NCV68261MTWAITBG-GEVB - Ideal Diode Controller Eval Board | onsemi
料号： NCV68261MTWAITBG-GEVB ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1 | $1.00 |
| 1 | $1 | $1.00 |
NCV68261MTWAITBG-GEVB 概述
An ideal diode controller is a power management IC that drives external N-channel MOSFETs to emulate a diode with near-zero forward voltage drop. In the power path hierarchy (ideal diode controller -> power switch driver -> power management IC), it replaces conventional power rectifier diodes and mechanical switches, which waste power as heat. The NCV68261 sets the ON/OFF state of one or two external N-channel MOSFETs based on the state of the Enable pin and the input-to-drain differential voltage polarity, blocking reverse current and protecting downstream electronics against reversed battery connections.
Key features of the NCV68261 family include reverse polarity protection, ideal diode operation with fast reverse-current blocking, and an optional high side switch mode controlled by the Enable pin. Automotive-grade qualification supports 12 V and 24 V vehicle electrical systems, making the controller suited to battery-fed power rails where low forward drop directly reduces conduction losses and heat sink requirements.
The evaluation board ships pre-populated with the NCV68261MTWAITBG controller and the external MOSFET network, providing access to input, output, enable, and gate nodes for instrumentation. Engineers can measure forward voltage drop, reverse-recovery blocking time, quiescent current, and transient response under realistic load conditions. It also demonstrates both basic configurations described in the datasheet: the ideal diode application and the reverse polarity protection plus high side switch application.
Typical evaluation targets include automotive battery reverse protection modules, industrial 24 V supply front ends, and low-loss ORing of redundant supplies. Board bring-up with the NCV68261MTWAITBG-GEVB shortens design cycles because layout, thermal, and fault behavior can be verified against the datasheet electrical characteristics before tape-out.
A key design consideration is MOSFET selection: the controller drives external NMOS transistors, so gate charge, Rds(on), and SOA determine the achievable forward drop and fault robustness.
This page synthesizes distributor pricing and availability, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： NCV68261MTWAITBG-GEVB ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： NCV68261MTWAITBG-GEVB （相同外形与封装尺寸） ——差异在于 Mounting Type.
快速对比工具——选择替代料号进行并排对比：
NCV68261MTWAITBG
✅ 直接替换✓ 有现货
$0.39 / 个
查看数据手册 →NCV68261MTWAITBG-GEVB 最大额定值与电气特性
| Product Type | Evaluation Board |
| Base Controller IC | NCV68261MTWAITBG |
| Controller Function | Reverse Polarity Protection and Ideal Diode NMOS Controller with optional High Side Switch |
| MOSFET Channels | 1 or 2 external N-channel MOSFETs |
| Controller Package | 6-WDFNW (2x2 mm) |
| Switch Topology | N-Channel High Side |
| Control Interface | Enable pin |
| Reverse Current Blocking | Yes (ideal diode operation) |
| Target Replacement | Power rectifier diodes and mechanical power switches |
| Automotive Grade | NCV prefix (automotive grade per onsemi) |
| 安装类型 | Benchtop evaluation platform |
| 品牌 | onsemi |
NCV68261MTWAITBG-GEVB 6-wdfnw (2x2 mm) 引脚配置指南
NCV68261MTWAITBG-GEVB（6-wdfnw (2x2 mm) 封装）的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装，请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。
暂无详细引脚数据： NCV68261MTWAITBG-GEVB.
请参阅 数据手册 以查看完整引脚配置。
典型应用
NCV68261MTWAITBG-GEVB 适用于 6 应用s: Automotive Battery Reverse Polarity Protection, Industrial 24 V Supply Front End, Redundant Supply ORing, Low-Loss Replacement for Mechanical Power Switches, Power Board Prototyping and Reference Design Reuse, Lab Training and Product Demonstration.
Automotive Battery Reverse Polarity Protection
Automotive battery inputs are routinely exposed to reversed connections during jump-starts, service, or harness miswiring, and a conventional series diode wastes several hundred millivolts and several watts at starter-auxiliary load currents. The NCV68261 evaluated on the GEVB board drives an external N-channel MOSFET so the series path exhibits only I-load x Rds(on) drop, for example 50 mV at 10 A with a 5 mOhm MOSFET versus roughly 500 mV for a Schottky. Its ideal diode comparator rapidly turns the MOSFET off when input-to-drain polarity reverses, isolating the fault. Engineers use the evaluation board to measure blocking response and forward drop before translating the reference layout into a module.
推荐
Industrial 24 V Supply Front End
Industrial 24 V rails supply PLCs, drives, and sensors where a series rectifier diode dissipates significant power continuously. Replacing it with the NCV68261 controller and an external NMOS reduces the forward drop to millivolts, cutting thermal load inside sealed enclosures. The optional high side switch function lets the Enable pin disconnect the load for soft power sequencing or fault isolation, which a passive diode cannot do. The NCV68261MTWAITBG-GEVB evaluation board allows engineers to verify gate-drive integrity, enable timing, and reverse-current blocking against the onsemi data sheet electrical characteristics before committing to a production PCB layout.
