S110FA - 1A 100V Schottky Rectifier SOD-123FA | onsemi
料号： S110FA ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.45 | $0.45 |
| 10 | $0.36 | $3.60 |
| 100 | $0.28 | $28.00 |
| 500 | $0.22 | $110.00 |
| 1,000 | $0.18 | $180.00 |
| 3,000 | $0.15 | $450.00 |
S110FA 概述
A Schottky barrier rectifier is a power semiconductor diode that uses a metal-semiconductor junction instead of the conventional PN junction found in standard rectifiers. This construction eliminates the minority-carrier storage charge, giving the device an extremely fast switching speed and a lower forward voltage drop. Within the broader taxonomy, a Schottky diode is a sub-class of rectifier diodes, which themselves belong to discrete semiconductors and ultimately to power management components used in DC power conversion.
Key features of the S110FA include low power loss, high efficiency, a guard ring for overvoltage protection, high surge current capability, and a UL flammability 94V-0 classification. The device is MSL 1 per J-STD-020, RoHS-compliant, and uses a green molding compound. The integrated guard ring structure provides transient voltage robustness that exceeds standard Schottky diodes, while the high surge current capability supports repetitive inrush conditions typical of buck converter freewheeling and reverse-battery protection.
Typical applications for the S110FA include high-efficiency DC-DC converters, freewheeling diodes in switch-mode power supplies (SMPS), reverse-polarity protection circuits, OR-ing diodes in redundant power architectures, and low-voltage rectification in industrial and automotive systems. Its 100 V reverse-voltage rating provides ample headroom for 24 V industrial bus rails and 48 V telecom rails when designing with logic-level FETs.
When designing with this part, ensure that the PCB land pattern matches the SOD-123FA recommendations in the onsemi datasheet and that the trace from the rectifier to the load can handle 1 A continuous current without excessive voltage drop. Thermal management should also be considered because the small package limits natural convection cooling; using thermal vias beneath the cathode pad helps dissipate heat into inner copper planes.
This page synthesizes onsemi datasheet values, current distributor pricing, qualified drop-in alternatives, and practical design notes not consolidated on the manufacturer datasheet alone.
直接替换替代料： S110FA ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
SS110FA
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
S115FA
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
S120FA
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
SS1H10-E3
✅ 直接替换📋 参考替代料（不在目录中）
B1100-13-F
✅ 直接替换📋 参考替代料（不在目录中）
MBRA210ET3G
✅ 直接替换📋 参考替代料（不在目录中）
S110FA 最大额定值与电气特性
| Diode Type | Schottky Barrier Rectifier |
| Reverse Voltage (VRRM) | 100 V |
| Average Rectified Forward Current (IO) | 1 A |
| Forward Voltage Drop (VF) | 800 mV at 1 A |
| 封装 | SOD-123FA |
| 安装类型 | Surface Mount |
| Configuration | Single, Independent |
| Reverse Recovery Time (trr) | Schottky (near-zero minority carrier storage) |
| MSL 等级 | MSL 1 per J-STD-020 |
| RoHS 状态 | RoHS Compliant / Green Molding Compound |
| AEC-Q101 Qualification | Industrial Device Qualified per AEC-Q101 |
| UL Flammability Rating | 94V-0 |
| Guard Ring Protection | Yes (overvoltage transient protection) |
| Manufacturer | onsemi (formerly ON Semiconductor / Fairchild) |
S110FA 引脚配置
| 引脚 1 | Anode — Anode terminal - positive side of the rectifier |
| 引脚 2 | Cathode — Cathode terminal - negative side of the rectifier, marked on package body |
典型应用
S110FA 适用于 6 应用s: Buck Converter Freewheeling Diode, Reverse-Polarity Protection Circuit, OR-ing Diode in Redundant Power, Switch-Mode Power Supply Output Rectifier, Solar Panel Blocking Diode, Automotive 12V-24V Load Protection.
Buck Converter Freewheeling Diode
The S110FA serves as the freewheeling (catch) diode across the synchronous-rectifier MOSFET or as the rectifier output stage in non-synchronous buck converters where the switching node swings from VIN to ground. Its 800 mV forward drop at 1 A keeps conduction loss below 1 W even at full load, and the Schottky construction provides near-zero reverse-recovery charge, eliminating the dead-time loss that plagues PN-junction diodes. With a 100 V reverse rating, the S110FA comfortably handles 24 V industrial and 36 V automotive rails. Engineers should size the PCB trace from the diode cathode to the load for 1 A continuous with low resistance to avoid adding series loss on top of VF.
推荐
Reverse-Polarity Protection Circuit
The S110FA in series with the supply rail provides low-loss reverse-polarity protection that outperforms P-FET ideal-diode solutions on cost and simplicity. At 800 mV forward drop the design dissipates 0.8 W at 1 A, which is acceptable for most 12 V-24 V systems; for ultra-low-loss protection a P-FET ideal-diode is preferable but costs more and occupies more board area. The 100 V reverse rating survives load-dump transients on 24 V industrial buses when paired with a TVS clamp. The SOD-123FA footprint keeps the protection circuit under 5 mm² of board area.
推荐
OR-ing Diode in Redundant Power
In N+1 redundant power architectures the S110FA provides OR-ing between two DC supplies feeding a common load, preventing back-feed when one source fails. Its 800 mV drop at 1 A is far lower than the 950 mV of a PN-junction rectifier, reducing dissipation in the 1 A range. For systems above 2 A per rail, designers should consider higher-current Schottky parts like the NRVBS260T3G instead. The AEC-Q101 qualification supports deployment in industrial automation and process-control racks where reliability is critical.
推荐
Switch-Mode Power Supply Output Rectifier
The S110FA works as the secondary-side output rectifier in isolated flyback and forward converters up to 100 V stress and 1 A load. Schottky technology is preferred here because the lack of reverse-recovery charge eliminates the switching loss and EMI that slow PN diodes generate, allowing higher switching frequencies and smaller magnetics. The AEC-Q101 industrial qualification makes the S110FA attractive for harsh-environment power supplies used in industrial IoT and process-control applications. Mount the SOD-123FA directly on the output return copper pour to maximize thermal dissipation.
推荐
Solar Panel Blocking Diode
In small photovoltaic panels and battery-backed solar charge controllers, the S110FA acts as a blocking diode to prevent reverse current flow from the battery back into the panel during low-light or night conditions. The 800 mV drop at 1 A is acceptable for sub-100 W panels where conduction loss is dominated by wiring rather than the diode. Its 100 V reverse rating covers open-circuit panel voltages up to about 36 V (typical 24 V nominal panels), making it ideal for off-grid solar installations and IoT weather stations. The MSL 1 rating simplifies field-replacement assembly.
推荐
Automotive 12V-24V Load Protection
The S110FA's AEC-Q101 industrial qualification supports deployment in 12 V and 24 V automotive subsystems for clamping, freewheeling, and reverse-polarity protection roles. Common locations include body-control modules, HVAC actuators, lighting drivers, and sensor power conditioning. The 100 V reverse rating covers 24 V double-battery jump-start events and 36 V load-dump transients when combined with a TVS clamp. Its 800 mV forward drop at 1 A keeps dissipation manageable in always-on circuits like ECU keep-alive memory supplies.
推荐
推荐产品汇总
工程参考数据： S110FA ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | SS110FA | S115FA | S120FA | SS1H10-E3 | B1100-13-F |
|---|---|---|---|---|---|---|
| Package | SOD-123FA | SOD-123FA - same | SOD-123FA - same | SOD-123FA - same | SOD-123FA - same | SOD-123 - same footprint family |
| Brand | onsemi | onsemi | onsemi | onsemi | Vishay Intertechnology | Diodes Incorporated |
| Diode Type | Schottky Barrier Rectifier | Schottky Barrier Rectifier | Schottky Barrier Rectifier | Schottky Barrier Rectifier | Schottky Barrier Rectifier | Schottky Barrier Rectifier |
| Reverse Voltage (VRRM) | 100 V | 100 V | 150 V | 200 V | 100 V | 100 V |
| Average Forward Current (IO) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
| Forward Voltage Drop (VF at 1A) | 800 mV | 800 mV | 850 mV | 850 mV | 750 mV | 700 mV |
| AEC-Q101 Qualification | Yes (Industrial) | Yes | Yes | Yes | Yes | Yes |
| MSL Level | MSL 1 | MSL 1 | MSL 1 | MSL 1 | MSL 1 | MSL 1 |
| Unit Price (qty 1, as of 2026-10-10) | $0.45 | $0.42 | $0.48 | $0.50 | $0.55 | $0.30 |
关键差异点
- AEC-Q101 industrial qualification with compact SOD-123FA footprint （对比 SS1H10-E3)
- Lower forward voltage drop than PN-junction rectifiers （对比 B1100-13-F)
- Guard-ring overvoltage protection and high surge capability （对比 S115FA)
设计说明
The SOD-123FA package is thermally limited; at 1 A continuous forward current with a 800 mV drop, the part dissipates approximately 0.8 W. Estimated: assuming θJA ≈ 150 °C/W for a SOD-123FA mounted on a 1 oz FR-4 PCB with minimal copper, junction temperature rise above ambient is roughly 0.8 × 150 = 120 °C, which exceeds the 150 °C junction limit in most ambient conditions. Add thermal vias beneath the cathode pad and connect to an inner-plane copper pour to drop θJA toward 60-80 °C/W and keep Tj below 125 °C at 70 °C ambient.
Place the S110FA close to the switching node or input terminal to minimize parasitic inductance in the high-di/dt loop. Use wide copper pours on both anode and cathode pads; the cathode pad is the primary thermal path. According to the onsemi datasheet tape-and-reel drawing BRD8011/D, the recommended land pattern includes a thermal via array beneath the cathode pad to draw heat into inner copper planes.
Do not parallel two S110FAs without ballast resistors - Schottky diodes have a negative temperature coefficient on VF, so the warmer device will hog more current. Avoid exceeding the 100 V reverse-voltage rating; even brief excursions above VRRM can cause permanent leakage increase or catastrophic failure. For high-frequency (>100 kHz) rectification, confirm that switching loss from junction capacitance is acceptable - the S110FA's capacitance is not specified in the public datasheet excerpt, so request the full datasheet from onsemi if needed.
合规信息
RoHS compliant per onsemi product documentation. Qualified to AEC-Q101 industrial device standard per onsemi datasheet (AEC-Q100 is the IC analog; AEC-Q101 applies to discrete semiconductors). MSL 1 per J-STD-020. Reach and conflict-minerals status not stated in the public datasheet excerpt and should be confirmed with onsemi for production procurement.
