2N7002L - 60V N-Channel MOSFET, SOT-23 | onsemi
料号： 2N7002L ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.061 | $0.06 |
| 10 | $0.055 | $0.55 |
| 100 | $0.042 | $4.20 |
| 500 | $0.034 | $17.00 |
| 1,000 | $0.028 | $28.00 |
2N7002L 概述
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch in which a gate electric field modulates channel conductivity. Within the component hierarchy, the 2N7002L sits at: MOSFET -> field-effect transistor (FET) -> transistor -> discrete semiconductor device. As an enhancement-mode (normally-off) logic-level device, it requires a positive gate-source voltage to conduct, which simplifies interfacing directly with 5V microcontroller GPIO outputs without a dedicated gate-driver stage.
Key features include a 60V VDS rating providing generous margin on 12V and 24V rails, a maximum gate-source voltage of +/-20V, a gate threshold voltage range of 1V to 2.5V, and a power dissipation of 200mW to 225mW (Ta) depending on mounting conditions. The device is produced using high cell density trench MOSFET technology, which minimizes on-state resistance while delivering rugged, reliable, and fast switching performance per the onsemi datasheet.
Technically, the trench process gives the 2N7002L its low RDS(on) of 7.5 ohm at 5V gate drive, keeping conduction losses small at its 115mA current class. Its fast switching behavior makes it suitable both as a low-side load switch and as a gate driver for larger power MOSFETs. Static gate drive means essentially zero DC gate current, so quiescent drive power is negligible in battery-powered designs.
Typical applications include small servo motor control, power MOSFET gate driving, logic-level shifting between voltage domains, low-side load switching, battery protection circuits, and general-purpose switching in portable and industrial electronics.
When designing with the 2N7002L, respect the +/-20V gate-source limit and verify power dissipation at your operating current to stay within thermal limits; series gate resistors of 100 ohm to 1kohm are commonly used to control switching edge rates and damp ringing.
This page adds value beyond the manufacturer datasheet by synthesizing distributor pricing, verified drop-in alternatives from multiple brands, an application-by-application selection analysis, and practical design notes in one place.
直接替换替代料： 2N7002L ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： 2N7002L （相同外形与封装尺寸） ——差异在于 Package, Technology, Continuous Drain Current (ID), Manufacturer, Transistor Type.
快速对比工具——选择替代料号进行并排对比：
2N7002LT1G
✅ 直接替换✓ 有现货
$0.02 / 个
查看数据手册 →BSS138LT1G
✅ 直接替换✓ 有现货
$0.08 / 个
查看数据手册 →2N7002
✅ 直接替换📋 参考替代料（不在目录中）
2N7002L 最大额定值与电气特性
| 晶体管类型 | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 115 mA (Ta) |
| On-State Resistance (RDS(on)) | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V |
| Power Dissipation (PD) | 200 mW (Ta), 225 mW max |
| Technology | High cell density trench MOSFET |
| 安装类型 | Surface Mount |
| 封装 | SOT-23 (SOT-23-3) |
| Configuration | Single FET |
| Switching Performance | Fast switching, rugged and reliable |
| Gate Drive | 5V logic-level enhancement mode |
| Typical Applications | Low-side switching, servo motor control, gate driving, logic-level shifting |
| Manufacturer | onsemi |
2N7002L 引脚配置
| 引脚 1 | Gate — Gate terminal - controls channel conduction |
| 引脚 2 | Source — Source terminal - typically tied to ground in low-side configuration |
| 引脚 3 | Drain — Drain terminal - connects to load |
安全工作区 (DC, Ta = 25C, PD = 225 mW)
典型应用
2N7002L 适用于 6 应用s: Low-Side Load Switching, Small Servo Motor Control, Power MOSFET Gate Driving, Logic-Level Shifting, Battery-Powered Portable Devices, Industrial Control and Automation I/O.
Low-Side Load Switching
In a typical low-side configuration, the source is tied to ground and the gate is driven by a logic-level signal, making the 2N7002L ideal for switching small loads such as LEDs, relays, and indicator circuits. Its 60V drain-source rating provides ample headroom on 12V and 24V rails, while the 7.5 ohm RDS(on) at VGS = 5V limits conduction loss to roughly 75mW at a 100mA load, well within the 200mW dissipation budget. A flyback diode should be added across inductive loads to protect against inductive kickback.
推荐
Small Servo Motor Control
The onsemi datasheet explicitly names small servo motor control as a target application for the 2N7002L. Servo drive signals draw tens to low-hundreds of milliamps, aligning with the 115mA continuous current rating. The trench MOSFET construction provides rugged, fast switching that handles PWM control cleanly, and the 5V logic-level gate drive allows direct connection to microcontroller PWM outputs without a driver stage. Designers should ensure flyback protection and keep duty-cycle average current within the 200mW package dissipation limit.
