MRF6S9130HR5 vs MRF6S9130HSR5 对比
详细并排对比 MRF6S9130HR5 出自 NXP Semiconductors 和 MRF6S9130HSR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRF6S9130HR5 | MRF6S9130HSR5 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 最后采购期 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $21.90 | $65.00 |
| 晶体管类型 | N-Channel Enhancement-Mode LDMOS | LDMOS (N-Channel) |
| Drain-Source Voltage Rating (VDS) | 68 V | — |
| Operating Drain Voltage (VDD) | 28 V typical | — |
| Test Frequency | 880 MHz | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Output Power (CW) | 27 W | — |
| Power Gain | 19.2 dB | — |
| Test Bias Current (IDQ) | 950 mA | — |
| 封装 / 外壳 | NI-780H-2L (ceramic flange) | NI-780S |
| 安装类型 | Chassis / Flange Mount | Chassis Mount / Flange |
| Technology | LDMOS (Laterally Diffused MOS) | RF Power MOSFET |
| Polarity | N-Channel | — |
| Mode | Enhancement Mode | — |
| Intended Applications | N-CDMA, GSM, GSM EDGE base-station amplifiers | — |
| Multi-Carrier Capable | Yes (MCA) | — |
| Lead Free Status | Lead Free | — |
| Replacement Note | MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3 per PCN12895 | — |
| Frequency | — | 880 MHz |
| Gain | — | 19.2 dB |
| Output Power (P1dB) | — | 27 W (CW) |
| Test Voltage (Vdd) | — | 28 V |
| Test Current (Idq) | — | 950 mA |
| Voltage Rated (Vdss) | — | 68 V |
| Supplier Device Package | — | NI-780S |
| Application | — | N-CDMA, GSM, GSM EDGE base station |
| RoHS 状态 | — | [DATA_NEEDED: verify against specific lot] |
| Lead Free | — | Yes (per NXP migration note) |
| Part Status | — | Obsolete - replaced by MRFE6S9130HSR5 (per PCN12895) |
| Manufacturer | — | NXP USA Inc. (formerly Freescale Semiconductor) |