IPTG025N15NM6ATMA1 vs ISC016N08NM8ATMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IPTG025N15NM6ATMA1 بواسطة Infineon و ISC016N08NM8ATMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IPTG025N15NM6ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 6 150 V (N-channel trench) | Trench-gate OptiMOS 8 (silicon) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25C | 26 A | — |
| Continuous Drain Current (ID) at TC=25C | 264 A (pulsed) | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 395 W | — |
| On-State Resistance RDS(on) typ | 2.5 mOhm at VGS=10 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg value] | [DATA_NEEDED: total gate charge] |
| العلبة | PG-HSOG-8-1 (TOLG) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| نوع التركيب | Surface Mount | Surface Mount |
| نطاق درجة حرارة التشغيل | -55 C to +175 C (typical for OptiMOS 6) | -55 C to +150 C (junction) |
| حالة RoHS | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | — |
| Solder Joint Reliability | Excellent - 30% smaller footprint than D2PAK | — |
| Product Series | — | OptiMOS 8 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |
| مستوى MSL | — | 1 (per JEDEC J-STD-020E classification for SuperSO8) |