MRFE6S9135HR3 vs MRFE6S9200HR3 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRFE6S9135HR3 tarafından NXP Semiconductors ve MRFE6S9200HR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRFE6S9135HR3 - 135W 900MHz RF Power LDMOS | NXP | NI-880H-2L
MRFE6S9135HR3 ✓ Aktif
Özellik Karşılaştırması
| Parametre | MRFE6S9135HR3 | MRFE6S9200HR3 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | N-Channel LDMOS (RF Power) |
| Technology | RF Power LDMOS | Enhancement-mode LDMOS (HV6E) |
| Drain-Source Voltage (Rated) | 66 V | — |
| Typical Operating Voltage | 28 V | — |
| Output Power (Pout) | 39 W (at 940 MHz, two-tone test) | — |
| Power Gain (Gps) | 21 dB (typical at 940 MHz) | — |
| Drain Efficiency | 63.3 % (typical at test conditions) | — |
| Test Current | 1 A | — |
| Operating Frequency Range | Up to 1000 MHz (broadband, 1 MHz to 1000 MHz typical) | — |
| Test Frequency | 940 MHz | — |
| Package Type | NI-880H-2L (ceramic flange) | — |
| Montaj Türü | Screw-mount / bolt-down flange | Chassis / flange mount, SMD variant 5.08 mm height |
| ESD Protection (HBM) | Class II (per JESD22-A114) | — |
| ESD Protection (MM) | Class A (per EIA/JESD22-A115) | — |
| ESD Protection (CDM) | Class IV (per JESD22-C101) | — |
| RoHS Durumu | [DATA_NEEDED: RoHS status] | Compliant |
| Lead Status | Lead-containing (per digchip listing) | — |
| Designed For | Broadband commercial and industrial applications up to 1000 MHz | — |
| Frequency | — | 880 MHz (test), broadband up to 1000 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 66 V |
| Test Supply Voltage | — | 28 V |
| Test Quiescent Current | — | 1.4 A |
| Output Power (Avg) | — | 58 W (W-CDMA) |
| Power Gain | — | 21 dB at 880 MHz |
| Paket | — | NI-880H-2L ceramic air-cavity |
| Lead Free Status | — | Lead Free (per datasheet) |
| Input Capacitance (Ciss) | — | 557.27 pF at 28 V |
| Operating Mode | — | Class AB, Class C, Doherty |
| Target Application | — | W-CDMA base-station final stage |