H5CG46MEBDX015N - DDR5 16Gb 4800Mbps DRAM | SK Hynix
MPN: H5CG46MEBDX015N ✓ نشطH5CG46MEBDX015N نظرة عامة
DDR5 SDRAM (Double Data Rate 5 Synchronous Dynamic Random Access Memory) is the fifth generation of the DDR DRAM family used as main system memory. It sits within the memory hierarchy as a volatile storage component below CPU caches, succeeding DDR4 with higher bandwidth, lower per-pin power, and features such as on-die ECC, Decision Feedback Equalization (DFE), and an onboard PMIC architecture at the module level. DDR5 moves power management onto the memory module, improving signal integrity and supply noise.
Key features of the H5CG46MEBDX015N include its 16Gb density organized as 1G x 16, a 4800 Mbps (PC5-38400 class) data rate, DDR5 protocol operation, and a 0C to +85C commercial operating temperature range. The x16 organization suits applications needing 16-bit-wide memory channels, and DDR5 bank-group architecture improves effective bandwidth versus DDR4 at equal clock rates.
Architecturally, the device uses SK Hynix advanced DRAM process technology with DDR5 signal enhancements including on-die termination and training modes for high-speed operation. Internal banks and bank groups allow interleaved access that sustains high sequential and random bandwidth in computing platforms.
Typical applications include desktop and notebook DDR5 UDIMM/SODIMM modules, embedded computing modules, industrial controllers requiring high-bandwidth memory, and replacement sourcing for DDR5-based BOM lines in data storage and computing platforms.
A key design consideration is signal integrity at 4800 Mbps: DDR5 requires careful length matching, reference voltage management, and controller training. Designers should verify BIOS or controller compatibility lists before second-sourcing any DDR5 die.
This page synthesizes distributor inventory data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
بدائل مباشرة لـ H5CG46MEBDX015N — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع H5CG46MEBDX015N (نفس عامل الشكل والبصمة) — يختلف في Data Rate, Organization, Density, Package, Interface.
H5CG46MEBDX017N
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5CG48MEBDX014N
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5CG48MEBDX018N
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5CG46AGBDX015
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5CG46AGBDX017N
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5CG48AGBDX014N
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←H5CG48AGBDX018N
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها✗ غير متوفر
$87.42 / وحدة
عرض ورقة البيانات ←H5CG46MEBDX015N الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR5 SDRAM |
| Density | 16 Gb |
| التنظيم | 1G x 16 |
| معدل البيانات | 4800 Mbps |
| Technology Generation | DDR5 |
| درجة حرارة التشغيل | 0C to +85C |
| الوظيفة | DRAM (volatile memory) |
| Supply Voltage Class | DDR5 (1.1 V class) |
| نوع التركيب | Surface Mount |
| Applications | Computing modules, industrial controllers, data storage, embedded logging |
| Part Status | Active (per distributor listings) |
دليل تكوين أطراف H5CG46MEBDX015N standard
تكوين الأطراف لـ H5CG46MEBDX015N (حزمة standard). تتضمن هذه الدائرة المتكاملة الرقمية GPIO وواجهات الاتصال (UART وSPI وI2C) وأطراف الطاقة. راجع ورقة بيانات الشركة المصنعة لوظائف الأطراف البديلة وخيارات التكوين. ضرورية لتصميم الأنظمة المدمجة وتخطيط PCB.
لا تتوفر بيانات مفصلة لمخطط التوصيلات لـ H5CG46MEBDX015N.
راجع ورقة البيانات للحصول على تكوين الأطراف الكامل.
التطبيقات النموذجية
H5CG46MEBDX015N مناسب لـ 6 التطبيقs: Desktop and Notebook DDR5 Memory Modules, Embedded Computing Modules, Industrial Controllers, Data Storage Systems, Firmware Boot and Embedded Logging, Replacement Sourcing and BOM Continuity.
Desktop and Notebook DDR5 Memory Modules
The H5CG46MEBDX015N is a mainstream building block for PC DDR5 UDIMM and SODIMM modules, where its 1G x 16 organization and 4800 Mbps data rate match the DDR5-4800 class supported natively by current desktop CPUs and laptop SoCs. Eight or sixteen such dies populate standard non-binary and binary DDR5 module topologies, delivering 16 GB to 32 GB per module class capacities. At 4800 Mbps the die's DDR5 training features (write leveling, read training, DFE) let module vendors hit spec with standard PCB stackups. Its 0C to +85C commercial rating is fully adequate for consumer computing environments, and deep multi-source inventory makes it a low-risk BOM line for high-volume module production.
موصى به
Embedded Computing Modules
Embedded computing modules (COM Express, SMARC, and similar form factors) use DDR5 dies like the H5CG46MEBDX015N soldered directly on the module to provide 16Gb-class main memory beside the processor. The 1G x 16 organization suits compact 32-bit or 64-bit memory buses without needing x8 die proliferation, and the 4800 Mbps rate supplies bandwidth headroom for graphics-heavy HMI and edge-analytics workloads. DDR5's lower operating voltage class reduces module power versus an equivalent DDR4 design, easing thermal constraints in fanless enclosures. Designers must ensure their SoC's memory reference code is trained for this SK Hynix die revision and re-validate when second-sourcing to AGB-revision alternatives.
