MRF8P9040NR1 vs MRF8S9220HSR3 对比

详细并排对比 MRF8P9040NR1 出自 NXP Semiconductors 和 MRF8S9220HSR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF8P9040NR1 MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors

MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors

MRF8P9040NR1 ✓ 量产中
NXP Semiconductors
MRF8S9220HSR3 MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 ✓ 量产中

规格对比

参数 MRF8P9040NR1 MRF8S9220HSR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $24.95 $96.80
Manufacturer NXP Semiconductors —
晶体管类型 N-Channel Lateral MOSFET (RF Power) —
Technology HV8 Lateral N-Channel Enhancement-Mode LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode
Operating Frequency Range 728 MHz to 960 MHz —
Drain-Source Voltage (Vdss) Max 70 V —
Continuous Drain Current (Id) 320 mA (per DigiKey listing) —
Test Drain Supply Voltage 28 V —
Output Power (Pout) Avg 4.0 W (CW / modulated at 28 V, 960 MHz) —
Power Gain (Gps) at 960 MHz 19.1 dB —
封装 TO-272 WB-4 (air-cavity overmold, 4 lead + flange) —
安装类型 Surface Mount / Flange Mount Surface Mount / Flange Mount
引脚数量 4 (Drain on flange) —
Modulation Formats Supported CDMA, W-CDMA, LTE —
PA Topology Suitability Class AB, Class C —
MSL 等级 3 —
RoHS 状态 [DATA_NEEDED: RoHS status] —
Lead-Free Yes (per typical NXP HV8 family) —
Frequency Range — 920 MHz to 960 MHz
Output Power (Avg, W-CDMA) — 65 W
Operating Drain Voltage (VDD) — 28 V (typical)
Drain-Source Voltage Rating (VDS max) — 70 V
Power Gain (typ) — 19.4 dB
Test Drain Current — 1.6 A
Drain Efficiency (typ) — [DATA_NEEDED: drain efficiency %]
封装 / 外壳 — NI-780S (Case 465-06, Style 1), ceramic
Package Dimensions (L x W x H) — 20.7 mm x 9.91 mm x 4.32 mm
Configuration — Single-ended, 1-carrier W-CDMA
工作结温 — -65 C to +225 C
Lead-Free / RoHS — Lead Free (per DigChip listing)
Modulation Support — W-CDMA, CDMA, LTE (Class AB / Class C)

数据手册与资源

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