MRF8P20160HSR3 - 37W RF Power MOSFET 1880-2025 MHz | NXP
料号： MRF8P20160HSR3 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $95 | $95.00 |
| 10 | $86.5 | $865.00 |
| 50 | $78.2 | $3,910.00 |
| 100 | $71.4 | $7,140.00 |
| 250 | $64.8 | $16,200.00 |
MRF8P20160HSR3 概述
An RF power MOSFET is a laterally-diffused metal-oxide-semiconductor transistor optimized to deliver high RF output power at VHF/UHF/microwave frequencies while maintaining acceptable efficiency and linearity. The device sits in the hierarchy: RF transistor -> power transistor -> discrete semiconductor -> power amplifier building block. In a base-station lineup the MRF8P20160HSR3 typically operates as the final-stage or driver PA, converting DC power into modulated RF energy while the system controller handles Doherty combining, bias sequencing and digital predistortion.
Key specifications include 1880-2025 MHz operating band, 37 W average output power (single-carrier W-CDMA), 28 V drain supply, 16.5 dB power gain at 1.92 GHz, and -0.5 dB AM-AM compression at rated Pout. The device also integrates ESD protection, simplified biasing, and broadband matching tolerance suitable for Class AB or Class C operation across common cellular modulation formats.
The MRF8P20160HSR3 uses NXP's HV8 lateral MOSFET process technology, providing high breakdown voltage and a thermally-enhanced ceramic NI-780S-4 package. This package is designed for direct screw-down mounting to a heatsink with low thermal resistance, enabling continuous CW and pulsed operation in demanding base-station thermal environments.
Typical applications include W-CDMA, LTE and TD-SCDMA base-station power amplifiers in the 1.88-2.025 GHz band, Doherty final-stage amplifiers for macro-cell radios, and broadband driver stages for higher-power push-pull configurations. The part is well matched to standard cellular PA reference designs and works with NXP evaluation fixtures characterized at 2025 MHz.
When designing with this device, careful attention to the PCB layout, ground-plane continuity, and harmonic-filter design is required to meet spectral-emission masks. Use of NXP's MRF8P20160H datasheet application notes is recommended for Doherty amplifier implementation, bias sequencing and thermal management guidance.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping RF engineers select the right part faster.
直接替换替代料： MRF8P20160HSR3 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MRF8P20160HSR3 （相同外形与封装尺寸） ——差异在于 Application, Manufacturer, Transistor Type.
快速对比工具——选择替代料号进行并排对比：
MRF8P20160HR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF8P20180HSR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF8P20140HSR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF7P20140HSR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF8P20160HSR5
✅ 直接替换📋 参考替代料（不在目录中）
MRF8P20180HR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF8P20160HSR3 最大额定值与电气特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8P20160HSR3 |
| 晶体管类型 | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | HV8 lateral RF MOSFET |
| Frequency Band | 1880 MHz to 2025 MHz |
| Output Power (Average) | 37 W (Single-Carrier W-CDMA) |
| Drain Supply Voltage (VDD) | 28 Vdc |
| Quiescent Drain Current (IDQA) | 550 mA |
| Power Gain (Typ) | 16.5 dB at 1.92 GHz |
| Test Frequency | 1.92 GHz |
| 封装 / 外壳 | NI-780S-4 (ceramic flanged) |
| 安装方式 | Screw-down flange (through-hole) |
| Operating Class | Class AB or Class C |
| Junction Temperature (Max) | 200 C (S-prefix sample-tested) |
| Application | W-CDMA / LTE / TD-SCDMA base-station PA |
MRF8P20160HSR3 引脚配置
| 引脚 1 | Gate — RF input gate lead (input side, left) |
| 引脚 2 | Gate-Bias — Gate bias / decoupling lead (input side, right) |
| 引脚 3 | Drain-Bias — Drain bias / decoupling lead (output side, left) |
| 引脚 4 | Drain — RF output drain lead (output side, right) |
| 引脚 FLANGE | Source / Thermal — Source and thermal ground (ceramic flange, two mounting holes) |
MRF8P20160HSR3 安全工作区
典型应用
MRF8P20160HSR3 适用于 6 应用s: W-CDMA Macro-Cell Base-Station PA, LTE Band 1 / Band 2 / Band 25 Base Station, TD-SCDMA Repeater / Small Cell PA, Doherty Amplifier Final Stage, Driver Stage for Higher-Power PAs, Industrial / Test RF Power Amplifier.
