K9HQGY8S5M vs K9CHGY8S5C-CCK0 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ K9HQGY8S5M بواسطة Samsung Electronics و K9CHGY8S5C-CCK0 بواسطة Samsung Electronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ نشطمقارنة المواصفات
| المعامل | K9HQGY8S5M | K9CHGY8S5C-CCK0 |
|---|---|---|
| العلامة التجارية | Samsung Electronics | Samsung Electronics |
| الفئة | Memory ICs | Memory ICs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory (stacked, client NAND) | NAND Flash Memory |
| Package Type | 316-ball Fine Pitch BGA (FBGA-316) | — |
| Die Configuration | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) | — |
| NAND Technology | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) | — |
| Memory Class | Non-volatile NAND flash | — |
| الواجهة | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] | — |
| Density | [DATA_NEEDED: total bit density] | [DATA_NEEDED: total density in Gb] |
| جهد التغذية | [DATA_NEEDED: VCC range] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance rating] | [DATA_NEEDED: P/E endurance] |
| نوع التركيب | Surface Mount (BGA) | Surface Mount (BGA reflow) |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| حالة RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| مستوى MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Original Application | Samsung SSD 850 Pro solid-state drive | — |
| العلبة | — | BGA-316 |
| التنظيم | — | x8 (8-bit data access), quad CE configuration |
| Chip Enable Count | — | 16 (CE_n) |
| Pin Reduction | — | Not used |
| Supply Rail VCC | — | 1.83 V |
| Supply Rail (secondary) | — | 1.84 V |
| Supply Rail VCCQ-class | — | 2.96 V |
| Program/Erase Supply Rail | — | 12 V domain |
| Memory Technology | — | [DATA_NEEDED: cell type / V-NAND generation] |
| نوع الواجهة | — | [DATA_NEEDED: toggle DDR / ONFI, max data rate] |