IRFS52N15DTRLP vs IRFB52N15DPBF तुलना
विस्तृत दोनों ओर की तुलना IRFS52N15DTRLP द्वारा Infineon और IRFB52N15DPBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRFS52N15DTRLP | IRFB52N15DPBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (Planar) | HEXFET (vertical DMOS, hexagonal cell) |
| Drain-to-Source Voltage (Vdss) | 150 V | — |
| Continuous Drain Current (Id) @ TC = 25 C | 51 A (Tc) | — |
| Continuous Drain Current (Id) @ TC = 100 C | 36 A (Tc, estimated) | — |
| Continuous Drain Current (Id) @ TA = 25 C | 60 A (Ta, datasheet) | — |
| On-Resistance Rds(on) max @ VGS = 10 V | 32 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical 3 V) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge in nC] | 60 nC (typical) |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd in nC] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss in pF] | — |
| Power Dissipation (Pd) @ TC = 25 C | 230 W (Tc) | — |
| Power Dissipation (Pd) @ TA = 25 C | 3.8 W (Ta) | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC in C/W] | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA in C/W] | — |
| ऑपरेटिंग तापमान रेंज | -55 C to +175 C (junction) | — |
| पैकेज | D2PAK (TO-263) surface mount | — |
| माउंटिंग प्रकार | Surface Mount | Through Hole |
| पिन काउंट | 3 (Gate, Drain, Source) + tab | — |
| RoHS स्थिति | Compliant | Compliant |
| Lead-Free Finish | Yes (matte tin) | Yes (Pb-free PBF suffix) |
| MSL स्तर | 1 (per JEDEC J-STD-020, typical for D2PAK) | — |
| Drain-Source Voltage (V(BR)DSS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25C | — | 51 A |
| Pulsed Drain Current (IDM) | — | 204 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 32 mOhm at VGS=10V |
| Power Dissipation (PD) at TC=25C | — | 230 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| ऑपरेटिंग जंक्शन तापमान | — | -55 C to +175 C |
| Package Type | — | TO-220AB (through-hole) |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Qualification Standard | — | Industrial market (per IR/Infineon) |