NCV68261MTWAITBG - Ideal Diode HS NMOS Controller | onsemi
料号： NCV68261MTWAITBG ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.52 | $0.52 |
| 10 | $0.48 | $4.80 |
| 100 | $0.4652 | $46.52 |
| 500 | $0.42 | $210.00 |
| 1,000 | $0.39 | $390.00 |
NCV68261MTWAITBG 概述
An ideal diode controller is a power-management device that drives an external MOSFET to emulate a diode without the conduction losses of a p-n or Schottky junction. Where a conventional rectifier diode drops roughly 0.5 V to 0.7 V and dissipates significant heat at high current, an ideal diode stage drops only Iload x Rds(on) of the MOSFET, cutting forward-voltage loss by an order of magnitude. In the vehicle power hierarchy - battery feed, reverse-polarity guard, load switch, point-of-load regulator - this part occupies the protection and switching layer, downstream of the fuse box and upstream of the load.
Key features include MOSFET gate control driven directly by the state of the Enable pin, support for one or two N-channel MOSFETs in ideal-diode or high-side-switch configurations, and automotive-grade qualification signaled by the NCV prefix. Replacing a mechanical relay or a series Schottky with this controller plus a low-Rds(on) NMOS reduces forward voltage, power dissipation, and hot-swap contact wear in the power distribution path.
Technically, the controller senses the anode-cathode orientation across the external MOSFET and adjusts the gate to block reverse current, while the enable input determines ON/OFF state. Because the external MOSFET sets the current rating, designers can scale the same controller from a few amperes to tens of amperes by selecting an appropriate NMOS - a key advantage over fixed-rating protection ICs.
Typical applications include automotive battery reverse-polarity protection, 12 V and 24 V power distribution modules, ECU main power feeds, and industrial systems replacing mechanical relays with solid-state switching. The automotive temperature-grade rating suits underhood and body-electronics environments.
Design consideration: the forward-drop saving depends entirely on the chosen MOSFET Rds(on); verify gate-drive amplitude and reverse-blocking behavior at cold crank and load-dump conditions before finalizing the BOM.
This page synthesizes distributor pricing, functional cross-references, and practical design notes not found in the manufacturer datasheet alone.
直接替换替代料： NCV68261MTWAITBG ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： NCV68261MTWAITBG （相同外形与封装尺寸） ——差异在于 Mounting Type.
快速对比工具——选择替代料号进行并排对比：
该产品暂无直接替换替代料。
请求替代料NCV68261MTWAITBG 最大额定值与电气特性
| 功能 | Reverse Polarity Protection and Ideal Diode NMOS Controller with optional High Side Switch |
| 拓扑 | External N-channel MOSFET driver (1 or 2 FETs) |
| 封装 | 6-WDFNW (2x2 mm) |
| 安装类型 | Surface Mount |
| 使能引脚 | Yes (ON/OFF state set by Enable pin) |
| Forward Voltage Loss | Lower than rectifier diode (Iload x Rds(on) of external NMOS) |
| Automotive Qualification | Automotive grade (NCV prefix, AEC-Q100 qualified family) |
| Replacement Target | Power rectifier diodes and mechanical power switches |
| Evaluation Board | NCV68261MTWAITBG-GEVB |
NCV68261MTWAITBG 6-wdfnw (2x2 mm) 引脚配置指南
NCV68261MTWAITBG（6-wdfnw (2x2 mm) 封装）的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装，请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。
暂无详细引脚数据： NCV68261MTWAITBG.
请参阅 数据手册 以查看完整引脚配置。
典型应用
NCV68261MTWAITBG 适用于 6 应用s: Automotive Reverse Polarity Protection, Solid-State Relay Replacement in ECUs, Automotive Power Distribution Modules, Diode-OR Redundant Supply Combining, Industrial 24 V Power Protection, ECU Main Power Feed and Load Switching.
Automotive Reverse Polarity Protection
The primary application for the NCV68261MTWAITBG is reverse-polarity protection on 12 V and 24 V automotive battery feeds. The controller drives an external N-channel MOSFET that blocks reverse current when the battery is connected backwards or during abnormal transients, replacing a series rectifier diode that would dissipate roughly 0.6 V x Iload continuously. With a 5 mOhm NMOS at 10 A, the forward drop is only 50 mV and dissipation only 0.5 W, a roughly 10x loss reduction. Designers should verify cold-crank and load-dump tolerance in the onsemi datasheet and size the FET for worst-case current and safe operating area.
推荐
Solid-State Relay Replacement in ECUs
The NCV68261 plus an external NMOS replaces electromechanical relays in electronic control units for loads such as pumps, heaters, and lamps. Unlike a relay, the solid-state solution has no contact erosion, no coil current draw, no contact bounce, and no audible click, and the Enable pin provides clean microcontroller-controlled switching. The forward drop equals Iload x Rds(on), so at 5 A with a 10 mOhm FET the loss is 0.25 W versus roughly 3 W for a diode plus relay coil consumption. Ensure the MOSFET SOA covers inrush currents of capacitive and lamp loads at turn-on.
