DRV8353SRTAR-Q1 - 100V 3-Phase Smart Gate Driver SPI | TI
料号： DRV8353SRTAR-Q1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $6.95 | $6.95 |
| 10 | $6.25 | $62.50 |
| 100 | $5.56 | $556.00 |
| 500 | $5 | $2,500.00 |
| 1,000 | $4.55 | $4,550.00 |
DRV8353SRTAR-Q1 概述
A three-phase gate driver is a power-management IC that controls the external MOSFETs forming the three half-bridges of an inverter stage, providing the gate charge, protection, and control interface between an MCU and the power stage. Within the power hierarchy, it sits above discrete MOSFET drivers and below full motor-controller SoCs, bridging control electronics and the power stage.
Key features include smart gate drive with VGS handshake and automatic handshake modes, IDRIVE current and slew-rate adjustability for EMI control, integrated 100% duty-cycle support and IVCP tri-level input, plus integrated protections: VDS overcurrent monitor, UVLO, OCP, OTS, and GDF fault reporting with SPI fault registers. The SPI interface enables full register-level configuration of gate-drive current, slew rate, and CSA gain.
The smart gate-drive architecture allows engineers to tune MOSFET switching speed independently for turn-on and turn-off events, balancing EMI, efficiency, and di/dt-related protection. The on-chip current shunt amplifiers (programmable gain) enable low-side current sensing for FOC and trapezoidal control without external op-amps.
Typical applications include automotive 48V BLDC pumps, fans, and traction auxiliaries, e-bike and power-sport motor inverters, industrial servo drives, drones, and power tools. The -40C to +125C operating range and AEC-Q100 qualification make it suited for harsh automotive environments.
Design tip: size the IDRIVE setting to the external MOSFET gate charge to control switching slew; overly aggressive gate drive increases radiated EMI and VDS overshoot risk on the 100V rail.
直接替换替代料： DRV8353SRTAR-Q1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： DRV8353SRTAR-Q1 （相同外形与封装尺寸） ——差异在于 Control Interface, Package.
快速对比工具——选择替代料号进行并排对比：
DRV8353SRTAR
✅ 直接替换✓ 有现货
$3.1818 / 个
查看数据手册 →DRV8353RSRTAR-Q1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
DRV8350SRTAR-Q1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
DRV8353SRTAT-Q1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
DRV8376HQNLGRQ1
⚡ 相同封装 ⚠️ 规格未核验✓ 有现货
$4.2 / 个
查看数据手册 →DRV8353SRTAR-Q1 最大额定值与电气特性
| 功能 | Three-phase smart gate driver |
| Supply Voltage Range | 9 V to 100 V |
| Control Interface | SPI (HW variant available in family) |
| Current Shunt Amplifiers | 3 (low-side, integrated) |
| 拓扑 | Triple half-bridge gate driver |
| Gate Drive Adjustment | Smart gate drive, adjustable IDRIVE and slew rate |
| Protection Features | UVLO, OCP, VDS monitor, OTS, GDF fault reporting |
| Qualification | AEC-Q100 |
| 工作温度 | -40C to +125C |
| 封装 | WQFN (RTA), 40 pins, 6x6 mm |
| 安装类型 | Surface Mount |
| Applications | BLDC / PMSM motor drives |
| Duty Cycle Support | 100% duty cycle, IVCP tri-level input |
DRV8353SRTAR-Q1 引脚配置
| 引脚 1 | VM — Motor power supply input (9 V to 100 V) |
| 引脚 2 | VCP — Charge pump output for high-side gate drive |
| 引脚 3 | CPH — Charge pump flying capacitor |
| 引脚 4 | CPL — Charge pump flying capacitor |
| 引脚 5 | VGLS — Low-side gate driver supply / LDO output |
| 引脚 6 | GND — Ground |
| 引脚 7 | GHx — High-side gate outputs (per phase) |
| 引脚 8 | SHx — Half-bridge source connections (per phase) |
| 引脚 9 | GLx — Low-side gate outputs (per phase) |
| 引脚 10 | SCLK — SPI clock input |
| 引脚 11 | SDI — SPI data input |
| 引脚 12 | SDO — SPI data output |
| 引脚 13 | nSCS — SPI chip select (active low) |
| 引脚 14 | SOx — Current shunt amplifier outputs |
| 引脚 15 | SPx/SNx — CSA inputs across sense resistors |
| 引脚 16 | nFAULT — Fault indicator output (open drain) |
| 引脚 17 | DVDD — Internal logic supply LDO output |
| 引脚 18 | GAIN/PGA pins — CSA gain/reference configuration |
| 引脚 19 | EP — Exposed thermal pad - connect to GND plane |
典型应用
DRV8353SRTAR-Q1 适用于 6 应用s: Automotive 48V BLDC Pumps and Fans, E-Bike and Power-Sport Inverters, Industrial Servo and Robotics Drives, Drone and UAV Propulsion, Power Tools and Garden Equipment, HVAC and Appliance Blowers.
Automotive 48V BLDC Pumps and Fans
The DRV8353SRTAR-Q1 fits automotive 48 V coolant pumps, oil pumps, and radiator fans because its 100 V rating provides headroom above the 48 V bus for load-dump and regenerative transients, while AEC-Q100 qualification and -40C to +125C operation satisfy automotive environmental requirements. The integrated triple current shunt amplifiers enable FOC control for quiet, efficient pump operation, and SPI-configurable slew rates let engineers tune switching speed to meet CISPR-class EMI limits in the vehicle harness.
推荐
E-Bike and Power-Sport Inverters
For 48 V e-bike, e-scooter, and ATV motor controllers, the DRV8353SRTAR-Q1 drives three half-bridges with 100 V margin and smart gate drive that balances torque efficiency against radiated EMI from the motor leads. The adjustable IDRIVE settings let designers match gate drive to low-RDS(on) 80 V to 100 V MOSFETs, while the VDS monitor catches desaturation events during stall. Integrated CSA outputs feed phase currents to the MCU for sensorless trapezoidal or FOC control without external amplifiers.
推荐
Industrial Servo and Robotics Drives
In industrial servo drives and robotic joint actuators, the DRV8353SRTAR-Q1 provides SPI-configurable gate drive with detailed fault registers (VDS, GDF, OCP, OTS) that support predictive maintenance and safe torque-off strategies. The 100 V range covers 48 V to 80 V servo buses, and the low-side current shunt amplifiers with programmable gain deliver the phase-current feedback bandwidth needed for high-dynamic FOC. Its 6x6 mm WQFN package fits compact joint electronics common in cobots.
推荐
Drone and UAV Propulsion
Multirotor and VTOL UAV electronic speed controllers benefit from the DRV8353SRTAR-Q1 high integration: three half-bridges, three CSAs, and full protection in one 6x6 mm package minimize ESC weight and area. The smart gate drive slew-rate control reduces switching loss for longer flight time at high PWM frequencies, and the VDS overcurrent monitor provides fast MOSFET protection during abrupt throttle changes. Operation up to 100 V supports high-voltage drone propulsion buses.
推荐
Power Tools and Garden Equipment
Battery-powered drills, saws, and blowers at 36 V to 80 V use the DRV8353SRTAR-Q1 for robust three-phase BLDC drive. Its protection suite (UVLO, OCP, OTS, VDS monitor) survives stall and mechanical jam events typical of power tools, while the SPI interface lets one firmware platform scale across battery voltages by reconfiguring gate-drive registers. High current CSAs support sensorless startup algorithms critical for tools starting under load.
推荐
HVAC and Appliance Blowers
High-efficiency HVAC blowers and appliance fans drive PMSM motors quietly with the DRV8353SRTAR-Q1. The adjustable slew-rate control reduces acoustic noise and conducted EMI at the inverter, an important benefit for residential appliances. Integrated CSAs enable sinusoidal FOC that cuts torque ripple and noise versus six-step drive, and the compact WQFN-40 (RTA) footprint fits dense appliance control boards operating from rectified 48 V to 80 V DC buses.
推荐
推荐产品汇总
工程参考数据： DRV8353SRTAR-Q1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | DRV8353SRTAR | DRV8353RSRTAR-Q1 | DRV8350SRTAR-Q1 |
|---|---|---|---|---|
| Package | WQFN-40 (RTA) 6x6 mm | WQFN-40 (RTA) 6x6 mm - same | WQFN-40 (RTA) 6x6 mm - same | WQFN-40 (RTA) 6x6 mm - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Supply Voltage Range | 9 V to 100 V | 9 V to 100 V | 9 V to 100 V | 9 V to 100 V |
| Control Interface | SPI | SPI | SPI | SPI |
| Current Shunt Amplifiers | 3 integrated | 3 integrated | 3 integrated | None |
| Integrated Buck Regulator | No | No | Yes | No |
| AEC-Q100 Qualification | Yes | No | Yes | Yes |
| Operating Temperature | -40C to +125C | -40C to +125C | -40C to +125C | -40C to +125C |
关键差异点
- AEC-Q100 automotive qualification （对比 DRV8353SRTAR)
- Three integrated current shunt amplifiers （对比 DRV8350SRTAR-Q1)
- SPI diagnostics with detailed fault registers （对比 DRV8376HQNLGRQ1)
设计说明
Solder the exposed thermal pad (EP) to a solid ground pour with multiple thermal vias; the EP is both the primary heat dissipation path for the WQFN-40 (RTA) 6x6 mm package and the gate-driver reference ground. Keep the SHx sense traces and low-side shunt resistor kelvin connections tight and symmetric across phases to preserve CSA accuracy.
Use the SPI IDRIVE registers to independently tune high-side and low-side source/sink gate currents. Slower turn-on reduces radiated EMI and MOSFET VDS overshoot on the 100 V rail, while faster turn-off minimizes shoot-through risk. Iterate EMI testing with sweep of slew-rate settings rather than adding snubbers first, per TI DRV835x smart gate drive application guidance.
Ensure the charge pump capacitors (CPH/CPL) and VGLS decoupling are placed close to the IC per the TI datasheet layout example. Do not exceed 102 V absolute maximum on VM including transients; a TVS on the bus is recommended for 48 V automotive systems with load dump. Read SPI fault registers (VDS, GDF, OCP, OTS) during commissioning to catch layout-induced noise faults.
合规信息
AEC-Q100 qualified per TI product page. RoHS/REACH status not stated in provided data - verify on TI.com product page.
