functions as either driver or final PA with an OIP3 around +48 dBm - sufficient for multi-carrier IS-95/CDMA2000 lineups. The 68 V VDS breakdown grants high VSWR survivability during antenna-feeder faults, surviving 10:1 mismatch at full Pout without parametric drift. Placed between a pre-driver MMIC and the cavity-combiner input, the part maintains ACLR under 3-carrier drive because LDMOS inherent linearity avoids cross-modulation. Thermal management is straightforward: bolt the NI-780H-2L flange to a copper spreader with thermal compound, with forced-air cooling at 20 W+ dissipation.
推荐
Multi-Carrier Amplifier (MCA) Module
Multi-carrier amplifier modules combine two or more carriers into a single broadband PA, and the MRF6S9130HR5 is specifically characterized for MCA duty cycles per the NXP datasheet. With 27 W Pout and the lateral LDMOS cell geometry, the part delivers high linearity across the 865-960 MHz passband, supporting four-carrier GSM or dual-band N-CDMA combined output without per-carrier Pout back-off beyond thermal headroom. Mounted in a sector amplifier housing with a multi-carrier combiner on the input side and a low-loss duplexer on the output, the MRF6S9130HR5 simplifies MCA topology by replacing four lower-power parts with one. LDMOS bias stability over temperature preserves gain flatness across the operating band, reducing per-carrier calibration work.
推荐
Industrial RF Heating and Plasma Generator
The MRF6S9130HR5 is reused outside its cellular heritage in 915 MHz industrial ISM RF heating and plasma excitation applications, where 27 W CW output into a resonant cavity or plasma load is sufficient for small-scale material processing. The 28 V VDD makes it easy to bus from standard industrial 32 V or 48 V rectified rails, and the 68 V breakdown withstands the aggressive impedance swings seen in plasma-resonance chambers. Mounted on a liquid-cooled cold plate, the part runs continuously at full rated Pout. Designers do however need to add a 7th-order lowpass filter between the drain and the applicator to satisfy FCC Part 18 ISM spectral purity rules.
推荐
Aerospace / Defense L-Band Transmitter
Within 865-960 MHz L-band telemetry and drone-control transmitter lineups, the MRF6S9130HR5's high VSWR survivability and 68 V breakdown make it a rugged final-stage candidate for tactical radio uplinks. The enhancement-mode gate structure simplifies the cockpit-grade power-supply design because no negative gate rail is needed - a key advantage when a single-ended 28 V bus powers the entire RF chain. Mounted in a sealed RF compartment with a conductive elastomer gasket to the heatsink flange, the part delivers telemetry links at multi-Watt EIRP through cavity filters. Note that for mission-critical defense programs, NXP's wider-temp MRFE6S9130 family is preferred over the MRF6S9130HR5 due to last-time-buy status.
推荐
Cellular Repeater / Booster Output Stage
Off-air 900 MHz cellular repeaters and signal boosters use the MRF6S9130HR5 as a final uplink/downlink PA to re-transmit cellular coverage inside buildings or tunnels. The 27 W output is suitable for small-to-mid-size venue boosters feeding a DAS head-end, with the 19.2 dB gain keeping the upstream driver-stage gain budget low. Placed between a SAW filter and a directional coupler feeding the indoor antenna array, the part amplifies the up-converted downlink signal with EVM preserved for LTE signals. The NI-780H-2L flange bolts directly to a die-cast aluminum chassis that doubles as both heatsink and RF shield, and the LDMOS lineage ensures stable gain across the full repeater AGC loop.
推荐
PMR / DMR 900 MHz Professional Mobile Radio PA
Professional Mobile Radio (PMR) and Digital Mobile Radio (DMR) repeater stations at 900 MHz benefit from the MRF6S9130HR5's 27 W CW output and tight 865-960 MHz band coverage. The LDMOS gate achieves fast T/R switching - critical for DMR two-slot TDMA duty cycles - with no negative-voltage gate drive, simplifying the half-duplex switch matrix. Placed between the DMR modem's RF output and a duplex filter feeding the base-station antenna, the part preserves symbol-rate EVM while drawing 28 V from the typical PMR cabinet's primary 48 V bus. Its high ACLR margin supports tight spectral masks mandated by ETSI EN 300 086 for emergency-services repeaters.
推荐
推荐产品汇总
工程参考数据： MRF6S9130HR5 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRFE6S9130HR5 | MRF6S9130HR3 | MRF6S9130HSR5 | MRF6S9125HR5 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L | NI-780H-2L - same | NI-780H-2L - same | NI-780S-2L - same flange family | NI-780H-2L - same |
| Output Power (CW) | 27 W | ~27 W | 27 W | 27 W | ~25 W |
| Power Gain | 19.2 dB | ~19 dB | 19.2 dB | 19.2 dB | ~19 dB |
| Operating Frequency | 865-960 MHz | 865-960 MHz | 865-960 MHz | 865-960 MHz | 865-960 MHz |
| Drain Voltage (VDD) | 28 V | 28 V | 28 V | 28 V | 28 V |
| VDS Breakdown | 68 V | 68 V | 68 V | 68 V | 68 V |
| Test Bias Current (IDQ) | 950 mA | ~950 mA | 950 mA | 950 mA | ~900 mA |
| Lifecycle Status | Last Time Buy | Active (NXP PCN12895 successor) | Last Time Buy | Last Time Buy | Last Time Buy |
关键差异点
- NXP-official PCN12895 successor with active lifecycle （对比 MRF6S9130HR3)
- Higher 27 W output for sector head-room （对比 MRF6S9125HR5)
- Same die, alternate lead form for module assembly （对比 MRF6S9130HSR5)
设计说明
Estimated: at 28 V VDD and 27 W CW Pout, RF PA efficiency in LDMOS at 880 MHz is typically 55%, so DC input power is ~49 W and dissipation is ~22 W. Use the NI-780H-2L flange bolted to a copper or aluminum heatsink with a thin thermal-interface compound layer; forced-air cooling (~2 m/s) is recommended above 20 W dissipation. Mounting torque should follow the NXP datasheet mechanical drawing (typically 0.7 N-m to avoid ceramic fracture).
Always apply gate bias before (or simultaneously with) drain voltage; never hot-switch the drain with no gate bias applied - this can cause parametric shift or device damage. Use a gate bleed resistor (~10 kohm) from gate to source to keep the part off during power-up transients, and decouple the gate-bias line with a 100 nF + 10 uF capacitor network to suppress RF leakage into the bias supply.
Use a grounded coplanar waveguide or microstrip layout with 50-ohm characteristic impedance at the gate and drain lead posts; keep input and output traces physically separate to avoid positive feedback and oscillation. Place a 4:1 or higher stability-resistance network (a few ohms in series with a ferrite bead) at the gate lead if oscillation is observed on the prototype bench. Substrate should be RO4350B or RO4003C for repeatable RF performance, with a continuous ground plane on layer 2.
Per NXP PCN12895 the MRF6S9130 family is being migrated to the MRFE6S9130 family; the two share the same NI-780H-2L mechanical footprint and same RF electrical interface, so existing PCBs will accept the E-suffix part without re-layout. For new designs, choose the MRFE6S9130HR5 to avoid re-spin later when the non-E version reaches end-of-life.
合规信息
RoHS compliant per NXP/Freescale datasheet. Halogen-free status not explicitly stated in the verified datasheet extract; RF LDMOS flange packages are typically not declared halogen-free. Not AEC-Q100 - this is an RF power transistor, not an automotive IC.