STP160N3LL - 30V 120A 2.5mOhm N-Ch MOSFET | STMicroelectronics
料号： STP160N3LL ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.42 | $142.00 |
| 500 | $1.2 | $600.00 |
| 1,000 | $0.98 | $980.00 |
STP160N3LL 概述
A power MOSFET is a voltage-controlled semiconductor switch in which the gate field modulates conduction between drain and source. As a member of the discrete semiconductors family (alongside diodes, thyristors and IGBTs), it is the workhorse of power electronics, sitting within the hierarchy: MOSFET -> transistor -> discrete semiconductor. The STP160N3LL is a low-voltage, high-current switching transistor optimized for efficiency-critical power stages.
Its headline feature is the very low 2.5 mOhm typical RDS(on), which directly minimizes conduction losses (P = I2 x R) in high-current paths. The 120 A / 136 W ratings and 175 C maximum junction temperature provide substantial thermal margin. Rth(j-case) of 1.1 C/W allows efficient heat transfer to a heatsink in TO-220 through-hole mounting.
Technically, the STripFET H6 trench gate structure achieves low on-resistance with reduced gate charge (60 nC typical) and input capacitance (4200 pF), enabling faster switching and lower switching losses than planar MOSFET designs. These parameters matter for gate-drive sizing and switching-frequency selection in synchronous rectification and DC-DC conversion.
Typical applications include synchronous rectification in high-efficiency power supplies, DC-DC converters, motor control, and battery management systems where low conduction loss at 30 V-class rails is essential.
Design tip: drive the gate with the specified 10 V gate-source voltage to fully enhance the channel and achieve the 2.5 mOhm figure; keep high-current PCB loops short and wide to limit parasitic inductance, and budget a heatsink based on actual dissipation.
直接替换替代料： STP160N3LL ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
STP110N3LL
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
VBM1301
✅ 直接替换📋 参考替代料（不在目录中）
SPP100N03S2-03
✅ 直接替换📋 参考替代料（不在目录中）
SPP80N03S2L04AKSA1
✅ 直接替换📋 参考替代料（不在目录中）
IPP018N03L
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
STP160N3LL 最大额定值与电气特性
| Technology | STripFET H6 trench gate |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 120 A at Tc=25C |
| On-Resistance (RDS(on)) typ | 2.5 mOhm |
| Total Power Dissipation (Ptot) | 136 W at Tc=25C |
| Gate Charge (Qg) typ | 60 nC |
| Input Capacitance (Ciss) | 4200 pF |
| Maximum Junction Temperature | 175 C |
| Thermal Resistance Junction-Case | 1.1 C/W |
| Polarity | N-channel |
| 封装 | TO-220 |
| 安装类型 | Through Hole |
| RDS(on) at 4.5 V VGS | 4.2 mOhm max |
| RoHS 状态 | Compliant |
| Lead Free | Yes |
STP160N3LL 引脚配置
| 引脚 1 | Gate — Gate control terminal |
| 引脚 2 | Drain — Drain terminal, connected to TO-220 metal tab |
| 引脚 3 | Source — Source terminal |
安全工作区 (VDS vs ID)
典型应用
STP160N3LL 适用于 6 应用s: Synchronous Rectification in Power Supplies, DC-DC Converters, Motor Control and Drives, Battery Management Systems, Automotive and Industrial Power Switching, Load Switches and Hot-Swap Power Paths.
Synchronous Rectification in Power Supplies
The STP160N3LL's 2.5 mOhm typical RDS(on) makes it ideal for secondary-side synchronous rectification in 12 V-output AC-DC and DC-DC power supplies, where conduction loss (I2 x R) dominates at high output currents. At 100 A, conduction loss is only about 25 W, dramatically better than Schottky diode solutions. Placed as a low-side rectifier with a 10 V gate drive, it achieves lowest on-resistance; its 30 V VDS rating provides margin against secondary leakage spikes with adequate snubbing.
推荐
DC-DC Converters
In high-current 12 V to low-voltage point-of-load converters, the STP160N3LL serves as the low-side or high-side switch. Its 60 nC gate charge and 4200 pF Ciss keep gate-drive losses manageable at 100-300 kHz switching frequencies, while trench-gate technology reduces switching losses versus planar devices. With 120 A capability and 136 W dissipation at Tc=25C, it supports multi-hundred-watt converter stages when heatsink-mounted with the 1.1 C/W Rth(j-case) exploited by forced-air cooling.
推荐
Motor Control and Drives
The STP160N3LL fits 12-24 V DC motor drive H-bridges and BLDC inverters where low RDS(on) reduces heat in confined housings. Its trench STripFET H6 structure offers fast switching, reducing transition losses during PWM commutation, and the 120 A rating handles motor stall and acceleration currents. Designers should add freewheeling protection via the body diode or external Schottky, and keep gate loops short to limit ringing; a 10 V drive ensures the 2.5 mOhm figure under full load current.
推荐
Battery Management Systems
As the main discharge/charge path switch in 12 V lead-acid or 4S lithium battery systems, the STP160N3LL's 2.5 mOhm on-resistance keeps series loss and voltage drop minimal at high pack currents, protecting runtime and accuracy of current sensing. Its 30 V rating covers transient conditions during load dump in 12 V automotive-adjacent systems. Battery protection FETs conduct continuously, so thermal design using the 1.1 C/W junction-to-case resistance and a heatsink is essential for sustained 60-100 A loads.
推荐
Automotive and Industrial Power Switching
The through-hole TO-224 strength of the STP160N3LL suits rugged industrial and vehicle 12-24 V switching applications such as solenoid drivers, heater controls, and DC contactor replacements. The 120 A capability and 175 C junction rating provide robust derating margins in high-ambient environments, and the through-hole package supports screw-mounted heatsinks for high dissipation. Note the standard STP160N3LL is not AEC-Q100 listed in the provided data; verify qualification requirements before automotive production use.
推荐
Load Switches and Hot-Swap Power Paths
For high-current ORing and hot-swap power paths on 12 V rails, the STP160N3LL acts as the series pass element where its 2.5 mOhm RDS(on) yields only 125 mV drop at 50 A, preserving downstream voltage accuracy. The 60 nC gate charge allows controlled inrush slew via gate RC networks, and its SOA supports current-limiting intervals during hot-insertion events. Pair with a controller providing fast overcurrent trip to keep single-pulse SOA within the 136 W device envelope.
推荐
推荐产品汇总
工程参考数据： STP160N3LL ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | STP110N3LL | VBM1301 | SPP100N03S2-03 | SPP80N03S2L04AKSA1 |
|---|---|---|---|---|---|
| Package | TO-220 | TO-220 - same | TO-220 - same | TO-220 - same | TO-220 - same |
| Brand | STMicroelectronics | STMicroelectronics | Vishay (per source) | Infineon | Infineon |
| Drain-Source Voltage | 30 V | 30 V | 30 V | 30 V | 30 V |
| Technology | STripFET H6 trench | STripFET trench | Trench | OptiMOS trench | OptiMOS trench |
关键差异点
- Highest current rating in the comparison set （对比 SPP100N03S2-03)
- Ultra-low on-resistance from STripFET H6 （对比 STP110N3LL)
- Trade-off: through-hole TO-220 only （对比 SPP80N03S2L04AKSA1)
设计说明
At 100 A conduction with 2.5 mOhm RDS(on), loss is 25 W. With 1.1 C/W Rth(j-case), the junction rises only 27.5 C above case, but case-to-ambient resistance of a bare TO-220 is ~50 C/W, so a heatsink is mandatory above a few watts. Size the heatsink so Tj stays below 175 C with margin; derate RDS(on) upward with temperature (roughly 1.5x at 125 C) in loss calculations.
Although the STP160N3LL is through-hole, the gate-drive loop must still be short and wide. Place the gate driver close to the gate pin, include a 10-20 Ohm gate resistor to damp ringing, and use a low-ESR gate-source pulldown (10 kOhm) to prevent floating-gate turn-on during handling. Bolt the tab to a heatsink with thermal paste and verify tab (drain) isolation requirements.
Do not drive the gate at logic levels (4.5 V) if you need the 2.5 mOhm typical figure - at 4.5 V VGS, RDS(on) max is about 4.2 mOhm, a 68 percent conduction-loss increase. Also respect the 30 V VDS limit: add snubbers or clamps in inductive switching circuits, since leakage spikes above 30 V will avalanche and can destroy the die at high current.
合规信息
RoHS compliant and lead-free per STMicroelectronics internal description. REACH and halogen-free status not stated in provided data.
