BAT42 vs BAT43-R0 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ BAT42 بواسطة STMicroelectronics و BAT43-R0 بواسطة Taiwan Semiconductor. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Taiwan Semiconductor
BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor
BAT43-R0 ✓ نشطمقارنة المواصفات
| المعامل | BAT42 | BAT43-R0 |
|---|---|---|
| العلامة التجارية | STMicroelectronics | Taiwan Semiconductor |
| الفئة | Diodes | Diodes |
| حالة دورة الحياة | نشط | نشط |
| Diode Type | Small Signal Schottky Barrier | Small Signal Schottky Barrier |
| Repetitive Reverse Voltage (VRRM) | 30 V | — |
| Average Forward Current (IF(AV)) | 200 mA | 200 mA |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 4 A | 4 A |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Junction Operating Temperature | up to 125 C | -65C to +125C |
| Switching Speed | Fast (Schottky, no reverse recovery) | — |
| العلبة | DO-35 axial through-hole | DO-35 axial glass (through hole) |
| Configuration | Single diode | Single diode |
| Technology | Metal-to-silicon Schottky junction with guard ring ESD protection | — |
| نوع التركيب | Through Hole | Through Hole |
| Application Class | General purpose fast switching | — |
| حالة RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Manufacturer | STMicroelectronics | — |
| Repetitive Peak Reverse Voltage (VRRM) | — | 30 V |
| Maximum Forward Voltage (VF) | — | 1 V |
| Power Dissipation | — | 200 mW |
| Reverse Recovery | — | Fast switching (Schottky, majority carrier) |
| ESD Protection | — | Fast guard ring against excessive voltage (ESD) |
| Forward Voltage Turn-On | — | Very low turn-on voltage |
| Capacitance (Cj) | — | [DATA_NEEDED: junction capacitance] |
| Leakage Current (IR) | — | [DATA_NEEDED: reverse leakage current] |
| Packaging Type | — | [DATA_NEEDED: tape/reel or bulk option] |