W-CDMA Macro-Cell Base-Station PA
The MRF8P20160HSR3 is engineered for 1880-2025 MHz W-CDMA base-station final-stage PAs. Its 37 W average output power at 28 V VDD and 16.5 dB gain at 1.92 GHz match the typical macro-cell downlink power budget for 3G/4G radios. Placed after a driver stage and a Doherty splitter, the device delivers linear power while maintaining the spectral mask required for ACPR compliance. The NI-780S-4 ceramic flange enables direct screw-down heatsink mounting for continuous-duty base-station operation, and the 200 C S-prefix junction rating provides margin for elevated-temperature outdoor cabinet environments.
推荐
LTE Band 1 / Band 2 / Band 25 Base Station
LTE base-station radios in the 1880-2025 MHz range (Bands 1, 2, 25) use the MRF8P20160HSR3 as a final-stage PA in Doherty or single-ended configurations. With 37 W average power and high linearity, it supports 4x4 MIMO and multi-carrier LTE downlink signals. Combined with digital predistortion (DPD), the part achieves ACLR performance suitable for macro-cell deployment. The NI-780S-4 package is compatible with NXP's reference-design evaluation fixtures characterized at 2025 MHz, simplifying the RF front-end design cycle.
推荐
TD-SCDMA Repeater / Small Cell PA
TD-SCDMA systems at 1880-1920 MHz and 2010-2025 MHz can leverage the MRF8P20160HSR3 in repeater and small-cell PA stages. The device's 16.5 dB gain and 37 W Pout provide the headroom required for medium-power small-cell radios operating close to end users, while its broadband matching tolerance accommodates multiple TDD bands without retuning. The lateral MOSFET process gives good thermal stability under TDD burst-mode duty cycles common in picocell applications.
推荐
Doherty Amplifier Final Stage
The MRF8P20160HSR3 is widely deployed as both carrier and peaking devices in Doherty amplifier topologies for high-efficiency base-station PAs. Its 37 W average Pout, 16.5 dB gain, and broadband impedance tolerance support Doherty combining networks that target 40-45% efficiency at 6-8 dB back-off. The NI-780S-4 flange allows matched-length carrier/peaking layouts with low thermal gradient, and the high junction-temperature rating handles the peaking-stage thermal spikes during 6 dB+ back-off operation.
推荐
Driver Stage for Higher-Power PAs
Beyond its final-stage role, the MRF8P20160HSR3 is used as a driver for higher-output NXP HV8 series PAs (such as the 80-100 W parts). Its 37 W output and 16.5 dB gain give it the gain-budget headroom to drive a final stage that requires only modest input power, simplifying the overall PA lineup. The device's broadband response simplifies inter-stage matching networks and supports multi-band operation from a common driver.
推荐
Industrial / Test RF Power Amplifier
Industrial and laboratory RF test amplifiers in the 1.9 GHz band use the MRF8P20160HSR3 as a robust final-stage device where reliability and continuous-duty operation outweigh absolute linearity. The 200 C S-prefix Tj rating and ceramic NI-780S-4 package suit demanding thermal environments such as burn-in chambers and EMC test amplifiers that need 30-40 W of CW output power across the 1880-2025 MHz band with conservative derating.
