MRFE6S9135HR3 vs MRFE6S9200HR3 Perbandingan

Perbandingan bersamaan detil MRFE6S9135HR3 dari NXP Semiconductors dan MRFE6S9200HR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

NXP Semiconductors
MRFE6S9135HR3 MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L

MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L

MRFE6S9135HR3 ✓ Aktif
NXP Semiconductors
MRFE6S9200HR3 MRFE6S9200HR3 - 880MHz 58W RF Power LDMOS | NXP

MRFE6S9200HR3 - 880MHz 58W RF Power LDMOS | NXP

MRFE6S9200HR3 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum MRFE6S9135HR3 MRFE6S9200HR3
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) N-Channel LDMOS (RF Power)
Technology RF Power LDMOS Enhancement-mode LDMOS (HV6E)
Drain-Source Voltage (Rated) 66 V —
Typical Operating Voltage 28 V —
Output Power (Pout) 39 W (at 940 MHz, two-tone test) —
Power Gain (Gps) 21 dB (typical at 940 MHz) —
Drain Efficiency 63.3 % (typical at test conditions) —
Test Current 1 A —
Operating Frequency Range Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) —
Test Frequency 940 MHz —
Package Type NI-880H-2L (ceramic flange) —
Tipe Mounting Screw-mount / bolt-down flange Chassis / flange mount, SMD variant 5.08 mm height
ESD Protection (HBM) Class II (per JESD22-A114) —
ESD Protection (MM) Class A (per EIA/JESD22-A115) —
ESD Protection (CDM) Class IV (per JESD22-C101) —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Lead Status Lead-containing (per digchip listing) —
Designed For Broadband commercial and industrial applications up to 1000 MHz —
Frequency — 880 MHz (test), broadband up to 1000 MHz
Drain-Source Voltage (Vdss) Rated — 66 V
Test Supply Voltage — 28 V
Test Quiescent Current — 1.4 A
Output Power (Avg) — 58 W (W-CDMA)
Power Gain — 21 dB at 880 MHz
Paket — NI-880H-2L ceramic air-cavity
Lead Free Status — Lead Free (per datasheet)
Input Capacitance (Ciss) — 557.27 pF at 28 V
Operating Mode — Class AB, Class C, Doherty
Target Application — W-CDMA base-station final stage

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