UCC5350-Q1 - 10A Isolated Gate Driver | TI | SiC/IGBT/MOSFET
MPN: UCC5350-Q1 ✓ فعالUCC5350-Q1 جائزہ
An isolated gate driver is a semiconductor device that translates low-voltage PWM control signals into a floating, high-voltage drive signal referenced to the gate of a power transistor. Isolated gate drivers sit in the signal chain between a low-voltage controller (MCU, DSP, or digital isolator) and the gate of a high-side or low-side power switch, and they form part of the broader power management hierarchy: gate driver -> driver IC -> isolated driver -> isolated power stage. Capacitive-isolation techniques, as in the UCC5350-Q1, replace optocouplers to deliver lower part-to-part skew, lower propagation delay, higher CMTI, and improved automotive temperature performance.
Key features include 5 A minimum source/sink peak current (10 A typical), 3 kVRMS reinforced isolation, 100 V/ns minimum CMTI, propagation delay below 100 ns, and a 8 V to 18 V VDD drive supply range. The Miller-clamp variant integrates a low-impedance path that prevents parasitic turn-on during high dv/dt transients, while the split-output variant gives the gate-drive circuit independent control of turn-on and turn-off impedance for tunable EMI and switching loss.
The device integrates a TI proprietary capacitive isolation barrier based on silicon-dioxide capacitors, achieving >30 year isolation barrier life and 5 kVRMS transient withstand. Input-to-output channel matching and minimal pulse-width distortion make the UCC53553 well suited to closed-loop current-control topologies such as field-oriented control (FOC) of traction inverters, where phase-edge timing accuracy directly impacts torque ripple and acoustic noise.
Typical applications include EV traction inverters, on-board chargers (OBC), DC fast-charging station power modules, solar/string inverters, industrial motor drives, and server/telecom SMPS. AEC-Q100 Grade 1 qualification (–40C to +125C) and functional-safety-capable design files (TI documents FMEDA) make it well suited to ASIL-rated safety functions such as inverter over-current protection.
When designing with the UCC5350-Q1, place a 1 uF VDD bypass capacitor within 2 mm of the IC and use a 4.7 uF to 10 uF bulk capacitor on the VCC supply. Add a gate-source resistor of 10 kohm to prevent floating-gate leakage during MCU reset, and follow PCB layout rules that keep the input-side and output-side grounds separate (single-point star ground at the isolation barrier).
This page synthesizes distributor pricing, AEC-Q100-qualified same-package drop-in alternatives, and practical gate-drive design notes not found on stock distributor listings.
کے لیے ڈراپ اِن متبادل UCC5350-Q1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں UCC5350-Q1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Common-Mode Transient Immunity (CMTI), Isolation Technology, Package, Product Type, Propagation Delay.
UCC5350MC
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UCC5350S
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UCC5350L-Q1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UCC21220-Q1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UCC23313BQDRQ1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SI8271AB-ISR
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →UCC5350-Q1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Product Type | Single-channel isolated gate driver |
| Number of Channels | 1 |
| Peak Source Current (Typical) | 10 A |
| Peak Sink Current (Typical) | 10 A |
| Minimum Peak Source Current | 5 A |
| Minimum Peak Sink Current | 5 A |
| Isolation Voltage (RMS) | 3 kVRMS (basic); 5 kVRMS transient withstand |
| Isolation Technology | Capacitive coupling |
| Common-Mode Transient Immunity (CMTI) | 100 V/ns minimum |
| VDD Drive Supply Range | 8 V to 18 V |
| VCC Input-side Supply | 3 V to 5.5 V |
| Propagation Delay | < 100 ns |
| Output Options | Miller clamp or split (separate source/sink) outputs |
| پیکیج | 8-pin SOIC (D) |
| آپریٹنگ درجہ حرارت | -40C to +125C |
| Automotive Qualification | AEC-Q100 Grade 1 |
| Functional Safety | FMEDA documentation available |
| RoHS اسٹیٹس | Compliant |
| ماؤنٹنگ ٹائپ | Surface Mount |
UCC5350-Q1 پن کنفیگریشن
| پن 1 | VCC — Input-side supply (3 V to 5.5 V) |
| پن 2 | IN+ — PWM input positive |
| پن 3 | IN- — PWM input negative |
| پن 4 | GND1 — Input-side ground |
| پن 5 | NC — Not connected (per datasheet) |
| پن 6 | OUT / CLAMP — Drive output or Miller clamp (variant dependent) |
| پن 7 | VDD — Output-side drive supply (8 V to 18 V) |
| پن 8 | GND2 — Output-side ground (referenced to power-switch source) |
عام استعمالات
UCC5350-Q1 کے لیے موزوں ہے 6 ایپلیکیشنs: EV Traction Inverter (800 V SiC), On-Board Charger (OBC) Power Stage, Industrial Motor Drive / Servo, Solar String Inverter (DC-AC Stage), DC Fast-Charging Station Module, Server / Telecom SMPS (PFC + LLC).
