IRFS52N15DTRLP vs IRFB52N15DPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFS52N15DTRLP sa pamamagitan ng Infineon at IRFB52N15DPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFS52N15DTRLP | IRFB52N15DPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (Planar) | HEXFET (vertical DMOS, hexagonal cell) |
| Drain-to-Source Voltage (Vdss) | 150 V | — |
| Continuous Drain Current (Id) @ TC = 25 C | 51 A (Tc) | — |
| Continuous Drain Current (Id) @ TC = 100 C | 36 A (Tc, estimated) | — |
| Continuous Drain Current (Id) @ TA = 25 C | 60 A (Ta, datasheet) | — |
| On-Resistance Rds(on) max @ VGS = 10 V | 32 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical 3 V) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge in nC] | 60 nC (typical) |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd in nC] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss in pF] | — |
| Power Dissipation (Pd) @ TC = 25 C | 230 W (Tc) | — |
| Power Dissipation (Pd) @ TA = 25 C | 3.8 W (Ta) | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC in C/W] | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA in C/W] | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction) | — |
| Packhaging | D2PAK (TO-263) surface mount | — |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Bilang ng Pin | 3 (Gate, Drain, Source) + tab | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free Finish | Yes (matte tin) | Yes (Pb-free PBF suffix) |
| Level ng MSL | 1 (per JEDEC J-STD-020, typical for D2PAK) | — |
| Drain-Source Voltage (V(BR)DSS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25C | — | 51 A |
| Pulsed Drain Current (IDM) | — | 204 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 32 mOhm at VGS=10V |
| Power Dissipation (PD) at TC=25C | — | 230 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Package Type | — | TO-220AB (through-hole) |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Qualification Standard | — | Industrial market (per IR/Infineon) |