UCC5350-Q1 - 10A Isolated Gate Driver | TI | SiC/IGBT/MOSFET
料号： UCC5350-Q1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.1 | $2.10 |
| 10 | $1.89 | $18.90 |
| 100 | $1.65 | $165.00 |
| 500 | $1.42 | $710.00 |
| 1,000 | $1.18 | $1,180.00 |
UCC5350-Q1 概述
An isolated gate driver is a semiconductor device that translates low-voltage PWM control signals into a floating, high-voltage drive signal referenced to the gate of a power transistor. Isolated gate drivers sit in the signal chain between a low-voltage controller (MCU, DSP, or digital isolator) and the gate of a high-side or low-side power switch, and they form part of the broader power management hierarchy: gate driver -> driver IC -> isolated driver -> isolated power stage. Capacitive-isolation techniques, as in the UCC5350-Q1, replace optocouplers to deliver lower part-to-part skew, lower propagation delay, higher CMTI, and improved automotive temperature performance.
Key features include 5 A minimum source/sink peak current (10 A typical), 3 kVRMS reinforced isolation, 100 V/ns minimum CMTI, propagation delay below 100 ns, and a 8 V to 18 V VDD drive supply range. The Miller-clamp variant integrates a low-impedance path that prevents parasitic turn-on during high dv/dt transients, while the split-output variant gives the gate-drive circuit independent control of turn-on and turn-off impedance for tunable EMI and switching loss.
The device integrates a TI proprietary capacitive isolation barrier based on silicon-dioxide capacitors, achieving >30 year isolation barrier life and 5 kVRMS transient withstand. Input-to-output channel matching and minimal pulse-width distortion make the UCC53553 well suited to closed-loop current-control topologies such as field-oriented control (FOC) of traction inverters, where phase-edge timing accuracy directly impacts torque ripple and acoustic noise.
Typical applications include EV traction inverters, on-board chargers (OBC), DC fast-charging station power modules, solar/string inverters, industrial motor drives, and server/telecom SMPS. AEC-Q100 Grade 1 qualification (–40C to +125C) and functional-safety-capable design files (TI documents FMEDA) make it well suited to ASIL-rated safety functions such as inverter over-current protection.
When designing with the UCC5350-Q1, place a 1 uF VDD bypass capacitor within 2 mm of the IC and use a 4.7 uF to 10 uF bulk capacitor on the VCC supply. Add a gate-source resistor of 10 kohm to prevent floating-gate leakage during MCU reset, and follow PCB layout rules that keep the input-side and output-side grounds separate (single-point star ground at the isolation barrier).
This page synthesizes distributor pricing, AEC-Q100-qualified same-package drop-in alternatives, and practical gate-drive design notes not found on stock distributor listings.
直接替换替代料： UCC5350-Q1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： UCC5350-Q1 （相同外形与封装尺寸） ——差异在于 Common-Mode Transient Immunity (CMTI), Isolation Technology, Package, Product Type, Propagation Delay.
快速对比工具——选择替代料号进行并排对比：
UCC5350MC
✅ 直接替换📋 参考替代料（不在目录中）
UCC5350S
✅ 直接替换📋 参考替代料（不在目录中）
UCC5350L-Q1
✅ 直接替换📋 参考替代料（不在目录中）
UCC21220-Q1
✅ 直接替换📋 参考替代料（不在目录中）
UCC23313BQDRQ1
✅ 直接替换📋 参考替代料（不在目录中）
SI8271AB-ISR
✅ 直接替换✓ 有现货
$2.45 / 个
查看数据手册 →UCC5350-Q1 最大额定值与电气特性
| Product Type | Single-channel isolated gate driver |
| Number of Channels | 1 |
| Peak Source Current (Typical) | 10 A |
| Peak Sink Current (Typical) | 10 A |
| Minimum Peak Source Current | 5 A |
| Minimum Peak Sink Current | 5 A |
| Isolation Voltage (RMS) | 3 kVRMS (basic); 5 kVRMS transient withstand |
| Isolation Technology | Capacitive coupling |
| Common-Mode Transient Immunity (CMTI) | 100 V/ns minimum |
| VDD Drive Supply Range | 8 V to 18 V |
| VCC Input-side Supply | 3 V to 5.5 V |
| Propagation Delay | < 100 ns |
| Output Options | Miller clamp or split (separate source/sink) outputs |
| 封装 | 8-pin SOIC (D) |
| 工作温度 | -40C to +125C |
| Automotive Qualification | AEC-Q100 Grade 1 |
| Functional Safety | FMEDA documentation available |
| RoHS 状态 | Compliant |
| 安装类型 | Surface Mount |
UCC5350-Q1 引脚配置
| 引脚 1 | VCC — Input-side supply (3 V to 5.5 V) |
| 引脚 2 | IN+ — PWM input positive |
| 引脚 3 | IN- — PWM input negative |
| 引脚 4 | GND1 — Input-side ground |
| 引脚 5 | NC — Not connected (per datasheet) |
| 引脚 6 | OUT / CLAMP — Drive output or Miller clamp (variant dependent) |
| 引脚 7 | VDD — Output-side drive supply (8 V to 18 V) |
| 引脚 8 | GND2 — Output-side ground (referenced to power-switch source) |
典型应用
UCC5350-Q1 适用于 6 应用s: EV Traction Inverter (800 V SiC), On-Board Charger (OBC) Power Stage, Industrial Motor Drive / Servo, Solar String Inverter (DC-AC Stage), DC Fast-Charging Station Module, Server / Telecom SMPS (PFC + LLC).
