RTAX1000SL-1CGS624V vs RTAX1000S-1LG624V مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ RTAX1000SL-1CGS624V بواسطة Microchip Technology و RTAX1000S-1LG624V بواسطة Microchip Technology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Microchip Technology
RTAX1000SL-1CGS624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-1CGS624V ✓ نشطMicrochip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ نشطمقارنة المواصفات
| المعامل | RTAX1000SL-1CGS624V | RTAX1000S-1LG624V |
|---|---|---|
| العلامة التجارية | Microchip Technology | Microchip Technology |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | نشط | نشط |
| System Gates | 1,000,000 (1.00E6) | — |
| Logic Cells / Logic Blocks | 12096 | — |
| Logic Family | Digital CMOS | — |
| Programmable Technology | Antifuse (one-time programmable) | — |
| Package Type | CGA-624 (ceramic column grid array) | — |
| عدد الأطراف | 624 | — |
| درجة حرارة التشغيل | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Speed Grade | -1 (standard) | -1 |
| SEU Immunity | SEU-hardened registers; SEU rate < 10-10 errors/bit-day | — |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | — |
| Configuration | Live at power-up, single chip, no external boot PROM | Nonvolatile, live at power-up, single chip |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC |
| Clocking | Segmentable clock resources | — |
| Routing Features | Chip-wide highway routing, carry logic | — |
| نوع التركيب | Surface Mount | Surface Mount |
| حالة RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| جهد التغذية | [DATA_NEEDED: core/IO supply voltage] | — |
| Equivalent System Gates | — | 1000000 |
| Logic Cells | — | 18144 |
| CLBs | — | 12096 |
| Maximum User I/Os | — | 418 |
| Technology | — | CMOS antifuse (one-time programmable) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Combinatorial Delay (max) | — | 0.93 ns |
| العلبة | — | LG624 (624-ball ceramic column grid array) |
| Radiation Tolerance Class | — | Rad-tolerant (space flight) |
| Architecture Family | — | RTAX-S (based on Axcelerator) |
| Screening | — | [DATA_NEEDED: screening flow per order code suffix] |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |