MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
料号： MRF8P9040NR1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $35.2 | $352.00 |
| 100 | $31.8 | $3,180.00 |
| 500 | $27.4 | $13,700.00 |
| 1,000 | $24.95 | $24,950.00 |
MRF8P9040NR1 概述
A lateral N-channel enhancement-mode RF power MOSFET is a transistor whose conducting channel is formed at the surface of a silicon die and whose carrier concentration is increased by applying a positive gate-to-source voltage. This structure gives RF designers a high-frequency, high-power gain block that scales linearly when driven in Class AB and is rugged enough for Class C cellular modulation formats. RF power MOSFETs belong to the broader discrete-semiconductor hierarchy: MOSFET -> power MOSFET -> RF power MOSFET -> base-station PA transistor -> semiconductor device.
Key features include broadband 728-960 MHz coverage in a single part, 28 V supply operation that simplifies gate-bias design, integrated ESD protection, high peak-to-average ratio tolerance suited to LTE multi-carrier signals, and an air-cavity ceramic-style package (overmolded WB-4) that provides a low thermal-resistance path from die to heatsink. The lateral architecture supports high gain (19.1 dB at 960 MHz) without sacrificing ruggedness against load VSWR mismatch.
The die uses NXP's HV8 lateral MOSFET process technology, optimized for cellular infrastructure PA stages. The drain is on the package flange for direct bolt-down heatsinking; the gate and source are wire-bonded through the package leads. The internal matching networks at the input and output of the reference design simplify board-level integration into Doherty or single-ended PA lineups.
Typical applications include 700-1000 MHz cellular base-station PAs, CDMA/W-CDMA/LTE driver and final stages, repeaters, and broadband industrial/scientific RF power amplifiers. Designers use it as the final-stage transistor in macro base stations or as a driver for higher-power MRF8PxxxNR1 siblings in multi-way Doherty configurations.
When designing with this part, mount the flange directly to a copper or aluminum spreader with proper thermal compound. Maintain drain-supply decoupling close to the lead, and bias the gate from a sequenced voltage control set that ramps drain first, then gate, to avoid device stress.
This page synthesizes real distributor pricing, drop-in pin-compatible alternatives, and practical PA design notes not collected in the manufacturer datasheet, helping RF engineers evaluate and source the part quickly.
直接替换替代料： MRF8P9040NR1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MRF8P9040NR1 （相同外形与封装尺寸） ——差异在于 Technology.
快速对比工具——选择替代料号进行并排对比：
MRF8P9040GNR1
✅ 直接替换📋 参考替代料（不在目录中）
MRF8P9040NBR1
✅ 直接替换📋 参考替代料（不在目录中）
MRF8P9040NR1
✅ 直接替换✓ 有现货
$24.95 / 个
查看数据手册 →MRF8P9040N
✅ 直接替换📋 参考替代料（不在目录中）
MRF6P9040NR1
✅ 直接替换📋 参考替代料（不在目录中）
BLF8G10LS-160
✅ 直接替换📋 参考替代料（不在目录中）
MRF8P9040NR1 最大额定值与电气特性
| Manufacturer | NXP Semiconductors |
| 晶体管类型 | N-Channel Lateral MOSFET (RF Power) |
| Technology | HV8 Lateral N-Channel Enhancement-Mode |
| Operating Frequency Range | 728 MHz to 960 MHz |
| Drain-Source Voltage (Vdss) Max | 70 V |
| Continuous Drain Current (Id) | 320 mA (per DigiKey listing) |
| Test Drain Supply Voltage | 28 V |
| Output Power (Pout) Avg | 4.0 W (CW / modulated at 28 V, 960 MHz) |
| Power Gain (Gps) at 960 MHz | 19.1 dB |
| 封装 | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) |
| 安装类型 | Surface Mount / Flange Mount |
| 引脚数量 | 4 (Drain on flange) |
| Modulation Formats Supported | CDMA, W-CDMA, LTE |
| PA Topology Suitability | Class AB, Class C |
| MSL 等级 | 3 |
| Lead-Free | Yes (per typical NXP HV8 family) |
MRF8P9040NR1 引脚配置
| 引脚 1 | Gate — Gate bias input (Vgs) |
| 引脚 2 | Source — Source (ground-referenced RF return) |
| 引脚 3 | Source — Source (ground-referenced RF return) |
| 引脚 4 | Drain — Drain (28 V Vdd) - bonded to package flange |
| 引脚 Flange | Drain — Drain flange for heatsink mounting and bolt-down |
MRF8P9040NR1 安全工作区 (DC)
典型应用
MRF8P9040NR1 适用于 6 应用s: LTE 900 MHz Base-Station Final Stage, W-CDMA 850 MHz Macro-Cell Driver Stage, 700 MHz Public-Safety Band Repeater Amplifier, Industrial/Scientific RF Power Amplifier (ISM-900), CDMA 800 MHz Base-Station Output Stage, Broadband RF Power Lab Source (Test & Measurement).
LTE 900 MHz Base-Station Final Stage
The MRF8P9040NR1's 4.0 W average output at 28 V and 19.1 dB gain make it well suited as the final PA stage in small-cell or repeater LTE base stations operating in the 900 MHz band. The lateral HV8 architecture tolerates LTE's high peak-to-average ratios (8-12 dB PAPR) without gain compression in adjacent resource blocks, preserving EVM and ACLR. Designers place the part at the antenna-side end of a Doherty or single-ended PA lineup, biased in Class AB at Idq around 100-200 mA. The TO-272 WB-4 flange bolts directly to a copper spreader, dropping junction temperature and enabling continuous 4 W average with proper thermal compound. Compared with a discrete BJT alternative, the MOSFET's higher input impedance simplifies the driver-stage design and eliminates base-current bias networks.
推荐
W-CDMA 850 MHz Macro-Cell Driver Stage
The MRF8P9040NR1's 19.1 dB gain at 960 MHz delivers high linearity and gain when used as a driver stage feeding a higher-power final PA in W-CDMA 850 MHz macro-cell base stations. The 28 V drain supply matches standard macro-cell PA bias rails, simplifying the power-conversion section. Its broadband 728-960 MHz coverage lets the same driver stage serve both 850 MHz cellular and 700 MHz public-safety bands with minor matching-network adjustments. The lateral MOSFET's inherent ruggedness handles the W-CDMA 3.5 dB PAPR without load-pull re-tuning, and its drain-flange TO-272 package provides the low thermal resistance required for continuous downlink transmission. Reference designs in NXP datasheet MRF8P9040N show typical Pout of 4 W average at 2-3% EVM under W-CDMA modulation.
推荐
700 MHz Public-Safety Band Repeater Amplifier
The MRF8P9040NR1 covers the lower edge of its 728-960 MHz band at 728 MHz, making it a candidate for public-safety and LTE Band 14 (700 MHz) repeater amplifiers. Its broadband response reduces the number of band-specific amplifier modules a repeater OEM must qualify, lowering inventory and qualification cost. The 4 W average output is sufficient to drive the final PA stage or feed a bandpass-filtered antenna distribution network in indoor-coverage repeaters. The lateral MOSFET's high gain (19.1 dB) compresses the BOM by reducing the number of driver stages between the transceiver and antenna. Mounting on a copper spreader with proper thermal interface material keeps the junction within safe limits at continuous duty cycle.
推荐
Industrial/Scientific RF Power Amplifier (ISM-900)
The 902-928 MHz ISM band overlaps the MRF8P9040NR1's operating range, and the part's 4 W average and 19.1 dB gain suit industrial RF power amplifiers used in manufacturing, material-heating, and process-control applications. Class C operation can be used where linearity is not required (e.g., CW or on-off-keyed industrial heating loads), extracting higher efficiency than Class AB. The TO-272 WB-4 air-cavity package is robust against the vibration and thermal cycling typical of industrial environments. Designers use it as the final PA in 900 MHz RFID interrogators, license-free industrial telemetry transmitters, and scientific instrumentation such as plasma generators.
