2EDN8533RXTMA1 vs 1EDN7136UXTSA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ 2EDN8533RXTMA1 بواسطة Infineon و 1EDN7136UXTSA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | 2EDN8533RXTMA1 | 1EDN7136UXTSA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | Power MOSFET Drivers | Power MOSFET Drivers |
| حالة دورة الحياة | نشط | نشط |
| Product Type | Dual-channel low-side gate driver IC | — |
| Driver Configuration | Low-side, dual independent channels | — |
| Peak Source/Sink Current | 5 A per channel | — |
| Number of Channels | 2 | — |
| Input Compatibility | LV-TTL | — |
| Input Voltage Tolerance (absolute max) | -12 V to +22 V | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC operating range] | — |
| Output Resistance | Low (per datasheet; see SG figure) | — |
| Propagation Delay | Matched between channels (excellent timing accuracy) | — |
| Under-Voltage Lockout (UVLO) | Yes (VCC UVLO) | Yes (driver supply and logic input) |
| العلبة | PG-TSSOP-8 (exposed pad) | TSNP-6 with exposed pad (PG-VSON-1) |
| نوع التركيب | Surface Mount | Surface Mount |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: operating temperature] | -40 C to +150 C |
| مستوى MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| حالة RoHS | Compliant (per Infineon product page) | Compliant |
| الوظيفة | — | High-side / Low-side gate driver IC |
| Driven Device Type | — | GaN HEMT, N-channel MOSFET |
| عدد المخارج | — | 2 (high-side and low-side) |
| Peak Source Current | — | 1 A |
| Peak Sink Current | — | 2 A |
| Driver Supply Voltage (Max) | — | 200 V |
| Logic Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Input Type | — | Truly Differential Input (TDI) |
| Active Miller Clamp | — | Yes (integrated) |
| Propagation Delay (Typ) | — | [DATA_NEEDED: propagation delay value] |
| Lead-Free | — | Yes |
| خالٍ من الهالوجين | — | Yes (per Infineon product family convention) |