推荐
Automotive Power Distribution Modules
In 12 V power distribution boxes and smart junction blocks, the NCV68261 provides per-channel protection and switching with far lower heat than diode-OR architectures. The ability to drive one or two NMOS devices lets one controller implement either a diode-OR feed (reverse-current blocking between two sources) or a switched feed under Enable control, consolidating two functions. The 2x2 mm WDFNW package conserves PCB area in dense distribution modules. Thermal design should confirm that the selected MOSFET package and copper pour keep junction temperatures below limits at continuous rated channel current.
推荐
Diode-OR Redundant Supply Combining
When combining a main battery feed with a backup source, the NCV68261 implements ideal-diode ORing: the controller senses voltage across the external NMOS and blocks reverse current from the higher rail into the lower one, automatically steering load current to the dominant source. Compared with Schottky ORing diodes, the MOSFET-based approach saves hundreds of millivolts per stage - critical in low-voltage 12 V rails where headroom is scarce. The reverse-blocking threshold and turn-off speed of the gate control determine how cleanly the transition occurs; consult the onsemi datasheet for reverse-recovery behavior specifications.
推荐
Industrial 24 V Power Protection
Industrial 24 V control panels share the same reverse-polarity and relay-replacement needs as vehicles, and the automotive-grade NCV68261 operates comfortably in that environment. Replacing bridge-rectifier front ends with an ideal diode stage reduces front-end dissipation dramatically: at 3 A, a full diode bridge wastes roughly 2.4 W while a single 10 mOhm NMOS stage wastes under 0.1 W. This enables sealed, fanless panel designs. Confirm the controller input voltage rating from the onsemi datasheet covers 24 V nominal rails plus transients per your IEC installation requirements before design release.
推荐
ECU Main Power Feed and Load Switching
At the entry point of an ECU, the NCV68261 provides the main reverse-protected power feed with optional microcontroller-controlled disconnection via the Enable pin, supporting low-power sleep modes where the entire downstream load is switched off. The solid-state switch avoids relay wear in frequently switched applications such as periodically woken body controllers. Because the controller draws minimal quiescent current in the off state (see onsemi datasheet for the exact figure), it preserves battery during long parking periods. Layout should keep the gate drive loop short and the sense lines Kelvin-routed to the MOSFET terminals for accurate reverse-current detection.
推荐
推荐产品汇总
工程参考数据： NCV68261MTWAITBG ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | LM74700AQDBVRQ1 |
|---|---|---|
| Package | 6-WDFNW (2x2 mm) | SOT-23-5 (DBV) - different package, not drop-in |
| Brand | onsemi | Texas Instruments |
| Function | Ideal diode + optional high-side switch | Ideal diode controller only |
| External MOSFET Support | 1 or 2 N-channel MOSFETs | 1 N-channel MOSFET |
| Enable / Switch Control | Yes (Enable pin sets ON/OFF) | Enable provided |
| Automotive Qualification | Automotive grade (NCV prefix) | AEC-Q100 (Q1) |
| Drop-in Footprint Compatible | N/A (reference) | No - PCB redesign required |
关键差异点
- Dual-mode operation: ideal diode AND high-side switch （对比 LM74700AQDBVRQ1)
- Lower forward drop than any diode or relay solution （对比 Schottky diode (e.g., generic 60 V 10 A Schottky))
- Compact 2x2 mm footprint （对比 LM74700AQDBVRQ1)
设计说明
The forward-voltage saving of the NCV68261 stage is set entirely by the external MOSFET: Vdrop = Iload x Rds(on) and Ploss = Iload^2 x Rds(on). Estimated: at 10 A with a 5 mOhm NMOS, drop is 50 mV and dissipation 0.5 W versus about 5-7 W for a Schottky diode at 0.5-0.7 V forward voltage. Select a MOSFET with margin on both Rds(on) at the gate-drive amplitude the NCV68261 provides and on Vds rating for load-dump transients per the onsemi datasheet.
Keep the MOSFET gate-drive loop as short as possible and route the anode/cathode (drain/source) sense connections as Kelvin traces directly to the MOSFET terminals, not shared with high-current power copper. Incorrect sense routing causes false reverse-current detection and chatter at high load. The NCV68261MTWAITBG-GEVB evaluation board from onsemi demonstrates the recommended placement of the controller, sense resistors/traces, and decoupling capacitors - copy its layout as a starting point.
Define the Enable pin state explicitly with a pull resistor; a floating Enable leaves the ON/OFF state of the external MOSFETs undefined at power-up. Also verify behavior at cold crank and load dump - automotive 12 V rails can dip below 4 V or spike above 40 V transiently - and confirm the controller and MOSFET ratings cover these windows per the onsemi datasheet before production release.
合规信息
NCV prefix denotes onsemi automotive-grade product family; specific RoHS/REACH/lead-free declarations should be confirmed from the onsemi product page and datasheet for this ordering code.