EV Traction Inverter (800 V SiC)
The UCC5350-Q1 is a strong match for 800 V EV traction inverters driving SiC MOSFETs because of its 10 A source/10 A sink peak drive current, 100 V/ns CMTI, and AEC-Q100 Grade 1 qualification. Placed between the MCU's PWM output and the SiC gate, it delivers the 18 V gate-drive swing that SiC MOSFETs need for full enhancement while isolating the low-voltage domain from the 800 V DC-bus. Compared to opto-isolated drivers, the capacitive isolation reduces propagation delay by up to 50 percent, which directly improves torque-ripple and acoustic-noise performance of the motor.
推荐
On-Board Charger (OBC) Power Stage
The UCC5350-Q1 fits 6.6 kW to 22 kW on-board charger power-factor-correction and DC-DC stages because it isolates 400 V to 800 V SiC or IGBT half-bridges from the LV control board. Its 8 V to 18 V VDD supply and 100 V/ns CMTI handle the fast dv/dt of a totem-pole PFC at 100 kHz, and its AEC-Q100 Grade 1 qualification satisfies the automotive reliability requirement. Designers place a 1 uF X7R bypass capacitor within 2 mm of VDD and use a 10 kohm gate-source resistor to prevent floating-gate leakage when the MCU is held in reset during CAN wake-up.
推荐
Industrial Motor Drive / Servo
For industrial servo drives and 480 V three-phase motor inverters, the UCC5350-Q1's 10 A drive strength and 3 kVRMS isolation comfortably switch 1200 V IGBT modules from sub-100 kHz PWM. The Miller-clamp variant prevents parasitic turn-on during high-side switching transients - critical for short-circuit robustness in servo drives. Compared to the older opto-isolated HCPL-3120, the UCC5350-Q1 reduces propagation delay from 500 ns to under 100 ns, allowing tighter dead-time and higher efficiency at light load.
推荐
Solar String Inverter (DC-AC Stage)
In 1500 V DC solar string inverters, the UCC5350-Q1 drives 1200 V SiC or IGBT H-bridge modules at switching frequencies up to 100 kHz. The 10 A peak drive current is sufficient for sub-150 A SiC half-bridges, and the 100 V/ns CMTI ensures no false triggering under high-side turn-on transients. The AEC-Q100 grade, while automotive-targeted, also satisfies the wide temperature swing of outdoor inverter enclosures (-40C to +125C ambient), reducing the need for separate industrial-grade qualification cycles.
推荐
DC Fast-Charging Station Module
Inside a 50 kW to 350 kW DC fast-charging stack module, the UCC5350-Q1 drives 1200 V SiC or IGBT half-bridges in the PFC and DC-DC converter with 10 A peak current and 100 V/ns CMTI. The capacitive isolation keeps the high-voltage domain safely separated from the controller, and AEC-Q100 Grade 1 qualification supports the long design-life targets required by utility-grade charging infrastructure. Layout rules per TI datasheet (single-point ground, 1 uF VDD bypass within 2 mm) must be followed to achieve the rated CMTI.
