STK035N4S8AG - 40V N-Channel Power MOSFET | STMicroelectronics
料号： STK035N4S8AG ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.25 | $1.25 |
| 10 | $1.12 | $11.20 |
| 100 | $0.98 | $98.00 |
| 500 | $0.85 | $425.00 |
| 1,000 | $0.72 | $720.00 |
STK035N4S8AG 概述
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current between the drain and source terminals through an electric field applied at the gate. Power MOSFETs are essential components in power electronics, serving as switches in power supplies, motor drives, and battery management systems. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. The STK035N4S8AG leverages ST's advanced strip layout technology to achieve low on-resistance and fast switching, reducing power losses and improving system efficiency.
Key features of the STK035N4S8AG include a very low on-resistance (RDS(on)) of 4.5 mOhm at 10V gate drive, which minimizes conduction losses. The device also offers a wide gate drive range from 4.5V to 10V, allowing compatibility with both 5V and 12V logic levels. Its fast switching speed, with a typical rise time of 15ns and fall time of 20ns, enables high-frequency operation up to several hundred kHz. The MOSFET is AEC-Q101 qualified, ensuring reliability for automotive applications, and is RoHS compliant.
Technically, the STK035N4S8AG uses a planar stripe geometry that optimizes the trade-off between on-resistance and gate charge. The device has a total gate charge (Qg) of 30nC, which reduces the drive power required and improves switching efficiency. The PowerFLAT 5x6 package features an exposed pad that enhances thermal dissipation, with a junction-to-case thermal resistance of 1.2 C/W. This allows the MOSFET to handle high power dissipation without exceeding the maximum junction temperature of 175C.
Typical applications include automotive body control modules, DC-DC converters, motor control, and load switching. In automotive systems, the AEC-Q101 qualification ensures reliable operation under harsh conditions, such as temperature extremes and vibration. In industrial applications, the low on-resistance and fast switching reduce energy losses, improving overall system efficiency.
When designing with the STK035N4S8AG, ensure proper gate drive voltage to fully enhance the channel and minimize on-resistance. The gate-source voltage should not exceed the absolute maximum rating of 20V. Additionally, adequate PCB copper area and thermal vias are recommended to dissipate heat effectively, especially in high-current applications.
直接替换替代料： STK035N4S8AG ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
STL140N4LLF5
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
STL120N4LLF5
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
STK035N4S8AG 最大额定值与电气特性
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 35 A |
| On-Resistance (RDS(on)) | 4.5 mOhm @ VGS=10V |
| Gate-Source Voltage (VGS) | ±20 V |
| Total Gate Charge (Qg) | 30 nC |
| 上升时间 | 15 ns |
| 下降时间 | 20 ns |
| Power Dissipation (PD) | 100 W |
| 工作温度范围 | -55C to +175C |
| 封装 | PowerFLAT 5x6 |
| 安装类型 | Surface Mount |
| AEC-Q101 Qualified | Yes |
| RoHS Compliant | Yes |
| Thermal Resistance (Junction-to-Case) | 1.2 C/W |
STK035N4S8AG 引脚配置
| 引脚 1 | G — Gate |
| 引脚 2 | S — Source |
| 引脚 3 | S — Source |
| 引脚 4 | D — Drain |
| 引脚 5 | D — Drain |
| 引脚 6 | D — Drain |
| 引脚 7 | D — Drain |
| 引脚 8 | D — Drain |
安全工作区
典型应用
STK035N4S8AG 适用于 6 应用s: Automotive Body Control Module, DC-DC Converter, Motor Control, Load Switching, Battery Management System, Power Supply Unit.
Automotive Body Control Module
The STK035N4S8AG is ideal for automotive body control modules due to its AEC-Q101 qualification and low on-resistance. It can switch loads such as lights, motors, and solenoids efficiently. In a typical body control module, the MOSFET is used as a high-side or low-side switch, controlled by a microcontroller. The low RDS(on) minimizes power dissipation, reducing heat generation in the module. The fast switching speed allows for PWM control of loads, enabling dimming or speed control. The PowerFLAT 5x6 package's exposed pad aids in thermal management, ensuring reliable operation in the engine compartment's high-temperature environment.
推荐
DC-DC Converter
In DC-DC converters, the STK035N4S8AG serves as a synchronous rectifier or main switch. Its low on-resistance (4.5 mOhm) reduces conduction losses, while the low gate charge (30nC) enables high-frequency operation, shrinking the size of magnetic components. The MOSFET's fast switching speed minimizes switching losses, improving overall converter efficiency. In a typical buck converter, the STK035N4S8AG is used in the high-side position, with a complementary low-side MOSFET. The device's thermal resistance of 1.2 C/W allows it to dissipate heat effectively, even in compact designs. The wide operating temperature range ensures reliable operation in industrial environments.
推荐
Motor Control
The STK035N4S8AG is well-suited for motor control applications, such as brushless DC (BLDC) motor drives. Its high current rating (35A) and low on-resistance enable efficient power delivery to the motor windings. The fast switching speed allows for high-frequency PWM, reducing audible noise and improving control precision. In a typical BLDC motor controller, three half-bridges are used, each with a high-side and low-side MOSFET. The STK035N4S8AG can be used in both positions, providing a compact and efficient solution. The AEC-Q101 qualification makes it suitable for automotive applications like electric power steering and cooling fans.
推荐
Load Switching
The STK035N4S8AG is an excellent choice for general load switching in industrial and consumer applications. Its low on-resistance ensures minimal voltage drop across the switch, reducing power loss. The device can handle inrush currents and short-circuit conditions due to its robust design. In a typical load switch circuit, the MOSFET is controlled by a logic signal, with a pull-down resistor to ensure it is off by default. The PowerFLAT 5x6 package's small footprint saves board space, while the exposed pad aids in heat dissipation. The wide input voltage range makes it compatible with various supply rails.
推荐
Battery Management System
In battery management systems (BMS), the STK035N4S8AG is used for cell balancing and protection. Its low on-resistance minimizes energy loss during balancing, improving system efficiency. The high current rating allows it to handle the high currents during charging and discharging. The AEC-Q101 qualification ensures reliability in automotive battery packs. In a typical BMS, the MOSFET is used in series with each cell to enable balancing, controlled by a battery management IC. The device's fast switching speed enables precise control, while the thermal performance ensures safe operation under high current conditions.
推荐
Power Supply Unit
The STK035N4S8AG is used in power supply units (PSUs) for servers, telecom, and industrial equipment. Its low on-resistance and fast switching speed improve efficiency, reducing energy consumption and heat generation. The device can operate at high frequencies, allowing for smaller transformers and inductors, reducing the overall size of the PSU. In a typical switch-mode power supply, the MOSFET is used in the primary side as a switch, with a PWM controller. The PowerFLAT 5x6 package's thermal performance ensures reliable operation even at high power levels. The wide operating temperature range makes it suitable for harsh environments.
推荐
推荐产品汇总
工程参考数据： STK035N4S8AG ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | STL140N4LLF5 | STL120N4LLF5 | IPB035N04N | NTMFS4833N |
|---|---|---|---|---|---|
| Package | PowerFLAT 5x6 | PowerFLAT 5x6 | PowerFLAT 5x6 | D2PAK | SO-8FL |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 30 V |
| Continuous Drain Current (ID) | 35 A | 40 A | 30 A | 35 A | 30 A |
| On-Resistance (RDS(on)) | 4.5 mOhm | 5.5 mOhm | 6.5 mOhm | 3.5 mOhm | 5.0 mOhm |
| Total Gate Charge (Qg) | 30 nC | 35 nC | 28 nC | 25 nC | 32 nC |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | No |
| Price (1pc) | $1.25 | $1.30 | $1.10 | $1.40 | $1.20 |
关键差异点
- Lower on-resistance than STL140N4LLF5 （对比 STL140N4LLF5)
- AEC-Q101 qualified （对比 NTMFS4833N)
- Same package as STL140N4LLF5 （对比 IPB035N04N)
设计说明
The STK035N4S8AG has a junction-to-case thermal resistance of 1.2 C/W. For high-current applications, ensure adequate PCB copper area and thermal vias to dissipate heat. At 35A and 4.5 mOhm, power dissipation is approximately 5.5W, which can be managed with proper thermal design.
Place the gate driver as close to the MOSFET as possible to minimize gate loop inductance. Use a gate resistor (e.g., 10 ohm) to control switching speed and reduce EMI. Ensure the source connection is low-inductance to avoid voltage spikes during switching.
Do not exceed the maximum gate-source voltage of ±20V. Use a zener diode or TVS for gate protection if the drive voltage can spike. Also, ensure the drain-source voltage does not exceed 40V, especially during inductive switching, to avoid avalanche breakdown.
合规信息
AEC-Q101 qualified per STMicroelectronics datasheet. RoHS compliant.