موصى به
Industrial Controllers
Industrial controllers handling large cyclic buffers, machine-vision pre-processing, or protocol aggregation benefit from the H5CG46MEBDX015N's 16Gb density and 4800 Mbps bandwidth, which together sustain the high random and sequential throughput these workloads demand. GlobalSpec's product overview explicitly targets industrial controllers for the H5CG46MEBD family. The main design constraint is thermal: the 0C to +85C operating range requires the controller enclosure to keep die temperature within limits under worst-case memory traffic, typically verified with a thermal camera under stress test. For factory-floor deployments with controlled ambient temperature, this die provides reliable high-bandwidth memory with strong multi-source supply continuity.
موصى به
Data Storage Systems
Storage controllers, SSD DRAM caches, and NAS platforms use DDR5-class DRAM as metadata cache and write buffers, where the H5CG46MEBDX015N's 16Gb per die allows dense buffering with fewer components on the board. At 4800 Mbps, a 64-bit controller interface built from x16 dies sustains multi-GB/s cache bandwidth adequate for NVMe-class front ends. DDR5's on-die error management improves data-path robustness for metadata that lives in DRAM between flushes. Designers should budget refresh overhead at the die level and confirm the storage controller's DDR5 reference code supports SK Hynix speed-bin tables, since cache-hit latency is sensitive to training quality across the full temperature range.
موصى به
Firmware Boot and Embedded Logging
Platforms that execute firmware from DRAM after boot, or that log high-rate telemetry into a memory ring buffer, leverage the H5CG46MEBDX015N's 16Gb capacity to hold both code images and logging history concurrently. The 1G x 16 organization simplifies 16-bit-wide boot buses on cost-sensitive boards, while 4800 Mbps operation keeps early-boot copy-down times short. Because logging workloads often run continuously, designers should monitor die self-heating and set controller refresh policies conservatively within the 0C to +85C window. GlobalSpec identifies firmware boot and embedded logging as core use cases for this family, and the broad distributor stock makes it easy to qualify and sustain supply.
موصى به
Replacement Sourcing and BOM Continuity
For procurement teams maintaining legacy DDR5-based platforms, the H5CG46MEBDX015N and its same-family variants (H5CG46MEBDX017N, H5CG48MEBDX014N, H5CG48MEBDX018N, and AGB-revision parts) form a drop-in ecosystem that keeps production lines running through allocation cycles. Because these dies share package footprint and organization, a substitution requires re-running memory training validation rather than a PCB respin, dramatically reducing replacement cost and lead time versus redesign. Inventory visibility across icDirectory (300 pcs), Octopart Canada (28,760 pcs), and Wolfchip (40,260 pcs) as of early September 2026 confirms a liquid market with multiple qualified sources for continuity planning.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ H5CG46MEBDX015N — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | H5CG46MEBDX017N | H5CG48MEBDX014N | H5CG48MEBDX018N | H5CG46AGBDX015 |
|---|---|---|---|---|---|
| Package | FBGA (DDR5 die package) | FBGA - same family | FBGA - same family | FBGA - same family | FBGA - same family (AGB die) |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 |
| Data Rate | 4800 Mbps | 4800 Mbps class | 5600 Mbps class | 5600 Mbps class | 4800 Mbps |
| Technology | DDR5 | DDR5 | DDR5 | DDR5 | DDR5 |
| Die Revision | MEBD | MEBD | MEBD | MEBD | AGB |
أبرز الفروقات
- DDR5-4800 mainstream speed grade (مقابلH5CG48MEBDX018N)
- MEBD die revision with proven module track record (مقابلH5CG46AGBDX015)
- x16 organization simplifies wide buses (مقابلx8 DDR5 die alternatives)
ملاحظات التصميم
At 4800 Mbps, DDR5 signal integrity dominates design success. Maintain controlled-impedance routing (typically 40 ohm single-ended per platform guideline), match trace lengths within the controller spec, and follow the CPU vendor's DDR5 routing guide for fly-by or topology requirements. Enable the die's on-die termination and DFE training features during bring-up; skip training steps and marginal timing will surface as intermittent failures at temperature extremes within the 0C to +85C window.
Never assume speed-grade interchangeability within the H5CG family. The MEBD 48-prefix parts (e.g., H5CG48MEBDX018N) target faster DDR5-5600 class operation, while the target part is DDR5-4800. A faster part usually drops into a 4800 design, but a slower-grade substitution into a 5600 design will fail training. Always re-run full memory training and a temperature sweep after any die swap, and confirm the die revision (MEBD vs AGB) is approved in your platform's qualified vendor list.
Decouple the DRAM supply per the platform reference design with a distributed network of ceramic capacitors near each die, and keep VDD/VDDQ planes solid with minimal split crossings under address/command lines. DDR5 moves power management off the die for module designs (PMIC at module level), so verify the on-module regulator sequencing meets the DDR5 power-up order before first power-on. Estimated: die power scales with both frequency and VDD squared, so 4800 Mbps operation at the DDR5 1.1 V class runs noticeably cooler than the same bandwidth in DDR4.
معلومات الامتثال
Compliance data not present in provided web data; commercial-grade (0C to +85C) DRAM, so AEC-Q100 is not applicable.