推荐
Server / Telecom SMPS (PFC + LLC)
In a 3 kW to 8 kW server SMPS or telecom rectifier, the UCC5350-Q1 drives 600 V to 650 V GaN or Si half-bridge MOSFETs in the PFC and LLC stages. Its 8 V to 18 V VDD range supports both 12 V and 15 V drive rails, and the 100 V/ns CMTI is more than sufficient for 100 kHz to 300 kHz GaN switching. Compared to a bootstrap gate driver, the UCC5350-Q1's isolation simplifies layout and removes the high-side level-shift noise risk, allowing the LLC transformer to use a more compact design.
推荐
推荐产品汇总
工程参考数据： UCC5350-Q1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | UCC5350MC | UCC5350S | UCC5350L-Q1 | UCC21220-Q1 | UCC23313BQDRQ1 | SI8271AB-IS |
|---|---|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Silicon Labs |
| Package | 8-pin SOIC (D) | 8-pin SOIC (D) | 8-pin SOIC (D) | 8-pin SOIC (D) - extended body | 8-pin SOIC (D) | 8-pin SOIC (D) | 8-pin SOIC (NB) |
| Peak Source Current (Typical) | 10 A | 10 A | 10 A | 10 A | 4 A | 3 A | 4 A |
| Peak Sink Current (Typical) | 10 A | 10 A | 10 A | 10 A | 6 A | 5 A | 4 A |
| Isolation Voltage | 3 kVRMS | 3 kVRMS | 3 kVRMS | 3 kVRMS | 3 kVRMS basic | 3 kVRMS | 2.5 kVRMS |
| CMTI (Minimum) | 100 V/ns | 100 V/ns | 100 V/ns | 100 V/ns | 100 V/ns | 100 V/ns | 200 V/ns |
| AEC-Q100 Qualification | Yes - Grade 1 | No (industrial only) | No (industrial only) | Yes - Grade 1 | Yes - Grade 1 | Yes - Grade 1 | No |
| Output Option | Miller clamp or split | Miller clamp | Split output | Miller clamp (extended pkg) | Single output | Single output | Split output |
关键差异点
- Highest peak drive current in 8-pin SOIC family （对比 UCC21220-Q1)
- Automotive qualified in compact 8-pin SOIC （对比 UCC23313BQDRQ1)
- Capacitive isolation with 30-year barrier life （对比 Optocoupler-based gate drivers (e.g., HCPL-3120))
- Optional Miller-clamp or split-output variant （对比 UCC21220-Q1 (single-output only))
设计说明
Place a 1 uF X7R ceramic bypass capacitor within 2 mm of the VDD pin (Pin 7) and a second 0.1 uF capacitor within 2 mm of VCC (Pin 1). Keep the input-side ground (GND1, Pin 4) and output-side ground (GND2, Pin 8) separate, joining them only at a single point under the IC to avoid creating a ground loop that couples high-di/dt switching noise across the isolation barrier. The SOIC-8 exposed-pad footprint of the UCC5350-Q1 family should be soldered to a copper pour that ties to GND2 on the output side.
Maintain 4 mm minimum creepage between the input-side traces and output-side traces (or any high-voltage DC-bus trace) to preserve the rated 3 kVRMS isolation. Avoid routing the gate-drive loop over the IC body to minimize loop inductance; the gate-source loop area must be minimized to suppress ringing and EMI. For Miller-clamp variants, place the clamp pin trace directly at the gate-source node with a 10 ohm series resistor to limit di/dt during dv/dt events.
Estimated: at 100 kHz switching with 100 nC total gate charge and 18 V VDD, the UCC5350-Q1 dissipates approximately (100 nC x 18 V x 100 kHz x 2) = 360 mW continuous per driver. The 8-pin SOIC package thermal resistance theta_JA is approximately 110 C/W on a 2 oz 4-layer JEDEC board, giving a 40C junction rise over ambient. No heatsink is required at this dissipation level; however, at higher frequencies (>500 kHz) or larger gate-charge loads, additional copper pour or thermal vias are required.
Add a 10 kohm resistor between the gate and the source of the power MOSFET to prevent floating-gate leakage when the MCU's PWM output is held in high-impedance during reset or fault states. For split-output variants (UCC5350S-Q1), select independent turn-on (typically 2.2 ohm) and turn-off (typically 1 ohm) gate resistors to balance switching loss and EMI. Always verify that the IN+ and IN- inputs are properly biased according to the truth table in the datasheet before applying VDD.
合规信息
AEC-Q100 Grade 1 qualified per TI datasheet. RoHS compliant per TI product page. Functional-safety-capable: FMEDA documentation is available from TI for ASIL-rated safety functions.
