MPX2010GP vs MPX2102GP مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MPX2010GP بواسطة STMicroelectronics و MPX2102GP بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
STMicroelectronics
MPX2010GP - 10 kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPX2010GP ✓ نشطمقارنة المواصفات
| المعامل | MPX2010GP | MPX2102GP |
|---|---|---|
| العلامة التجارية | STMicroelectronics | NXP Semiconductors |
| الفئة | Pressure Sensors | Pressure Sensors |
| حالة دورة الحياة | نشط | نشط |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Sensitivity (Full-Scale Span) | 25 mV typical at 10 V excitation | — |
| نطاق جهد الخرج | 0 mV to 25 mV (10 V supply) | 0 mV to 40 mV |
| Offset (Zero Pressure) | 0 mV nominal | — |
| Supply Voltage (Excitation) | 10 V DC typical (max per datasheet) | — |
| تيار التغذية | 6 mA DC typical | — |
| Response Time | 1 ms typical | — |
| Linearity | [DATA_NEEDED: linearity %FS] | 1.0 % maximum |
| Temperature Compensation | On-chip, calibrated | — |
| نطاق درجة حرارة التشغيل | -40 C to +125 C | — |
| Storage Temperature Range | -40 C to +125 C | — |
| Port Style | Male, 0.19 inch (4.93 mm) tube, vented gauge | — |
| العلبة / الحالة | 4-SIP Module (Case 344B-01) | — |
| نوع التركيب | Through-Hole (SIP) | Through-Hole SIP |
| Media Compatibility | Dry gases (silicone gel isolation) | — |
| حالة RoHS | Compliant | Compliant |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Full-Scale Output (VoutFS) | — | 40 mV at 10 V excitation |
| Excitation Voltage | — | 10 V typical (DC) |
| Sensitivity | — | 0.4 mV/kPa nominal |
| Pressure Port | — | Male 0.19 in (4.93 mm) tube |
| درجة حرارة التشغيل | — | 0 C to +85 C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Temperature Compensation Range | — | 0 C to +85 C (on-chip) |
| العلبة | — | 4-SIP Module (Unibody GP) |
| Sensor Technology | — | Silicon piezoresistive, monolithic diaphragm |
| Offset (null) | — | 0 mV to 1 mV typical |