IRFS52N15DTRLP vs IRFB52N15DPBF مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IRFS52N15DTRLP بواسطة Infineon و IRFB52N15DPBF بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IRFS52N15DTRLP | IRFB52N15DPBF |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (Planar) | HEXFET (vertical DMOS, hexagonal cell) |
| Drain-to-Source Voltage (Vdss) | 150 V | — |
| Continuous Drain Current (Id) @ TC = 25 C | 51 A (Tc) | — |
| Continuous Drain Current (Id) @ TC = 100 C | 36 A (Tc, estimated) | — |
| Continuous Drain Current (Id) @ TA = 25 C | 60 A (Ta, datasheet) | — |
| On-Resistance Rds(on) max @ VGS = 10 V | 32 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical 3 V) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge in nC] | 60 nC (typical) |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd in nC] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss in pF] | — |
| Power Dissipation (Pd) @ TC = 25 C | 230 W (Tc) | — |
| Power Dissipation (Pd) @ TA = 25 C | 3.8 W (Ta) | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC in C/W] | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA in C/W] | — |
| نطاق درجة حرارة التشغيل | -55 C to +175 C (junction) | — |
| العلبة | D2PAK (TO-263) surface mount | — |
| نوع التركيب | Surface Mount | Through Hole |
| عدد الأطراف | 3 (Gate, Drain, Source) + tab | — |
| حالة RoHS | Compliant | Compliant |
| Lead-Free Finish | Yes (matte tin) | Yes (Pb-free PBF suffix) |
| مستوى MSL | 1 (per JEDEC J-STD-020, typical for D2PAK) | — |
| Drain-Source Voltage (V(BR)DSS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25C | — | 51 A |
| Pulsed Drain Current (IDM) | — | 204 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 32 mOhm at VGS=10V |
| Power Dissipation (PD) at TC=25C | — | 230 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| درجة حرارة الوصلة التشغيلية | — | -55 C to +175 C |
| Package Type | — | TO-220AB (through-hole) |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Qualification Standard | — | Industrial market (per IR/Infineon) |