EV Traction Inverter (800 V SiC)
The UCC5350-Q1 is a strong match for 800 V EV traction inverters driving SiC MOSFETs because of its 10 A source/10 A sink peak drive current, 100 V/ns CMTI, and AEC-Q100 Grade 1 qualification. Placed between the MCU's PWM output and the SiC gate, it delivers the 18 V gate-drive swing that SiC MOSFETs need for full enhancement while isolating the low-voltage domain from the 800 V DC-bus. Compared to opto-isolated drivers, the capacitive isolation reduces propagation delay by up to 50 percent, which directly improves torque-ripple and acoustic-noise performance of the motor.
تجویز کردہ
On-Board Charger (OBC) Power Stage
The UCC5350-Q1 fits 6.6 kW to 22 kW on-board charger power-factor-correction and DC-DC stages because it isolates 400 V to 800 V SiC or IGBT half-bridges from the LV control board. Its 8 V to 18 V VDD supply and 100 V/ns CMTI handle the fast dv/dt of a totem-pole PFC at 100 kHz, and its AEC-Q100 Grade 1 qualification satisfies the automotive reliability requirement. Designers place a 1 uF X7R bypass capacitor within 2 mm of VDD and use a 10 kohm gate-source resistor to prevent floating-gate leakage when the MCU is held in reset during CAN wake-up.
تجویز کردہ
Industrial Motor Drive / Servo
For industrial servo drives and 480 V three-phase motor inverters, the UCC5350-Q1's 10 A drive strength and 3 kVRMS isolation comfortably switch 1200 V IGBT modules from sub-100 kHz PWM. The Miller-clamp variant prevents parasitic turn-on during high-side switching transients - critical for short-circuit robustness in servo drives. Compared to the older opto-isolated HCPL-3120, the UCC5350-Q1 reduces propagation delay from 500 ns to under 100 ns, allowing tighter dead-time and higher efficiency at light load.
تجویز کردہ
Solar String Inverter (DC-AC Stage)
In 1500 V DC solar string inverters, the UCC5350-Q1 drives 1200 V SiC or IGBT H-bridge modules at switching frequencies up to 100 kHz. The 10 A peak drive current is sufficient for sub-150 A SiC half-bridges, and the 100 V/ns CMTI ensures no false triggering under high-side turn-on transients. The AEC-Q100 grade, while automotive-targeted, also satisfies the wide temperature swing of outdoor inverter enclosures (-40C to +125C ambient), reducing the need for separate industrial-grade qualification cycles.
تجویز کردہ
DC Fast-Charging Station Module
Inside a 50 kW to 350 kW DC fast-charging stack module, the UCC5350-Q1 drives 1200 V SiC or IGBT half-bridges in the PFC and DC-DC converter with 10 A peak current and 100 V/ns CMTI. The capacitive isolation keeps the high-voltage domain safely separated from the controller, and AEC-Q100 Grade 1 qualification supports the long design-life targets required by utility-grade charging infrastructure. Layout rules per TI datasheet (single-point ground, 1 uF VDD bypass within 2 mm) must be followed to achieve the rated CMTI.