推荐
CDMA 800 MHz Base-Station Output Stage
The MRF8P9040NR1 was originally characterized for CDMA base-station output stages in the 800-900 MHz cellular uplink and downlink bands. Its lateral MOSFET architecture provides the gain and linearity required for IS-95 and CDMA2000 1xEV-DO modulation at 28 V. At 4 W average with 19.1 dB gain, the part serves as the final PA in small-cell or pico-cell base stations, or as the driver for a higher-power MRF8PxxxNR1 sibling in macro-cell applications. Its broadband 728-960 MHz tuning simplifies CDMA multi-carrier PA design by reducing matching-network reconfiguration between adjacent carrier slots.
推荐
Broadband RF Power Lab Source (Test & Measurement)
The MRF8P9040NR1's wide 728-960 MHz tuning range and 4 W average output make it a useful RF power source in laboratory test equipment such as signal generators, EMC test amplifiers, and over-the-air (OTA) chamber boosters. Engineers can sweep the entire 700-1000 MHz cellular band with a single matched circuit, accelerating compliance and pre-conformance testing for wireless devices. The drain-flange TO-272 package simplifies thermal management in continuous-wave test operation. NXP's reference design supports CW and modulated drive, enabling ACLR, EVM, and harmonic-distortion characterization across the band.
推荐
推荐产品汇总
工程参考数据： MRF8P9040NR1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF8P9040GNR1 | MRF8P9040NBR1 | MRF6P9040NR1 | BLF8G10LS-160 |
|---|---|---|---|---|---|
| Package | TO-272 WB-4 | TO-272 WB-4 - same | TO-272 WB-4 - same | TO-272 WB-4 - same | SOT539 (flange-mount LDMOS) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon |
| Frequency Range | 728-960 MHz | 728-960 MHz | 728-960 MHz (wideband-optimized) | 728-960 MHz | 920-960 MHz |
| Drain Supply (Vdd) | 28 V | 28 V | 28 V | 28 V | 28-32 V |
| Drain-Source Voltage (Vdss) Max | 70 V | 70 V | 70 V | ~65 V (HV6 process) | 65-70 V |
| Modulation Support | CDMA / W-CDMA / LTE | CDMA / W-CDMA / LTE | CDMA / W-CDMA / LTE | CDMA / W-CDMA / LTE | W-CDMA / LTE |
关键差异点
- Same-die family with gain-optimized sibling （对比 MRF8P9040GNR1)
- Lateral HV8 process technology （对比 MRF6P9040NR1 (HV6))
- Pin-compatible with legacy Freescale stock （对比 Freescale-branded MRF8P9040NR1 (via Rochester Electronics))
设计说明
Mount the TO-272 WB-4 flange directly to a copper or aluminum spreader using a high-quality thermal interface material (e.g., thermal grease or indium foil). At 4 W average output with about 50% efficiency, the part dissipates roughly 4 W as heat. Keep the flange temperature below 100 C to maintain reliable junction operation. Estimated: Pdiss = Pout * (1/eta - 1) = 4 W * (1/0.5 - 1) = 4 W at 50% efficiency; at lower efficiency (e.g., 40%) dissipation rises to ~6 W.
Use NXP's reference PCB layout from datasheet MRF8P9040N. Place the gate and drain matching networks on low-loss substrate (Rogers RO4350B or equivalent). Keep the gate-bias trace away from the drain RF path to prevent feedback oscillation. Use multiple vias under the source leads to maintain a low-inductance ground return.
Sequence the bias supplies: bring Vdd (28 V) up first, then ramp Vgs to the quiescent current setpoint. Per NXP datasheet MRF8P9040N, reverse sequencing stresses the die and may degrade long-term reliability. Use a dedicated gate-bias regulator with soft-start to avoid inrush overshoot.
Do not exceed Vdss of 70 V (including load-mismatch transients). Use a drain TVS or clamp network for high-VSWR antenna environments. The 'NR1' suffix denotes tape-and-reel packaging - ensure your pick-and-place tool handles the TO-272 WB-4 footprint and reel orientation correctly.
合规信息
RoHS and REACH status for MRF8P9040NR1 were not explicitly stated in the verified web data; marked unknown. Lead-free is typical for NXP HV8 family per datasheet prefix conventions. AEC-Q100 not applicable (this is an RF power MOSFET, not an automotive-qualified IC).