推荐
推荐产品汇总
工程参考数据： MRF8P20160HSR3 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF8P20160HR3 | MRF8P20180HSR3 | MRF8P20140HSR3 | MRF7P20140HSR3 | MRF8P20160HSR5 |
|---|---|---|---|---|---|---|
| Package | NI-780S-4 | NI-780S-4 - same | NI-780S-4 - same | NI-780S-4 - same | NI-780S-4 - same | NI-780S-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Avg) | 37 W | 37 W (same) | 43 W (+16%) | 24 W (-35%) | 24 W (-35%) | 37 W (same) |
| Frequency Band | 1880-2025 MHz | 1880-2025 MHz (same) | 1880-2025 MHz (same) | 1880-2025 MHz (same) | 1930-2025 MHz (narrower) | 1880-2025 MHz (same) |
| Drain Voltage (VDD) | 28 V | 28 V (same) | 28 V (same) | 28 V (same) | 28 V (same) | 28 V (same) |
| Junction Temperature Max | 200 C (S-prefix) | 175 C (standard) | 200 C (S-prefix) | 200 C (S-prefix) | 200 C (S-prefix) | 200 C (S-prefix) |
| Process Technology | HV8 lateral | HV8 lateral (same) | HV8 lateral (same) | HV8 lateral (same) | HV7 lateral (older) | HV8 lateral (same) |
关键差异点
- S-prefix 200 C junction rating versus 175 C standard （对比 MRF8P20160HR3)
- Higher output power within the same NI-780S-4 footprint （对比 MRF8P20140HSR3)
- Modern HV8 process technology versus older HV7 generation （对比 MRF7P20140HSR3)
设计说明
The NI-780S-4 ceramic flange must be mounted to a heatsink with a thermal compound (e.g. Bergquist Hi-Flow or ShinEtsu X-23-7921-25) and tightened to the recommended torque (typically 1.5-2.0 kgf-cm on the two M2 mounting screws). Under 37 W CW output at 28 V VDD and 55% drain efficiency, internal dissipation is approximately 30 W. Estimated: with a typical junction-to-flange thermal resistance of approximately 0.25 C/W for NI-780S-4, the junction-to-heatsink temperature rise is about 7.5 C at full Pout, so the heatsink thermal resistance must be sized to keep Tj below the 200 C S-prefix rating with adequate margin for base-station outdoor cabinet ambient temperatures up to 85 C.
Use a low-loss substrate such as Rogers RO4350B or RO4003C with 10-20 mil thickness for the input and output matching networks. Place the gate and drain leads with 50 ohm microstrip lines directly from package lead to first matching element, minimizing lead length and parasitic inductance. A continuous ground plane beneath the device flange, with vias stitched around the package perimeter every 200 mils, is required to maintain RF grounding and thermal conductivity. Use NXP's MRF8P20160H reference design 2025 MHz Doherty test fixture layout as the starting point.
Common pitfalls when using the MRF8P20160HSR3 include: (1) exceeding the 200 C junction temperature on the S-prefix rating or 175 C on the standard part without thermal shutdown; (2) failing to add sufficient drain and gate bias decoupling (typically 10 uF electrolytic plus 100 nF and 10 pF ceramic) close to the bias pins; (3) driving the device into saturation under high PAR signals without DPD, which degrades ACPR; (4) using lead-free solder pastes without proper profile when reworking ceramic flanged packages, leading to thermal-shock cracks in the ceramic; and (5) assuming the S-prefix variant has identical RF performance to the R3 standard - the S device is sample-tested for higher-temperature reliability, not for higher RF gain or Pout.
For Doherty amplifier layouts, the carrier and peaking MRF8P20160HSR3 devices must be placed symmetrically about the combiner with matched electrical length from each drain to the combining point. Quarter-wave microstrip sections at 2025 MHz are typically used for impedance transformation between the device output and the combiner. Maintain at least 6 mm spacing between the two devices to avoid thermal coupling. The harmonic terminations (2f0 and 3f0) at each drain should be implemented as low-pass filter stubs within 5 mm of the drain lead for spectral-mask compliance.
合规信息
RF power MOSFETs in ceramic flanged packages are frequently sold as non-RoHS or with exemption. RoHS, REACH, and lead-free status not explicitly stated in the public datasheet excerpt provided; consult NXP product environmental compliance documentation for definitive certification.
