MPXM2202GST1 vs MPXM2102GS مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MPXM2202GST1 بواسطة STMicroelectronics و MPXM2102GS بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
STMicroelectronics
MPXM2202GST1 - 200kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPXM2202GST1 ✓ نشطمقارنة المواصفات
| المعامل | MPXM2202GST1 | MPXM2102GS |
|---|---|---|
| العلامة التجارية | STMicroelectronics | NXP Semiconductors |
| الفئة | Pressure Sensors | Pressure Sensors |
| حالة دورة الحياة | نشط | Obsolete |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 200 kPa (0 psi to 29.01 psi) | 0 kPa to 100 kPa (0 to 14.5 PSI) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | — |
| نوع الخرج | Analog Wheatstone bridge (millivolt differential) | — |
| Full-Scale Span | 0 mV to 40 mV at 10 V excitation | — |
| Linearity | ±0.25% (P2 grade) | [DATA_NEEDED: linearity %FS] |
| جهد التغذية | 10 V typical (sensor excitation) | 10 V typical (max 16 V) |
| درجة حرارة التشغيل | 0 °C to +85 °C (compensated range) | -40 C to +125 C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Temperature Compensation | On-chip, 0 °C to +85 °C | On-chip (laser-trimmed) |
| Port Type | Male barbed tube, top-side, 0.12" (2.97 mm) | — |
| العلبة | 5-SMD M-PAK module, top port | — |
| نوع التركيب | Surface Mount (SMD Gull-Wing leads) | Surface Mount |
| حالة RoHS | Compliant | unknown |
| Technology | Piezoresistive silicon MEMS, single-element | Piezoresistive silicon strain gauge |
| Bridge Resistance | [DATA_NEEDED: input/output bridge resistance] | — |
| جهد الخرج | — | 0 mV to 40 mV at 10 V excitation |
| Sensitivity | — | 0.4 mV/kPa nominal |
| Pressure Port | — | Top-mounted tube (0.12" / 2.97 mm) |
| Port Configuration | — | Single port, vented gauge |
| Package Type | — | 5-SMD Module, M-PAC (MPAK-4) |
| Diaphragm | — | Single monolithic silicon |
| Series | — | MPX2102 |