MPXV10GC7U vs MPVZ5150GC7U مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MPXV10GC7U بواسطة NXP Semiconductors و MPVZ5150GC7U بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | MPXV10GC7U | MPVZ5150GC7U |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | Pressure Sensors | Pressure Sensors |
| حالة دورة الحياة | نشط | نشط |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) | 0 kPa to 150 kPa (0 PSI to 21.76 PSI) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | — |
| نوع الخرج | Analog Wheatstone Bridge (uncompensated mV) | Analog Voltage (ratiometric) |
| Full-Scale Output | 0 mV to 35 mV at 3 V supply | — |
| Sensitivity | 3.5 mV/kPa nominal | — |
| جهد التغذية | 3 V to 6 V (3 V typical excitation) | 4.75 V to 5.25 V |
| تيار التغذية | [DATA_NEEDED: supply current] | [DATA_NEEDED: supply current] |
| Input Impedance | [DATA_NEEDED: bridge input impedance] | — |
| Output Impedance | [DATA_NEEDED: bridge output impedance] | — |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | -40 °C to +125 °C |
| Port Style | Top port, 0.13" (3.18 mm) tube inlet | Top Port, Male 0.13" (3.17 mm) Tube |
| العلبة | 8-DIP (0.550", 13.97 mm) through-hole | 8-DIP (Case 867F, 10.67 x 10.67 x 12.96 mm) |
| نوع التركيب | Through-Hole | Through Hole |
| Media Compatibility | Dry non-corrosive gases (reference port vented to ambient) | Dry air and non-corrosive gases (silicone gel isolation) |
| Compensation | None on chip - external calibration required | — |
| حالة RoHS | [DATA_NEEDED: RoHS compliance] | Compliant |
| Maximum Overload Pressure | — | [DATA_NEEDED: maximum overload pressure] |
| نطاق جهد الخرج | — | 0.2 V to 4.7 V |
| Pressure Accuracy | — | ±1.5 % (0 °C to 85 °C) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Response Time | — | 1.0 ms (typical) |
| Technology | — | Piezoresistive (MEMS) with ASIC signal conditioning |