MRFE6S9135HR3 vs MRFE6S9200HR3 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MRFE6S9135HR3 بواسطة NXP Semiconductors و MRFE6S9200HR3 بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
NXP Semiconductors
MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L
MRFE6S9135HR3 ✓ نشط
مقارنة المواصفات
| المعامل | MRFE6S9135HR3 | MRFE6S9200HR3 |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| نوع الترانزستور | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | N-Channel LDMOS (RF Power) |
| Technology | RF Power LDMOS | Enhancement-mode LDMOS (HV6E) |
| Drain-Source Voltage (Rated) | 66 V | — |
| Typical Operating Voltage | 28 V | — |
| Output Power (Pout) | 39 W (at 940 MHz, two-tone test) | — |
| Power Gain (Gps) | 21 dB (typical at 940 MHz) | — |
| Drain Efficiency | 63.3 % (typical at test conditions) | — |
| Test Current | 1 A | — |
| Operating Frequency Range | Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) | — |
| Test Frequency | 940 MHz | — |
| Package Type | NI-880H-2L (ceramic flange) | — |
| نوع التركيب | Screw-mount / bolt-down flange | Chassis / flange mount, SMD variant 5.08 mm height |
| ESD Protection (HBM) | Class II (per JESD22-A114) | — |
| ESD Protection (MM) | Class A (per EIA/JESD22-A115) | — |
| ESD Protection (CDM) | Class IV (per JESD22-C101) | — |
| حالة RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Lead Status | Lead-containing (per digchip listing) | — |
| Designed For | Broadband commercial and industrial applications up to 1000 MHz | — |
| Frequency | — | 880 MHz (test), broadband up to 1000 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 66 V |
| Test Supply Voltage | — | 28 V |
| Test Quiescent Current | — | 1.4 A |
| Output Power (Avg) | — | 58 W (W-CDMA) |
| Power Gain | — | 21 dB at 880 MHz |
| العلبة | — | NI-880H-2L ceramic air-cavity |
| Lead Free Status | — | Lead Free (per datasheet) |
| Input Capacitance (Ciss) | — | 557.27 pF at 28 V |
| Operating Mode | — | Class AB, Class C, Doherty |
| Target Application | — | W-CDMA base-station final stage |