RTAX1000SL-1CGS624V vs RTAX1000S-1LG624V तुलना
विस्तृत दोनों ओर की तुलना RTAX1000SL-1CGS624V द्वारा Microchip Technology और RTAX1000S-1LG624V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX1000SL-1CGS624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-1CGS624V ✓ सक्रियMicrochip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX1000SL-1CGS624V | RTAX1000S-1LG624V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| System Gates | 1,000,000 (1.00E6) | — |
| Logic Cells / Logic Blocks | 12096 | — |
| Logic Family | Digital CMOS | — |
| Programmable Technology | Antifuse (one-time programmable) | — |
| Package Type | CGA-624 (ceramic column grid array) | — |
| पिन काउंट | 624 | — |
| ऑपरेटिंग तापमान | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Speed Grade | -1 (standard) | -1 |
| SEU Immunity | SEU-hardened registers; SEU rate < 10-10 errors/bit-day | — |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | — |
| Configuration | Live at power-up, single chip, no external boot PROM | Nonvolatile, live at power-up, single chip |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC |
| Clocking | Segmentable clock resources | — |
| Routing Features | Chip-wide highway routing, carry logic | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| सप्लाई वोल्टेज | [DATA_NEEDED: core/IO supply voltage] | — |
| Equivalent System Gates | — | 1000000 |
| Logic Cells | — | 18144 |
| CLBs | — | 12096 |
| Maximum User I/Os | — | 418 |
| Technology | — | CMOS antifuse (one-time programmable) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Combinatorial Delay (max) | — | 0.93 ns |
| पैकेज | — | LG624 (624-ball ceramic column grid array) |
| Radiation Tolerance Class | — | Rad-tolerant (space flight) |
| Architecture Family | — | RTAX-S (based on Axcelerator) |
| Screening | — | [DATA_NEEDED: screening flow per order code suffix] |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |