STP160N3LL - 30V 120A N-Channel MOSFET | STMicroelectronics
MPN: STP160N3LL ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.16 | $1.16 |
| 10 | $1.05 | $10.50 |
| 100 | $0.95 | $95.00 |
| 500 | $0.85 | $425.00 |
| 1,000 | $0.78 | $780.00 |
Drop-in alternatives for STP160N3LL — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
STP160N3LL-1
✅ Drop-In📋 Reference alternative (not in catalog)
STP160N3LL-2
✅ Drop-In📋 Reference alternative (not in catalog)
IRFP4368PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB4110PBF
✅ Drop-In📋 Reference alternative (not in catalog)
FDP120N10
✅ Drop-In📋 Reference alternative (not in catalog)
STP160N3LL Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 120 A (Tc=25°C) |
| On-Resistance (RDS(on)) | 2.5 mΩ typ. |
| Power Dissipation (PD) | 136 W (Tc=25°C) |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Charge (Qg) | 60 nC typ. |
| Input Capacitance (Ciss) | 4200 pF typ. |
| Output Capacitance (Coss) | 700 pF typ. |
| Reverse Transfer Capacitance (Crss) | 300 pF typ. |
| Maximum Junction Temperature (Tj) | 175 °C |
| Thermal Resistance (RthJC) | 1.1 °C/W |
| Package | TO-220 |
| Mounting Type | Through Hole |
| RoHS Status | Compliant |
STP160N3LL Pin Configuration
| Pin 1 | Gate — Gate terminal for controlling the MOSFET |
| Pin 2 | Drain — Drain terminal, connected to the load |
| Pin 3 | Source — Source terminal, connected to ground |
Safe Operating Area
Typical Applications
STP160N3LL is suitable for 6 applications: DC-DC Converters, Motor Control, Power Supplies, Battery Management Systems, Synchronous Rectification, Load Switches.
DC-DC Converters
The STP160N3LL is ideal for DC-DC converters, particularly in synchronous rectification stages. Its low on-resistance (2.5 mΩ) minimizes conduction losses, improving efficiency. The high current rating (120 A) supports high-power outputs. In a buck converter, the MOSFET switches at high frequency; the low gate charge (60 nC) enables fast switching, reducing switching losses. Proper gate drive and PCB layout are essential to minimize parasitic inductance.
Recommended
Motor Control
In motor control applications, the STP160N3LL provides high current capability and low on-resistance, enabling efficient drive of DC motors and brushless DC motors. The fast switching speed reduces losses in PWM control. The TO-220 package allows easy heatsinking for high-power motor drives. The device's 30V rating is suitable for 12V and 24V motor systems. Ensure adequate gate drive and protection against inductive spikes.
Recommended
Power Supplies
The STP160N3LL is well-suited for power supply applications, including switch-mode power supplies (SMPS) and power factor correction (PFC) circuits. Its low on-resistance reduces conduction losses, improving overall efficiency. The high current rating allows it to handle large load currents. In PFC boost converters, the MOSFET operates at high voltage and current; the low gate charge ensures efficient switching. Thermal management is critical due to high power dissipation.
Recommended
Battery Management Systems
In battery management systems (BMS), the STP160N3LL is used for battery protection and load switching. Its low on-resistance minimizes voltage drop and power loss, which is critical for high-current battery packs. The 30V rating is suitable for single-cell to multi-cell lithium-ion packs. The device can handle high discharge currents, making it ideal for power tools and electric vehicles. Ensure proper gate drive and protection against overcurrent.
Recommended
Synchronous Rectification
The STP160N3LL is excellent for synchronous rectification in high-efficiency power converters. Its ultra-low on-resistance (2.5 mΩ) significantly reduces conduction losses compared to Schottky diodes. The high current rating (120 A) supports high-output-current converters. The low gate charge enables fast switching, reducing switching losses. This application is common in server power supplies and telecom rectifiers. Proper gate drive timing is essential to prevent shoot-through.
Recommended
Load Switches
The STP160N3LL can be used as a high-side or low-side load switch for power distribution. Its low on-resistance ensures minimal voltage drop, and the high current rating allows switching of heavy loads. The device is suitable for hot-swap and inrush current limiting applications. The TO-220 package provides good thermal performance. Ensure proper gate drive and consider adding a soft-start circuit to limit inrush current.
Recommended
Recommended Products Summary
Engineering reference data for STP160N3LL — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STP160N3LL-1 | IRFP4368PBF | IRFB4110PBF |
|---|---|---|---|---|
| Package | TO-220 | TO-220 | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 100 V |
| Continuous Drain Current (ID) | 120 A | 120 A | 120 A | 120 A |
| On-Resistance (RDS(on)) | 2.5 mΩ | 2.5 mΩ | 2.5 mΩ | 4.5 mΩ |
| Power Dissipation (PD) | 136 W | 136 W | 136 W | 136 W |
| Gate Charge (Qg) | 60 nC | 60 nC | 60 nC | 120 nC |
| Maximum Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C |
Key Differentiators
- Ultra-low on-resistance of 2.5 mΩ (vs IRFB4110PBF)
- High current rating of 120 A (vs FDP120N10)
- STripFET H6 technology (vs IRFP4368PBF)
Design Notes
The STP160N3LL can dissipate up to 136 W at 25°C case temperature. With a thermal resistance of 1.1 °C/W, a heatsink is essential for high-power applications. Ensure the heatsink has adequate thermal capacity and airflow to keep the junction temperature below 175°C. Use thermal interface material for efficient heat transfer.
For high-current paths, use wide and short PCB traces to minimize resistance and inductance. Place the MOSFET close to the load and driver to reduce parasitic effects. Use multiple vias for thermal relief and consider a copper pour for heat spreading. Keep gate drive traces short and away from high-current traces to avoid noise coupling.
Ensure the gate-source voltage does not exceed ±20 V to prevent gate oxide damage. Use a gate resistor to limit ringing and control switching speed. For inductive loads, add a freewheeling diode or snubber to protect against voltage spikes. Verify the SOA for your operating conditions to avoid exceeding safe operating area.
Compliance Information
RoHS compliant and lead-free per STMicroelectronics product page. AEC-Q100 not applicable for discrete MOSFETs; AEC-Q101 would be relevant but not specified.