推荐
Redundant Supply ORing
When two supplies feed a critical load, an ideal diode controller such as the NCV68261 prevents back-feeding from the healthy rail into the failed one. Traditional ORing diodes impose a large forward drop and corresponding heat, while the MOSFET-based approach on this evaluation board holds drop to I-load x Rds(on), often tens of millivolts at 5-10 A. The GEVB board lets engineers test the transition when one supply collapses, confirming that reverse current is blocked quickly enough to hold up the load bus. Measured waveforms can be compared directly with the response behavior described in the onsemi NCV68261 data sheet application section.
推荐
Low-Loss Replacement for Mechanical Power Switches
Mechanical relays and switches used as battery disconnects suffer from contact wear, arcing, and slow transition times. The NCV68261 evaluated on this board drives external N-channel MOSFETs as a solid-state, enable-controlled high side switch with no moving parts and negligible on-state loss. The Enable pin gives a microcontroller direct command of the power path, enabling soft disconnect and protection interlocks. The NCV68261MTWAITBG-GEVB evaluation board demonstrates the reference implementation so engineers can characterize switching behavior, quiescent draw, and fault response before designing the function into a module replacing a relay-based disconnect.
推荐
Power Board Prototyping and Reference Design Reuse
The 6-pin WDFNW (2x2 mm) package of the NCV68261MTWAITBG controller is impractical to prototype by hand, so the GEVB evaluation board serves as the prototyping platform: it exposes input, output, enable, and gate nodes for probes and bench supplies. Engineers validate the reference layout recommended in the onsemi data sheet, including gate-drive loop and sense connections, then copy the proven arrangement into their own PCB. This shortens design cycles for any product using the NCV68261, since layout-dependent behaviors such as reverse-blocking speed and gate ringing can be observed on the reference board first.
推荐
Lab Training and Product Demonstration
The NCV68261MTWAITBG-GEVB is well suited to demonstration and training settings where power-path protection concepts must be shown live. With an adjustable bench supply and an electronic load, an instructor can exhibit forward drop reduction versus a series diode, reverse-battery isolation, and Enable-controlled switching in real time. The onsemi evaluation board is pre-populated and documented against the published NCV68261 data sheet, so no board bring-up is required. This makes it a practical tool for universities, internal design reviews, and customer demonstrations of onsemi ideal diode controller technology.
推荐
工程参考数据： NCV68261MTWAITBG-GEVB ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | NCV68261MTWAITBG |
|---|---|---|
| Product Form | Evaluation board for NCV68261 controller | Controller IC (6-WDFNW 2x2) |
| Brand | onsemi | onsemi |
| Controller Function | Ideal diode + reverse polarity protection + optional high side switch | Identical (same die) |
| External MOSFETs Driven | 1 or 2 N-channel | 1 or 2 N-channel |
| Control Interface | Enable pin | Enable pin |
| Automotive Grade | Yes (NCV prefix) | Yes (NCV prefix) |
| Intended Use | Bench evaluation, prototyping, demonstration | Production design-in |
| Availability (as of 2026-10-19) | DigiKey/Mouser: ships today | DigiKey/Mouser: ships today; 7 distributors on Octopart |
关键差异点
- Integrated reverse polarity protection plus ideal diode plus optional high side switch in one controller （对比 NCV68261MTWAITBG used with discrete comparator circuits)
- Board-level evaluation without hand-soldering a 2x2 mm WDFNW package （对比 NCV68261MTWAITBG (bare IC))
- Automotive-grade (NCV) device baseline （对比 Generic consumer-grade ideal diode boards)
设计说明
Remember that the NCV68261 is a controller, not a standalone switch: all power handling occurs in the external N-channel MOSFETs. When translating results from the GEVB board to your own design, verify that your MOSFET selection has comparable Rds(on), gate charge, and SOA to the parts fitted on the evaluation board, otherwise measured forward drop, reverse-blocking speed, and fault robustness will not carry over. Also check the data sheet maximum ratings for the input pin before connecting bench supplies above automotive 12 V levels.
When porting the evaluation board circuit to your production PCB, keep the gate-drive loop from the controller to the MOSFET gate short and the ideal-diode sense connection (input-to-drain differential) routed as a Kelvin path to the MOSFET pins, not shared with high-current traces. Wide, short source-drain power copper minimizes parasitic inductance that can cause ringing during fast reverse-current turn-off events. Follow the reference layout on the GEVB board, which reflects the onsemi data sheet application section recommendations.
Estimated: conduction loss in the MOSFET equals I-load squared x Rds(on); for example, at 10 A with a 5 mOhm MOSFET this is approximately 0.5 W, whereas a Schottky diode at 0.5 V forward drop would dissipate 5 W. While the controller itself dissipates very little, ensure the external MOSFET package and PCB copper on your own layout provide adequate theta_JA for your load current, since the GEVB board thermal behavior will differ from a compact production board.
合规信息
The evaluated controller carries the onsemi NCV automotive-grade designation per product page; explicit RoHS/REACH declarations were not present in the provided data and are marked unknown.