تجویز کردہ
Server / Telecom SMPS (PFC + LLC)
In a 3 kW to 8 kW server SMPS or telecom rectifier, the UCC5350-Q1 drives 600 V to 650 V GaN or Si half-bridge MOSFETs in the PFC and LLC stages. Its 8 V to 18 V VDD range supports both 12 V and 15 V drive rails, and the 100 V/ns CMTI is more than sufficient for 100 kHz to 300 kHz GaN switching. Compared to a bootstrap gate driver, the UCC5350-Q1's isolation simplifies layout and removes the high-side level-shift noise risk, allowing the LLC transformer to use a more compact design.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا UCC5350-Q1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | UCC5350MC | UCC5350S | UCC5350L-Q1 | UCC21220-Q1 | UCC23313BQDRQ1 | SI8271AB-IS |
|---|---|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Silicon Labs |
| Package | 8-pin SOIC (D) | 8-pin SOIC (D) | 8-pin SOIC (D) | 8-pin SOIC (D) - extended body | 8-pin SOIC (D) | 8-pin SOIC (D) | 8-pin SOIC (NB) |
| Peak Source Current (Typical) | 10 A | 10 A | 10 A | 10 A | 4 A | 3 A | 4 A |
| Peak Sink Current (Typical) | 10 A | 10 A | 10 A | 10 A | 6 A | 5 A | 4 A |
| Isolation Voltage | 3 kVRMS | 3 kVRMS | 3 kVRMS | 3 kVRMS | 3 kVRMS basic | 3 kVRMS | 2.5 kVRMS |
| CMTI (Minimum) | 100 V/ns | 100 V/ns | 100 V/ns | 100 V/ns | 100 V/ns | 100 V/ns | 200 V/ns |
| AEC-Q100 Qualification | Yes - Grade 1 | No (industrial only) | No (industrial only) | Yes - Grade 1 | Yes - Grade 1 | Yes - Grade 1 | No |
| Output Option | Miller clamp or split | Miller clamp | Split output | Miller clamp (extended pkg) | Single output | Single output | Split output |
اہم امتیازی خصوصیات
- Highest peak drive current in 8-pin SOIC family (بمقابلہUCC21220-Q1)
- Automotive qualified in compact 8-pin SOIC (بمقابلہUCC23313BQDRQ1)
- Capacitive isolation with 30-year barrier life (بمقابلہOptocoupler-based gate drivers (e.g., HCPL-3120))
- Optional Miller-clamp or split-output variant (بمقابلہUCC21220-Q1 (single-output only))
ڈیزائن نوٹس
Place a 1 uF X7R ceramic bypass capacitor within 2 mm of the VDD pin (Pin 7) and a second 0.1 uF capacitor within 2 mm of VCC (Pin 1). Keep the input-side ground (GND1, Pin 4) and output-side ground (GND2, Pin 8) separate, joining them only at a single point under the IC to avoid creating a ground loop that couples high-di/dt switching noise across the isolation barrier. The SOIC-8 exposed-pad footprint of the UCC5350-Q1 family should be soldered to a copper pour that ties to GND2 on the output side.
Maintain 4 mm minimum creepage between the input-side traces and output-side traces (or any high-voltage DC-bus trace) to preserve the rated 3 kVRMS isolation. Avoid routing the gate-drive loop over the IC body to minimize loop inductance; the gate-source loop area must be minimized to suppress ringing and EMI. For Miller-clamp variants, place the clamp pin trace directly at the gate-source node with a 10 ohm series resistor to limit di/dt during dv/dt events.
Estimated: at 100 kHz switching with 100 nC total gate charge and 18 V VDD, the UCC5350-Q1 dissipates approximately (100 nC x 18 V x 100 kHz x 2) = 360 mW continuous per driver. The 8-pin SOIC package thermal resistance theta_JA is approximately 110 C/W on a 2 oz 4-layer JEDEC board, giving a 40C junction rise over ambient. No heatsink is required at this dissipation level; however, at higher frequencies (>500 kHz) or larger gate-charge loads, additional copper pour or thermal vias are required.
Add a 10 kohm resistor between the gate and the source of the power MOSFET to prevent floating-gate leakage when the MCU's PWM output is held in high-impedance during reset or fault states. For split-output variants (UCC5350S-Q1), select independent turn-on (typically 2.2 ohm) and turn-off (typically 1 ohm) gate resistors to balance switching loss and EMI. Always verify that the IN+ and IN- inputs are properly biased according to the truth table in the datasheet before applying VDD.
تعمیل کی معلومات
AEC-Q100 Grade 1 qualified per TI datasheet. RoHS compliant per TI product page. Functional-safety-capable: FMEDA documentation is available from TI for ASIL-rated safety functions.