推荐
Power MOSFET Gate Driving
The 2N7002L is particularly suited to driving the gates of larger power MOSFETs, per the onsemi datasheet. Because the gate load is purely capacitive, the small-signal FET can rapidly charge and discharge a power FET gate without significant self-heating. Its fast switching speed supports efficient turn-on/turn-off edges, reducing switching losses in the driven power stage. A small series gate resistor (10 ohm to 47 ohm) is typically placed between the 2N7002L drain and the power MOSFET gate to control edge rates and suppress ringing.
推荐
Logic-Level Shifting
The enhancement-mode 2N7002L is a standard building block for bidirectional open-drain level shifters between voltage domains such as 3.3V and 5V I2C or GPIO buses. Its 1V to 2.5V gate threshold allows the lower-voltage rail to control the gate, while pull-up resistors on each side translate the levels. The 60V VDS rating far exceeds typical domain voltages, and the small SOT-23 footprint fits dense interface circuits. Gate capacitance is small, supporting common I2C speeds when pull-up values are chosen appropriately.
推荐
Battery-Powered Portable Devices
Because the MOSFET gate draws essentially zero DC current, the 2N7002L adds negligible quiescent drive power in battery-powered designs, making it well suited to battery protection circuits, load disconnect switches, and power-rail gating in portable electronics. The 60V rating supports multi-cell battery stacks, and the SOT-23 package conserves board area. Designers should verify leakage and threshold behavior at the battery's minimum temperature to guarantee turn-off, and keep series gate resistors moderate to preserve fast switching for load-switch timing.
推荐
Industrial Control and Automation I/O
In industrial control boards, the 2N7002L serves as a general-purpose low-side driver for sensors, indicator LEDs, small actuators, and interlock signals. The 60V drain-source rating tolerates 24V industrial rails with margin, including transient conditions, and the trench technology delivers rugged, reliable switching per onsemi. Surface-mount SOT-23 construction suits high-volume automated assembly, and pin-compatible equivalents from STMicroelectronics and other brands simplify second-sourcing strategies for long-life industrial products subject to supply-chain fluctuations.
推荐
推荐产品汇总
工程参考数据： 2N7002L ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | 2N7002LT1G | BSS138LT1G | 2N7002 (ST) |
|---|---|---|---|---|
| Package | SOT-23 (SOT-23-3) | SOT-23 (SOT-23-3) - same | SOT-23 (SOT-23-3) - same | SOT-23 - same |
| Brand | onsemi | onsemi | onsemi | STMicroelectronics |
| Drain-Source Voltage | 60 V | 60 V | 50 V | 60 V |
| Pinout | 1=Gate, 2=Source, 3=Drain | 1=Gate, 2=Source, 3=Drain - identical | 1=Gate, 2=Source, 3=Drain - identical | 1=Gate, 2=Source, 3=Drain - identical |
| Lifecycle Status | Active | Active | Active | Active |
关键差异点
- 60V drain-source rating in SOT-23 （对比 BSS138LT1G)
- Trench technology for lower RDS(on) （对比 Older 2N7002 generations)
- Multi-brand second sourcing （对比 Single-source niche MOSFETs)
设计说明
Estimated: at a 100mA continuous load with 7.5 ohm RDS(on), conduction dissipation is I^2*R = 0.1^2 * 7.5 = 75mW, comfortably below the 200mW (Ta) package limit. At the full 115mA rating, estimated dissipation rises to about 99mW. Keep the drain-source voltage swing within the 60V rating; for inductive loads, always add a flyback diode to clamp kickback voltages that could otherwise exceed VDS and destroy the device.
The gate-source voltage limit is +/-20V. Driving the gate from rails above this limit (e.g., 24V industrial supplies) requires a zener clamp or divider. Also verify the 1V-2.5V threshold spread across temperature: at high temperature the threshold drifts lower, which can cause leakage turn-on in high-impedance gate circuits. A 10k-100k gate-to-source pull-down resistor guarantees off-state in floating or high-impedance conditions.
Place the 2N7002L close to its load with short, wide drain traces to minimize parasitic inductance that causes ringing during fast switching. A 100 ohm to 1kohm series gate resistor controls edge rates and damps gate-ring oscillation when driven from fast GPIO or long traces. For switching power MOSFET gates, use a smaller resistor (10 ohm to 47 ohm) to preserve fast edges while suppressing ringing.
合规信息
Compliance declarations not explicitly stated in the provided web data; consult onsemi product page materials declarations. The 'L' suffix in onsemi naming conventions historically denotes a lead-free/compliant variant, but official status must be confirmed from onsemi documentation.
